CH590556A5 - - Google Patents
Info
- Publication number
- CH590556A5 CH590556A5 CH1113975A CH1113975A CH590556A5 CH 590556 A5 CH590556 A5 CH 590556A5 CH 1113975 A CH1113975 A CH 1113975A CH 1113975 A CH1113975 A CH 1113975A CH 590556 A5 CH590556 A5 CH 590556A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7431138A FR2284983A1 (fr) | 1974-09-13 | 1974-09-13 | Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede |
Publications (1)
Publication Number | Publication Date |
---|---|
CH590556A5 true CH590556A5 (it) | 1977-08-15 |
Family
ID=9143080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1113975A CH590556A5 (it) | 1974-09-13 | 1975-08-28 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5160174A (it) |
CH (1) | CH590556A5 (it) |
DE (1) | DE2541118A1 (it) |
FR (1) | FR2284983A1 (it) |
NL (1) | NL7510485A (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2834724A1 (de) * | 1978-08-08 | 1980-02-14 | Siemens Ag | Mos-feldeffekttransistoren fuer hoehere spannungen |
US4279069A (en) * | 1979-02-21 | 1981-07-21 | Rockwell International Corporation | Fabrication of a nonvolatile memory array device |
JPS58151062A (ja) * | 1982-01-28 | 1983-09-08 | Toshiba Corp | 半導体装置 |
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1974
- 1974-09-13 FR FR7431138A patent/FR2284983A1/fr active Granted
-
1975
- 1975-08-28 CH CH1113975A patent/CH590556A5/xx not_active IP Right Cessation
- 1975-09-05 NL NL7510485A patent/NL7510485A/xx not_active Application Discontinuation
- 1975-09-12 JP JP11084375A patent/JPS5160174A/ja active Pending
- 1975-09-15 DE DE19752541118 patent/DE2541118A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2284983B1 (it) | 1978-06-09 |
DE2541118A1 (de) | 1976-03-25 |
FR2284983A1 (fr) | 1976-04-09 |
NL7510485A (nl) | 1976-03-16 |
JPS5160174A (en) | 1976-05-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |