CN100342542C - 固态摄像元件及其制造方法 - Google Patents

固态摄像元件及其制造方法 Download PDF

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Publication number
CN100342542C
CN100342542C CNB031068219A CN03106821A CN100342542C CN 100342542 C CN100342542 C CN 100342542C CN B031068219 A CNB031068219 A CN B031068219A CN 03106821 A CN03106821 A CN 03106821A CN 100342542 C CN100342542 C CN 100342542C
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China
Prior art keywords
dielectric film
insulating film
power supply
film
isolation
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Expired - Fee Related
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CNB031068219A
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English (en)
Chinese (zh)
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CN1444287A (zh
Inventor
小西稔
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication of CN1444287A publication Critical patent/CN1444287A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNB031068219A 2002-03-08 2003-03-04 固态摄像元件及其制造方法 Expired - Fee Related CN100342542C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002063611A JP2003264284A (ja) 2002-03-08 2002-03-08 固体撮像素子及びその製造方法
JP2002063611 2002-03-08

Publications (2)

Publication Number Publication Date
CN1444287A CN1444287A (zh) 2003-09-24
CN100342542C true CN100342542C (zh) 2007-10-10

Family

ID=27784930

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031068219A Expired - Fee Related CN100342542C (zh) 2002-03-08 2003-03-04 固态摄像元件及其制造方法

Country Status (5)

Country Link
US (2) US6936873B2 (https=)
JP (1) JP2003264284A (https=)
KR (1) KR100500064B1 (https=)
CN (1) CN100342542C (https=)
TW (1) TWI221029B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319784A (ja) * 2003-04-16 2004-11-11 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2005057137A (ja) * 2003-08-06 2005-03-03 Sanyo Electric Co Ltd 固体撮像装置の製造方法
KR100578644B1 (ko) * 2004-05-06 2006-05-11 매그나칩 반도체 유한회사 프리즘을 구비한 시모스 이미지센서 및 그 제조방법
JP2006344644A (ja) * 2005-06-07 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置およびカメラならびに固体撮像装置の製造方法
US20060289777A1 (en) * 2005-06-29 2006-12-28 Wen Li Detector with electrically isolated pixels
JP5061579B2 (ja) * 2006-11-02 2012-10-31 凸版印刷株式会社 固体撮像装置及びその製造方法
JP2009076746A (ja) * 2007-09-21 2009-04-09 Fujifilm Corp 固体撮像素子、撮像装置、及び固体撮像素子の製造方法
JP2010206009A (ja) * 2009-03-04 2010-09-16 Toshiba Corp 撮像装置及びその製造方法、並びに撮像方法
KR101106980B1 (ko) * 2009-03-19 2012-01-20 안동준 레일 바이크
WO2012063436A1 (ja) * 2010-11-10 2012-05-18 シャープ株式会社 表示装置用基板及びその製造方法、表示装置
KR101038445B1 (ko) * 2011-01-24 2011-06-01 (주) 한국 레드벤쳐 레저용 레일 바이크
US10553479B2 (en) 2017-02-16 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with contact pad and fabrication method therefore

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323052A (en) * 1991-11-15 1994-06-21 Sharp Kabushiki Kaisha Image pickup device with wide angular response
JPH06326284A (ja) * 1993-05-12 1994-11-25 Matsushita Electron Corp カラー固体撮像装置
JPH07106538A (ja) * 1993-09-30 1995-04-21 Olympus Optical Co Ltd 固体撮像装置の製造方法
US5479049A (en) * 1993-02-01 1995-12-26 Sharp Kabushiki Kaisha Solid state image sensor provided with a transparent resin layer having water repellency and oil repellency and flattening a surface thereof
CN1134040A (zh) * 1995-05-22 1996-10-23 松下电子工业株式会社 固态成像器件及其制造方法
US5593913A (en) * 1993-09-28 1997-01-14 Sharp Kabushiki Kaisha Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization
JPH0927608A (ja) * 1995-05-11 1997-01-28 Sony Corp 固体撮像装置とその製造方法
CN1196580A (zh) * 1997-04-09 1998-10-21 日本电气株式会社 改进的固态图像传感元件,其制造方法和含其的传感器件
JP2000091548A (ja) * 1998-09-08 2000-03-31 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
US6066511A (en) * 1995-08-23 2000-05-23 Sony Corporation Manufacturing method for a solid state imaging device
JP2001044401A (ja) * 1999-07-28 2001-02-16 Nec Corp 固体撮像素子およびその製造方法

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Publication number Priority date Publication date Assignee Title
JPH0637297A (ja) * 1992-07-16 1994-02-10 Nec Corp 固体撮像装置およびその駆動方法
JPH0763904A (ja) * 1993-08-25 1995-03-10 Asahi Glass Co Ltd 複合球面マイクロレンズアレイ及びその製造方法
JP3566331B2 (ja) * 1994-03-11 2004-09-15 リコー光学株式会社 光学デバイス・光学デバイス製造方法
JPH10270672A (ja) * 1997-03-25 1998-10-09 Sony Corp 固体撮像素子
JP2000124435A (ja) * 1998-10-19 2000-04-28 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2000196060A (ja) * 1998-12-24 2000-07-14 Nec Corp 固体撮像装置およびその製造方法
JP2000206310A (ja) * 1999-01-19 2000-07-28 Matsushita Electric Ind Co Ltd レンズアレイ
US6583438B1 (en) * 1999-04-12 2003-06-24 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
JP4318007B2 (ja) * 1999-10-07 2009-08-19 富士フイルム株式会社 固体撮像素子
US6171885B1 (en) * 1999-10-12 2001-01-09 Taiwan Semiconductor Manufacturing Company High efficiency color filter process for semiconductor array imaging devices
TW494574B (en) * 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
US6221687B1 (en) * 1999-12-23 2001-04-24 Tower Semiconductor Ltd. Color image sensor with embedded microlens array
JP2001189443A (ja) * 1999-12-28 2001-07-10 Sony Corp 固体撮像素子及びその製造方法
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
JP2002006113A (ja) * 2000-06-27 2002-01-09 Seiko Epson Corp マイクロレンズ用基板の製造方法、マイクロレンズ用基板、マイクロレンズ基板、電気光学装置、液晶パネル用対向基板、液晶パネル、および投射型表示装置
US6448596B1 (en) * 2000-08-15 2002-09-10 Innotech Corporation Solid-state imaging device
JP2003249634A (ja) * 2002-02-25 2003-09-05 Sony Corp 固体撮像素子およびその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323052A (en) * 1991-11-15 1994-06-21 Sharp Kabushiki Kaisha Image pickup device with wide angular response
US5479049A (en) * 1993-02-01 1995-12-26 Sharp Kabushiki Kaisha Solid state image sensor provided with a transparent resin layer having water repellency and oil repellency and flattening a surface thereof
JPH06326284A (ja) * 1993-05-12 1994-11-25 Matsushita Electron Corp カラー固体撮像装置
US5593913A (en) * 1993-09-28 1997-01-14 Sharp Kabushiki Kaisha Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization
JPH07106538A (ja) * 1993-09-30 1995-04-21 Olympus Optical Co Ltd 固体撮像装置の製造方法
JPH0927608A (ja) * 1995-05-11 1997-01-28 Sony Corp 固体撮像装置とその製造方法
CN1134040A (zh) * 1995-05-22 1996-10-23 松下电子工业株式会社 固态成像器件及其制造方法
US6066511A (en) * 1995-08-23 2000-05-23 Sony Corporation Manufacturing method for a solid state imaging device
CN1196580A (zh) * 1997-04-09 1998-10-21 日本电气株式会社 改进的固态图像传感元件,其制造方法和含其的传感器件
JP2000091548A (ja) * 1998-09-08 2000-03-31 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2001044401A (ja) * 1999-07-28 2001-02-16 Nec Corp 固体撮像素子およびその製造方法

Also Published As

Publication number Publication date
JP2003264284A (ja) 2003-09-19
US20050110052A1 (en) 2005-05-26
KR100500064B1 (ko) 2005-07-12
KR20030082360A (ko) 2003-10-22
CN1444287A (zh) 2003-09-24
US6936873B2 (en) 2005-08-30
US20030168678A1 (en) 2003-09-11
TW200304215A (en) 2003-09-16
TWI221029B (en) 2004-09-11

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Granted publication date: 20071010