CN100340007C - 氮化物半导体发光器件及其制造方法 - Google Patents
氮化物半导体发光器件及其制造方法 Download PDFInfo
- Publication number
- CN100340007C CN100340007C CNB2004100385886A CN200410038588A CN100340007C CN 100340007 C CN100340007 C CN 100340007C CN B2004100385886 A CNB2004100385886 A CN B2004100385886A CN 200410038588 A CN200410038588 A CN 200410038588A CN 100340007 C CN100340007 C CN 100340007C
- Authority
- CN
- China
- Prior art keywords
- nitride semiconductor
- type
- concentration
- dopant
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000002019 doping agent Substances 0.000 claims abstract description 95
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000005468 ion implantation Methods 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 24
- 238000005516 engineering process Methods 0.000 claims description 24
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 238000004151 rapid thermal annealing Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR70609/2003 | 2003-10-10 | ||
KR1020030070609A KR20050035325A (ko) | 2003-10-10 | 2003-10-10 | 질화물 반도체 발광소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1606176A CN1606176A (zh) | 2005-04-13 |
CN100340007C true CN100340007C (zh) | 2007-09-26 |
Family
ID=34420599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100385886A Expired - Lifetime CN100340007C (zh) | 2003-10-10 | 2004-05-08 | 氮化物半导体发光器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7012284B2 (zh) |
JP (1) | JP2005117005A (zh) |
KR (1) | KR20050035325A (zh) |
CN (1) | CN100340007C (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080135868A1 (en) * | 2004-10-01 | 2008-06-12 | Mitsubishi Cable Industries, Ltd. | Nitride Semiconductor Light Emitting Element and Method for Manufacturing the Same |
KR100631898B1 (ko) * | 2005-01-19 | 2006-10-11 | 삼성전기주식회사 | Esd보호 능력을 갖는 질화갈륨계 발광 소자 및 그 제조방법 |
KR100675220B1 (ko) * | 2005-05-18 | 2007-01-29 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
KR100760075B1 (ko) * | 2006-01-26 | 2007-09-18 | 엘지전자 주식회사 | 발광 소자 패키지 및 그의 제조 방법 |
KR100999787B1 (ko) | 2009-12-29 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
CN102468377A (zh) * | 2010-11-23 | 2012-05-23 | 孙智江 | 一种提高电流扩展效应的led制作方法 |
KR101219290B1 (ko) * | 2011-11-08 | 2013-01-21 | 순천대학교 산학협력단 | 발광 다이오드 제조방법 |
CN114242862B (zh) * | 2021-12-22 | 2024-02-27 | 淮安澳洋顺昌光电技术有限公司 | Led芯片及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1283875A (zh) * | 1999-05-28 | 2001-02-14 | 华上光电股份有限公司 | 具有不对称谐振隧道的发光二极管 |
US6541798B2 (en) * | 1999-12-06 | 2003-04-01 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device |
US6583443B1 (en) * | 2001-12-26 | 2003-06-24 | United Epitaxy Co., Ltd. | Light emitting diode and method of making the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1450415A3 (en) * | 1993-04-28 | 2005-05-04 | Nichia Corporation | Gallium nitride-based III-V group compound semiconductor device |
KR100348280B1 (ko) | 2000-01-06 | 2002-08-09 | 엘지전자 주식회사 | 청색 발광 소자 제조방법 |
KR100380536B1 (ko) | 2000-09-14 | 2003-04-23 | 주식회사 옵토웰 | 터널접합 구조를 가지는 질화물반도체 발광소자 |
-
2003
- 2003-10-10 KR KR1020030070609A patent/KR20050035325A/ko not_active Application Discontinuation
-
2004
- 2004-04-23 JP JP2004128037A patent/JP2005117005A/ja active Pending
- 2004-05-04 US US10/837,780 patent/US7012284B2/en not_active Expired - Lifetime
- 2004-05-08 CN CNB2004100385886A patent/CN100340007C/zh not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1283875A (zh) * | 1999-05-28 | 2001-02-14 | 华上光电股份有限公司 | 具有不对称谐振隧道的发光二极管 |
US6541798B2 (en) * | 1999-12-06 | 2003-04-01 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device |
US6583443B1 (en) * | 2001-12-26 | 2003-06-24 | United Epitaxy Co., Ltd. | Light emitting diode and method of making the same |
Also Published As
Publication number | Publication date |
---|---|
KR20050035325A (ko) | 2005-04-18 |
CN1606176A (zh) | 2005-04-13 |
US7012284B2 (en) | 2006-03-14 |
US20050077536A1 (en) | 2005-04-14 |
JP2005117005A (ja) | 2005-04-28 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG LED CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRO-MECHANICS CO., LTD. Effective date: 20100909 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: GYEONGGI-DO, KOREA TO: SUWON-SI, GYEONGGI-DO, KOREA |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100909 Address after: Gyeonggi Do Korea Suwon Patentee after: Samsung LED Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electro-Mechanics Co.,Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SAMSUNG LED CO., LTD. Effective date: 20121217 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121217 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG ELECTRONICS Co.,Ltd. Address before: Gyeonggi Do Korea Suwon Patentee before: Samsung LED Co.,Ltd. |
|
CX01 | Expiry of patent term |
Granted publication date: 20070926 |