CH614070A5 - - Google Patents

Info

Publication number
CH614070A5
CH614070A5 CH593977A CH593977A CH614070A5 CH 614070 A5 CH614070 A5 CH 614070A5 CH 593977 A CH593977 A CH 593977A CH 593977 A CH593977 A CH 593977A CH 614070 A5 CH614070 A5 CH 614070A5
Authority
CH
Switzerland
Application number
CH593977A
Inventor
Kenneth Chang
Marvin Stanley Pittler
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH614070A5 publication Critical patent/CH614070A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688—Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
    • Y10S156/919—Delaminating in preparation for post processing recycling step
    • Y10S156/922—Specified electronic component delaminating in preparation for recycling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
CH593977A 1976-06-30 1977-05-12 CH614070A5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/701,068 US4040891A (en) 1976-06-30 1976-06-30 Etching process utilizing the same positive photoresist layer for two etching steps

Publications (1)

Publication Number Publication Date
CH614070A5 true CH614070A5 (fr) 1979-10-31

Family

ID=24815952

Family Applications (1)

Application Number Title Priority Date Filing Date
CH593977A CH614070A5 (fr) 1976-06-30 1977-05-12

Country Status (11)

Country Link
US (1) US4040891A (fr)
JP (1) JPS533773A (fr)
BE (1) BE855161A (fr)
BR (1) BR7704380A (fr)
CA (1) CA1095310A (fr)
CH (1) CH614070A5 (fr)
DE (1) DE2723944C2 (fr)
FR (1) FR2357068A1 (fr)
GB (1) GB1526638A (fr)
IT (1) IT1115668B (fr)
NL (1) NL7706107A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0072933A1 (fr) * 1981-08-24 1983-03-02 International Business Machines Corporation Procédé pour fabriquer un dessin photolithographique dans une couche de photoresist
EP0435576A1 (fr) * 1989-12-27 1991-07-03 Xerox Corporation Méthode pour utiliser des masques À©rodables pour la production de structures partiellement gravées en des structures de galette à gravure dépendant de l'orientation

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2626516A1 (de) * 1976-06-14 1977-12-22 Siemens Ag Verfahren zum herstellen von lichtleiterstrukturen mit dazwischenliegenden elektroden
US4246595A (en) * 1977-03-08 1981-01-20 Matsushita Electric Industrial Co., Ltd. Electronics circuit device and method of making the same
US4131497A (en) * 1977-07-12 1978-12-26 International Business Machines Corporation Method of manufacturing self-aligned semiconductor devices
US4202914A (en) * 1978-12-29 1980-05-13 International Business Machines Corporation Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask
US4251318A (en) * 1979-06-29 1981-02-17 Hutchinson Industrial Corporation Method of making fully etched type-carrier elements
JPS5626450A (en) * 1979-08-13 1981-03-14 Hitachi Ltd Manufacture of semiconductor device
US4251621A (en) * 1979-11-13 1981-02-17 Bell Telephone Laboratories, Incorporated Selective metal etching of two gold alloys on common surface for semiconductor contacts
US4320190A (en) * 1979-12-18 1982-03-16 Ebauches S.A. Method of manufacturing the substrate of an electrochromic display cell
US4307179A (en) * 1980-07-03 1981-12-22 International Business Machines Corporation Planar metal interconnection system and process
US4397079A (en) * 1981-03-30 1983-08-09 International Business Machines Corp. Process for improving the yield of integrated devices including Schottky barrier diodes
US4472240A (en) * 1981-08-21 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device
US4398964A (en) * 1981-12-10 1983-08-16 Signetics Corporation Method of forming ion implants self-aligned with a cut
US4466849A (en) * 1982-02-24 1984-08-21 Ers Engineering Corporation Process for removing adhesive tape
US4508815A (en) * 1983-11-03 1985-04-02 Mostek Corporation Recessed metallization
US5059454A (en) * 1989-04-26 1991-10-22 Flex Products, Inc. Method for making patterned thin film
US5213916A (en) * 1990-10-30 1993-05-25 International Business Machines Corporation Method of making a gray level mask
US5126006A (en) * 1990-10-30 1992-06-30 International Business Machines Corp. Plural level chip masking
US5240878A (en) * 1991-04-26 1993-08-31 International Business Machines Corporation Method for forming patterned films on a substrate
JP2000199827A (ja) * 1998-10-27 2000-07-18 Sony Corp 光導波装置およびその製造方法
US6372647B1 (en) 1999-12-14 2002-04-16 International Business Machines Corporation Via masked line first dual damascene
US6569763B1 (en) * 2002-04-09 2003-05-27 Northrop Grumman Corporation Method to separate a metal film from an insulating film in a semiconductor device using adhesive tape
US20070037386A1 (en) * 2005-08-13 2007-02-15 Williams John L Sloped thin film substrate edges

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE506677A (fr) * 1950-10-31
NL130926C (fr) * 1959-09-04
GB1048424A (en) * 1963-08-28 1966-11-16 Int Standard Electric Corp Improvements in or relating to semiconductor devices
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
US3542551A (en) * 1968-07-01 1970-11-24 Trw Semiconductors Inc Method of etching patterns into solid state devices
US3649393A (en) * 1970-06-12 1972-03-14 Ibm Variable depth etching of film layers using variable exposures of photoresists
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
US3767397A (en) * 1971-10-21 1973-10-23 Sony Corp Photographic treatment for semiconductor devices or the like
GB1384028A (en) * 1972-08-21 1974-02-12 Hughes Aircraft Co Method of making a semiconductor device
US3853576A (en) * 1973-04-20 1974-12-10 Suburban Screen Print Inc Production of windowed face plates
US3868723A (en) * 1973-06-29 1975-02-25 Ibm Integrated circuit structure accommodating via holes
FR2237311B1 (fr) * 1973-07-12 1977-05-13 Ibm France
US3873361A (en) * 1973-11-29 1975-03-25 Ibm Method of depositing thin film utilizing a lift-off mask
US3878008A (en) * 1974-02-25 1975-04-15 Us Navy Method of forming high reliability mesa diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0072933A1 (fr) * 1981-08-24 1983-03-02 International Business Machines Corporation Procédé pour fabriquer un dessin photolithographique dans une couche de photoresist
EP0435576A1 (fr) * 1989-12-27 1991-07-03 Xerox Corporation Méthode pour utiliser des masques À©rodables pour la production de structures partiellement gravées en des structures de galette à gravure dépendant de l'orientation

Also Published As

Publication number Publication date
BR7704380A (pt) 1978-04-18
BE855161A (fr) 1977-09-16
DE2723944A1 (de) 1978-01-05
GB1526638A (en) 1978-09-27
JPS533773A (en) 1978-01-13
JPS5626139B2 (fr) 1981-06-17
DE2723944C2 (de) 1985-12-19
NL7706107A (nl) 1978-01-03
FR2357068A1 (fr) 1978-01-27
IT1115668B (it) 1986-02-03
FR2357068B1 (fr) 1978-11-03
US4040891A (en) 1977-08-09
CA1095310A (fr) 1981-02-10

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Legal Events

Date Code Title Description
PL Patent ceased