CN100341143C - Semiconductor device miniature radiator - Google Patents
Semiconductor device miniature radiator Download PDFInfo
- Publication number
- CN100341143C CN100341143C CNB2005100284413A CN200510028441A CN100341143C CN 100341143 C CN100341143 C CN 100341143C CN B2005100284413 A CNB2005100284413 A CN B2005100284413A CN 200510028441 A CN200510028441 A CN 200510028441A CN 100341143 C CN100341143 C CN 100341143C
- Authority
- CN
- China
- Prior art keywords
- layer
- metal level
- radiator
- alloy
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a miniature radiator for semiconductor devices, which belongs to the microelectronic technical field of semiconductors and is composed of one or more than one metallic layers, wherein the metallic layer comprises a monometallic layer or an alloy layer; the monometal is one of Cu, Ni, Co, Fe, Sn, Cr, Al, Ag, Au, Pd and Pt, and the alloy is composed of any two or more than two of Cu, Ni, Co, Fe, Sn, Cr, Al, Ag, Au, Pd and Pt; at least one of the metallic layer or the alloy layer forms a micro nanometer acicular crystal embattling structure; if the number of the metallic layer is more than one, the metallic layers are combined by metallic bond. The present invention has the advantages of simple structure, small size, good radiation effect, low manufacture cost and easy manufacture by using simple chemical, electrochemical or physical deposit method, is directly attached to the object to be radiated, and has the radiation effect which is far higher than that of a copper flat plate radiating fin which is usually pasted at the back of a chip after measure.
Description
Technical field
What the present invention relates to is the device in a kind of semiconductor microelectronic technology field, specifically, is a kind of semiconductor device miniature radiator.
Background technology
With the chip is the semiconductor microactuator electronic device of representative, along with improving constantly of integrated level and progressively dwindling of volume, make to take originally and reduce than the physical dimension of the electronic equipment of large space form with the order of magnitude, but the trend that volume heating heat flux increases is swift and violent unusually, and the heat flux of the current required cooling of very lagre scale integrated circuit (VLSIC) (ULSI) has reached the magnitude of the stove heart heat flux of light-water stove reactor.With regard to computer realm, at present the caloric value of CPU is brought up to 70～80W by several years ago tens watts, and the density of heat flow rate that sees through the radiator base plate conduction is up to 10
4～10
5W/m
2This is for the higher microelectronic component and micro-system of heat load susceptibility, and the accumulation of heat at the chip place will cause device and system temperature to raise rapidly, has a strong impact on the stable of the operating state of electronic device and system.The operating temperature range of microelectronic component generally is-5～65 ℃, in case exceed its high limit of tolerance temperature, then will burn out some key positions, makes the whole system collapse.And the temperature of single semiconductor element raises 10 ℃, and the reliability of system reduces by 50%.But the traditional heat-dissipating mode according to existing radiator wants to meet the demands, and radiator can only be done bigger and bigger.Semiconductor microactuator electronic devices such as this and chip are progressively completely contradicted to the trend of small light development, if do not solve, the overall dimension of electronic device still can not dwindle in fact.Therefore, traditional bulky forced convertion radiating mode has been subjected to great challenge, and heat dissipation problem becomes the bottleneck that microelectronic element is used.How in limited short space, the development volume is small, and little radiator that radiating efficiency is high is that the semiconductor microactuator electronics industry continues the key technology of high speed development from now on.
Find by prior art documents, Dong Tao etc. are in " the electronic chip cooling heat exchange property analysis of microchannel radiator " (" electronic letters, vol ", 2003.31 (5), 737-741) mention in the literary composition, this radiator is a kind of miniature cooling system that is processed to form little jet flow, little spraying or micro heat pipe cooling by LIGA (a kind of little manufacture method of grenz ray deep layer photoetching electrotyping process) technology.But the required process equipment costliness of this kind minitype radiator, technology are very complicated, and cost of manufacture is difficult to accept, and practical application is greatly limited.
Summary of the invention
The objective of the invention is to overcome the deficiency that prior art exists, a kind of semiconductor device miniature radiator is provided, it can be attached directly to by the surface of radiator or device, organically with radiator with combined together by radiator, thereby its radiating efficiency is significantly improved.
The present invention is achieved by the following technical solutions, the present invention is made of one or more layers of metal level, described metal level comprises single metal layer or alloy-layer, described monometallic is a kind of among Cu, Ni, Co, Fe, Sn, Cr, Al, Ag, Au, Pd, the Pt, described alloy is made of above-mentioned two or more monometallic arbitrarily, it is micro-nano needle crystal array structure that described single metal layer or alloy-layer have one deck at least, if the above metal level of one deck, then metallic bond combination between the metal level.
Described micro-nano needle crystal array structure is meant the brilliant oldered array of the vertical needle-like that has micro-nano-scale in the metal surface.
Described needle-like crystalline substance, it highly is the 0.05-50 micron, base diameter is the 0.05-30 micron, in this scope, all can produce better heat radiating effect.
The present invention adopts directly the miniature radiator structure that forms the metal needle crystal array of micro-nano-scale on by radiator mainly to be based on it to have following special radiating effect: at first, it is long-pending that this special metal needle-like array structure has great microcosmic surface, can increase heat exchange area, improve radiating efficiency.Secondly, high density needle crystal array structure under micro-nano-scale, its character is compared with the cardinal principle block of material very big variation has been taken place, it has not had metallic luster, a similar perfect blackbody, have very strong light radiation ability, heat can be finished by the radiation of the far red light that forms, and does not need other forced heat radiation system.In addition, this metal micro-nano needle crystal array structure can directly form on by radiator, both can reduce the size of radiator, has shortened heat transfer distances again, avoids bad by the heat radiation that does not freely cause because of conducting heat between radiator and radiator.
Why the present invention not only is confined to use monolayer constructions will; be to have considered some concrete applicable cases; lower as working as metal micro-nano needle crystal array structure hardness and intensity; easy hurt; or oxidation easily takes place and when influencing radiating effect in the surface; at its coating surface one deck noble metal, or high rigidity chromium, can play a protective role.Ought run into for another example by the bond strength of radiator and metal needle crystal array structure under the situation such as the lower or easy counterdiffusion mutually of intermetallic, but between is introduced intermediate layer and is addressed the above problem.
Why the present invention selects highly to be that 0.05-50 micron, base diameter are that the needle crystal array structure of 0.05-30 micron is because in this scope, light radiation ability, comprehensive radiating effect the best such as specific area.
Compare with existing radiators such as microchannel radiators, the invention has the advantages that: this heat spreader structures is simple, volume is little, good heat dissipation effect, obtain easily by better simply chemistry, electrochemistry or physical deposition method, and directly apposition on by radiator, and low cost of manufacture makes applied range.The radiating effect of this radiator is higher than the copper plate radiating plate that is pasted on chip back usually far away after measured.
Embodiment
Embodiment 1
The present invention is made of one deck single metal layer, and single metal layer is the Cu metal level, and described Cu metal level is a micro-nano needle crystal array structure.
Described needle-like crystalline substance, its height: the 0.05-0.4 micron, base diameter: the 0.05-0.2 micron, the radiating effect of this radiator is higher than the copper plate radiating plate that is pasted on chip back usually after measured.
Embodiment 2
The present invention is made of two-layer monometallic, and the bottom is the Cu metal level, is the Ni metal level on the Cu metal level, is the metallic bond combination between two metal levels, and described Ni metal level is a micro-nano needle crystal array structure.
Described needle-like crystalline substance, its height: the 0.05-0.4 micron, base diameter: the 0.05-0.2 micron, the radiating effect of this radiator is higher than the copper plate radiating plate that is pasted on chip back usually after measured.
Embodiment 3
The present invention is made of two-layer monometallic, and the bottom is the Ni metal level, is the Au metal level on the Ni metal level, is the metallic bond combination between two metal levels, and described Ni metal level is a micro-nano needle crystal array structure.
Described needle-like crystalline substance, its height 0.4-0.8 micron, base diameter is the 0.1-0.3 micron, the radiating effect of this radiator is higher than the copper plate radiating plate that is pasted on chip back usually far away after measured.
Embodiment 4
The present invention is made of two-layer monometallic, and the bottom is the Cu metal level, is the Ag metal level on the Cu metal level, is the metallic bond combination between two metal levels, and described Cu metal level is a micro-nano needle crystal array structure.
Described needle-like crystalline substance, its height 2-7 micron, base diameter is the 0.8-2 micron, the radiating effect of this radiator is higher than the copper plate radiating plate that is pasted on chip back usually far away after measured.
Embodiment 5
The present invention is made of two-layer monometallic, and the bottom is the Ni metal level, is the Al metal level on the Ni metal level, is the metallic bond combination between two metal levels, and described Ni metal level is a micro-nano needle crystal array structure.
Described needle-like crystalline substance, its height 10-14 micron, base diameter is the 2-7 micron, the radiating effect of this radiator is higher than the copper plate radiating plate that is pasted on chip back usually far away after measured.
Embodiment 6
The present invention is made of one deck alloy and one deck monometallic, and the bottom is the Ni-Co alloy-layer, is the Au metal level on the Ni-Co alloy-layer, is the metallic bond combination between two metal levels, and described Ni-Co metal level is a micro-nano needle crystal array structure.
Described needle-like crystalline substance, its height 20-27 micron, base diameter is the 5-10 micron, the radiating effect of this radiator is higher than the copper plate radiating plate that is pasted on chip back usually far away after measured.
Embodiment 7
The present invention is made of two-layer alloy, and the bottom is the Ni-Co alloy-layer, is the Au-Ag alloy-layer on the Ni-Co alloy-layer, is the metallic bond combination between two metal levels, and described Ni-Co metal level is a micro-nano needle crystal array structure.
Described needle-like crystalline substance, its height 30-40 micron, base diameter is the 9-17 micron, the radiating effect of this radiator is higher than the copper plate radiating plate that is pasted on chip back usually far away after measured.
Embodiment 8
The present invention is made of three layers of monometallic, and the bottom is the Ni metal level, is the Pd metal level on the Ni metal level, is the Au metal level on the Pd metal level, is the metallic bond combination between the adjacent two layers metal level, and described Pd metal level is a micro-nano needle crystal array structure.
Described needle-like crystalline substance, its height 35-50 micron, base diameter is the 18-30 micron, the radiating effect of this radiator is higher than the copper plate radiating plate that is pasted on chip back usually far away after measured.
Claims (4)
1. semiconductor device miniature radiator, constitute by one or more layers of metal level, it is characterized in that, described metal level comprises single metal layer or alloy-layer, described monometallic is a kind of among Cu, Ni, Co, Fe, Sn, Cr, Al, Ag, Au, Pd, the Pt, described alloy is made of above-mentioned two or more monometallic arbitrarily, it is micro-nano needle crystal array structure that described single metal layer or alloy-layer have one deck at least, if the above metal level of one deck, then metallic bond combination between the metal level.
2. semiconductor device miniature radiator according to claim 1 is characterized in that, described micro-nano needle crystal array structure is meant the brilliant oldered array of the vertical needle-like that has micro-nano-scale in the metal surface.
3. semiconductor device miniature radiator according to claim 2 is characterized in that, described needle-like crystalline substance, and it highly is the 0.05-50 micron.
4. semiconductor device miniature radiator according to claim 2 is characterized in that, described needle-like crystalline substance, its base diameter are the 0.05-30 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100284413A CN100341143C (en) | 2005-08-04 | 2005-08-04 | Semiconductor device miniature radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100284413A CN100341143C (en) | 2005-08-04 | 2005-08-04 | Semiconductor device miniature radiator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1731578A CN1731578A (en) | 2006-02-08 |
| CN100341143C true CN100341143C (en) | 2007-10-03 |
Family
ID=35963907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100284413A Expired - Fee Related CN100341143C (en) | 2005-08-04 | 2005-08-04 | Semiconductor device miniature radiator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100341143C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101792918A (en) * | 2010-04-09 | 2010-08-04 | 上海交通大学 | Preparation method of surface Co-based micro-nano needle crystal array structure |
| JP5485110B2 (en) * | 2010-10-29 | 2014-05-07 | 新光電気工業株式会社 | WIRING BOARD, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE |
| CN103147102B (en) * | 2013-02-20 | 2016-07-06 | 上海交通大学 | A kind of pin cone micro-nano twin-stage array structure materials and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1076876C (en) * | 1994-02-04 | 2001-12-26 | 亚瑞亚·勃朗勃威力有限公司 | Semiconductor unit which can be cut off |
| JP2002164482A (en) * | 2000-11-27 | 2002-06-07 | Mitsubishi Electric Corp | Semiconductor device |
-
2005
- 2005-08-04 CN CNB2005100284413A patent/CN100341143C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1076876C (en) * | 1994-02-04 | 2001-12-26 | 亚瑞亚·勃朗勃威力有限公司 | Semiconductor unit which can be cut off |
| JP2002164482A (en) * | 2000-11-27 | 2002-06-07 | Mitsubishi Electric Corp | Semiconductor device |
Non-Patent Citations (1)
| Title |
|---|
| 功率半导体器件芯片背面多层金属层技术 贾松良，半导体技术，第4期 1990 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1731578A (en) | 2006-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100592541C (en) | Thermoelectric nano-wire devices | |
| EP1592059A2 (en) | Heat sink and method for processing surfaces thereof | |
| TW200913105A (en) | Connecting and bonding adjacent layers with nanostructures | |
| CN1343007A (en) | Semiconductor device, manufacturing method, thereof, circuit base plate and electronic equipment | |
| JP2006240955A (en) | Ceramic substrate, ceramic circuit board, and power control component using the same | |
| WO2005124882A1 (en) | Thermoelectric conversion module | |
| US20060137862A1 (en) | Heat dissipating device with metal foam | |
| TW200411038A (en) | Thermal interface material | |
| EP1372368B1 (en) | Radiating fin and radiating method using the radiating fin | |
| CN100341143C (en) | Semiconductor device miniature radiator | |
| Yoon et al. | Reliable and repeatable bonding technology for high temperature automotive power modules for electrified vehicles | |
| TW200822321A (en) | Thermal management device for a memory module | |
| EP3624183A1 (en) | Insulating sheet and laminate | |
| TW201117683A (en) | A LED array board | |
| CN201149866Y (en) | Ceramic/metallic complex structure | |
| WO2021120429A1 (en) | Back plate and display panel | |
| CN206349353U (en) | Heat-conduction component | |
| JPWO2005015112A1 (en) | Heat dissipation member, and apparatus, casing, computer support, and heat dissipation member manufacturing method using the heat dissipation member | |
| US20130333216A1 (en) | Method for manufacturing heat dissipation device | |
| CN101826493A (en) | Heat radiating package substrate and fabricating method the same | |
| CN107068633A (en) | Heat-conduction component | |
| JP2001108773A (en) | Heat sink and manufacturing method thereof | |
| CN213583743U (en) | Insulating substrate with direct water cooling | |
| CN2694491Y (en) | Heat radiator and heat radiation module | |
| CN205987655U (en) | Combined heat radiator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071003 Termination date: 20130804 |