CN100343919C - 高速磁存储器的体系结构 - Google Patents

高速磁存储器的体系结构 Download PDF

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Publication number
CN100343919C
CN100343919C CNB2003101185986A CN200310118598A CN100343919C CN 100343919 C CN100343919 C CN 100343919C CN B2003101185986 A CNB2003101185986 A CN B2003101185986A CN 200310118598 A CN200310118598 A CN 200310118598A CN 100343919 C CN100343919 C CN 100343919C
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CN
China
Prior art keywords
switches
programming
circuit
current
sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2003101185986A
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English (en)
Chinese (zh)
Other versions
CN1534676A (zh
Inventor
D·戈格尔
W·R·勒尔
R·E·朔伊尔莱因
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Infineon Technologies North America Corp
Original Assignee
International Business Machines Corp
Infineon Technologies North America Corp
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Publication date
Application filed by International Business Machines Corp, Infineon Technologies North America Corp filed Critical International Business Machines Corp
Publication of CN1534676A publication Critical patent/CN1534676A/zh
Application granted granted Critical
Publication of CN100343919C publication Critical patent/CN100343919C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
CNB2003101185986A 2002-12-13 2003-12-12 高速磁存储器的体系结构 Expired - Lifetime CN100343919C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/318,709 2002-12-13
US10/318,709 US6778431B2 (en) 2002-12-13 2002-12-13 Architecture for high-speed magnetic memories

Publications (2)

Publication Number Publication Date
CN1534676A CN1534676A (zh) 2004-10-06
CN100343919C true CN100343919C (zh) 2007-10-17

Family

ID=32506442

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101185986A Expired - Lifetime CN100343919C (zh) 2002-12-13 2003-12-12 高速磁存储器的体系结构

Country Status (8)

Country Link
US (1) US6778431B2 (enExample)
EP (1) EP1570487B1 (enExample)
JP (1) JP2006510145A (enExample)
CN (1) CN100343919C (enExample)
AU (1) AU2003293828A1 (enExample)
DE (1) DE60320301T2 (enExample)
TW (1) TWI243379B (enExample)
WO (1) WO2004055821A2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6886119B2 (en) * 2002-09-04 2005-04-26 Agere Systems Inc. Method and apparatus for improved integrated circuit memory testing
CA2749971C (en) * 2009-02-20 2013-04-16 John Lynch Memory architecture with a current controller and reduced power requirements
US9183912B2 (en) 2012-05-17 2015-11-10 Everspin Technologies, Inc. Circuit and method for controlling MRAM cell bias voltages
WO2016053296A1 (en) 2014-09-30 2016-04-07 Hewlett Packard Enterprise Development Lp Crosspoint array decoder
US9721628B1 (en) * 2016-09-15 2017-08-01 Globalfoundries Inc. Address based memory data path programming scheme
JP2019046514A (ja) 2017-08-29 2019-03-22 東芝メモリ株式会社 半導体記憶装置
US10199095B1 (en) * 2017-09-01 2019-02-05 Globalfoundries Inc. Bit line strapping scheme for high density SRAM
US10290327B2 (en) * 2017-10-13 2019-05-14 Nantero, Inc. Devices and methods for accessing resistive change elements in resistive change element arrays
US10998074B2 (en) * 2019-07-22 2021-05-04 Micron Technology, Inc. Wordline capacitance balancing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1095864A (zh) * 1993-05-24 1994-11-30 松下电子工业株式会社 电可擦可编程只读存储器,有其之存储器件和集成电路板
JPH09306159A (ja) * 1996-05-14 1997-11-28 Nippon Telegr & Teleph Corp <Ntt> 逐次読出しメモリ
US6236611B1 (en) * 1999-12-20 2001-05-22 Motorola, Inc. Peak program current reduction apparatus and method
CN1371101A (zh) * 2001-02-22 2002-09-25 三星电子株式会社 用于编程非易失性存储器的位线设置和放电电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056159A (ja) * 1991-06-28 1993-01-14 Toshiba Corp デイスプレイ装置
US6269040B1 (en) * 2000-06-26 2001-07-31 International Business Machines Corporation Interconnection network for connecting memory cells to sense amplifiers
US6515896B1 (en) * 2001-07-24 2003-02-04 Hewlett-Packard Company Memory device with short read time

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1095864A (zh) * 1993-05-24 1994-11-30 松下电子工业株式会社 电可擦可编程只读存储器,有其之存储器件和集成电路板
JPH09306159A (ja) * 1996-05-14 1997-11-28 Nippon Telegr & Teleph Corp <Ntt> 逐次読出しメモリ
US6236611B1 (en) * 1999-12-20 2001-05-22 Motorola, Inc. Peak program current reduction apparatus and method
CN1371101A (zh) * 2001-02-22 2002-09-25 三星电子株式会社 用于编程非易失性存储器的位线设置和放电电路

Also Published As

Publication number Publication date
US6778431B2 (en) 2004-08-17
US20040114439A1 (en) 2004-06-17
WO2004055821A2 (en) 2004-07-01
DE60320301T2 (de) 2009-06-25
WO2004055821A3 (en) 2004-11-04
JP2006510145A (ja) 2006-03-23
AU2003293828A8 (en) 2004-07-09
TW200426824A (en) 2004-12-01
TWI243379B (en) 2005-11-11
CN1534676A (zh) 2004-10-06
DE60320301D1 (enExample) 2008-05-21
EP1570487A2 (en) 2005-09-07
EP1570487B1 (en) 2008-04-09
AU2003293828A1 (en) 2004-07-09

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Granted publication date: 20071017