CH620314A5 - Method and apparatus for chemical treatment in a luminescent discharge - Google Patents
Method and apparatus for chemical treatment in a luminescent discharge Download PDFInfo
- Publication number
- CH620314A5 CH620314A5 CH264277A CH264277A CH620314A5 CH 620314 A5 CH620314 A5 CH 620314A5 CH 264277 A CH264277 A CH 264277A CH 264277 A CH264277 A CH 264277A CH 620314 A5 CH620314 A5 CH 620314A5
- Authority
- CH
- Switzerland
- Prior art keywords
- electrodes
- chamber
- impedance
- plasma
- ionization
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 19
- 239000000126 substance Substances 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000003153 chemical reaction reagent Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 33
- 239000007789 gas Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 241000894007 species Species 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 230000004087 circulation Effects 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000009991 scouring Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J12/00—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor
- B01J12/002—Chemical processes in general for reacting gaseous media with gaseous media; Apparatus specially adapted therefor carried out in the plasma state
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0894—Processes carried out in the presence of a plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US66327176A | 1976-03-03 | 1976-03-03 | |
| US76187977A | 1977-01-24 | 1977-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH620314A5 true CH620314A5 (en) | 1980-11-14 |
Family
ID=27098713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH264277A CH620314A5 (en) | 1976-03-03 | 1977-03-02 | Method and apparatus for chemical treatment in a luminescent discharge |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS52116785A (enExample) |
| CH (1) | CH620314A5 (enExample) |
| DE (1) | DE2708720C2 (enExample) |
| FR (1) | FR2342783A1 (enExample) |
| GB (1) | GB1544172A (enExample) |
| NL (1) | NL7702232A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4182646A (en) * | 1978-07-27 | 1980-01-08 | John Zajac | Process of etching with plasma etch gas |
| US4183781A (en) * | 1978-09-25 | 1980-01-15 | International Business Machines Corporation | Stabilization process for aluminum microcircuits which have been reactive-ion etched |
| US4342901A (en) * | 1980-08-11 | 1982-08-03 | Eaton Corporation | Plasma etching electrode |
| GB2144669B (en) * | 1982-12-07 | 1986-02-26 | Standard Telephones Cables Ltd | Cleaning electrical contacts |
| DE3476818D1 (en) * | 1983-12-16 | 1989-03-30 | Showa Aluminum Corp | Process for producing aluminum material for use in vacuum |
| JPS60211061A (ja) * | 1984-04-05 | 1985-10-23 | Toyota Central Res & Dev Lab Inc | アルミニウム材のイオン窒化方法 |
| US4749589A (en) * | 1984-12-13 | 1988-06-07 | Stc Plc | Method of surface treatment |
| US6900592B2 (en) | 1997-03-18 | 2005-05-31 | The Trustees Of The Stevens Institute Of Technology | Method and apparatus for stabilizing of the glow plasma discharges |
| US5872426A (en) * | 1997-03-18 | 1999-02-16 | Stevens Institute Of Technology | Glow plasma discharge device having electrode covered with perforated dielectric |
| US6879103B1 (en) | 1997-03-18 | 2005-04-12 | The Trustees Of The Stevens Institute Of Technology | Glow plasma discharge device |
| US6228438B1 (en) * | 1999-08-10 | 2001-05-08 | Unakis Balzers Aktiengesellschaft | Plasma reactor for the treatment of large size substrates |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3616403A (en) * | 1968-10-25 | 1971-10-26 | Ibm | Prevention of inversion of p-type semiconductor material during rf sputtering of quartz |
| US3661761A (en) * | 1969-06-02 | 1972-05-09 | Ibm | Rf sputtering apparatus for promoting resputtering of film during deposition |
| US3757733A (en) * | 1971-10-27 | 1973-09-11 | Texas Instruments Inc | Radial flow reactor |
| DE2241229C2 (de) * | 1972-08-22 | 1983-01-20 | Leybold-Heraeus GmbH, 5000 Köln | Vorrichtung zum Ätzen von Substraten durch eine Glimmentladung |
| JPS5740650B2 (enExample) * | 1973-08-11 | 1982-08-28 |
-
1977
- 1977-02-21 GB GB715077A patent/GB1544172A/en not_active Expired
- 1977-03-01 DE DE19772708720 patent/DE2708720C2/de not_active Expired
- 1977-03-02 JP JP2329477A patent/JPS52116785A/ja active Granted
- 1977-03-02 NL NL7702232A patent/NL7702232A/xx not_active Application Discontinuation
- 1977-03-02 CH CH264277A patent/CH620314A5/fr not_active IP Right Cessation
- 1977-03-02 FR FR7706112A patent/FR2342783A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2342783B1 (enExample) | 1982-06-11 |
| NL7702232A (nl) | 1977-09-06 |
| JPS52116785A (en) | 1977-09-30 |
| GB1544172A (en) | 1979-04-11 |
| FR2342783A1 (fr) | 1977-09-30 |
| JPS5347664B2 (enExample) | 1978-12-22 |
| DE2708720C2 (de) | 1982-08-26 |
| DE2708720A1 (de) | 1977-09-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |