CH582426A5 - - Google Patents
Info
- Publication number
- CH582426A5 CH582426A5 CH987374A CH987374A CH582426A5 CH 582426 A5 CH582426 A5 CH 582426A5 CH 987374 A CH987374 A CH 987374A CH 987374 A CH987374 A CH 987374A CH 582426 A5 CH582426 A5 CH 582426A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2340128A DE2340128C3 (de) | 1973-08-08 | 1973-08-08 | Halbleiterbauelement hoher Sperrfähigkeit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH582426A5 true CH582426A5 (pt) | 1976-11-30 |
Family
ID=5889197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH987374A CH582426A5 (pt) | 1973-08-08 | 1974-07-18 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4092663A (pt) |
| JP (2) | JPS5040280A (pt) |
| AR (1) | AR199857A1 (pt) |
| BR (1) | BR7406470D0 (pt) |
| CH (1) | CH582426A5 (pt) |
| DE (1) | DE2340128C3 (pt) |
| FR (1) | FR2240530B3 (pt) |
| GB (1) | GB1482585A (pt) |
| IT (1) | IT1017891B (pt) |
| SE (1) | SE403537B (pt) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4255757A (en) * | 1978-12-05 | 1981-03-10 | International Rectifier Corporation | High reverse voltage semiconductor device with fast recovery time with central depression |
| JPS58170044A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 半導体素子 |
| GB8703405D0 (en) * | 1987-02-13 | 1987-03-18 | Marconi Electronic Devices | Power semi-conductor device |
| US6063046A (en) * | 1997-04-11 | 2000-05-16 | Allum; John H. | Method and apparatus for the diagnosis and rehabilitation of balance disorders |
| DE102004063180B4 (de) * | 2004-12-29 | 2020-02-06 | Robert Bosch Gmbh | Verfahren zum Herstellen von Halbleiterchips aus einem Siliziumwafer und damit hergestellte Halbleiterbauelemente |
| JP4817448B2 (ja) * | 2006-11-22 | 2011-11-16 | 学校法人日本大学 | コンクリート強度試験用供試体及び供試体製造用型枠 |
| US20160148875A1 (en) * | 2013-08-08 | 2016-05-26 | Sharp Kabushiki Kaisha | Semiconductor element substrate, and method for producing same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
| GB1079261A (en) * | 1965-01-01 | 1967-08-16 | Westinghouse Brake & Signal | Smei-conductor elements and their manufacture |
| NL6603372A (pt) * | 1965-03-25 | 1966-09-26 | ||
| US3458781A (en) * | 1966-07-18 | 1969-07-29 | Unitrode Corp | High-voltage planar semiconductor devices |
| JPS4421068Y1 (pt) * | 1966-09-29 | 1969-09-08 | ||
| JPS4418910Y1 (pt) * | 1966-11-07 | 1969-08-14 | ||
| GB1201732A (en) * | 1967-06-27 | 1970-08-12 | Westinghouse Brake & Signal | Manufacture of semiconductor elements |
| GB1211627A (en) * | 1968-08-06 | 1970-11-11 | Westinghouse Brake & Signal | Methods of manufacture of semiconductor elements and elements manufactured therby |
| US3697829A (en) * | 1968-12-30 | 1972-10-10 | Gen Electric | Semiconductor devices with improved voltage breakdown characteristics |
-
1973
- 1973-08-08 DE DE2340128A patent/DE2340128C3/de not_active Expired
-
1974
- 1974-07-17 JP JP49081258A patent/JPS5040280A/ja active Pending
- 1974-07-18 FR FR7424964A patent/FR2240530B3/fr not_active Expired
- 1974-07-18 CH CH987374A patent/CH582426A5/xx not_active IP Right Cessation
- 1974-07-31 AR AR255002A patent/AR199857A1/es active
- 1974-08-02 IT IT25963/74A patent/IT1017891B/it active
- 1974-08-05 GB GB34367/74A patent/GB1482585A/en not_active Expired
- 1974-08-05 US US05/494,856 patent/US4092663A/en not_active Expired - Lifetime
- 1974-08-06 BR BR6470/74A patent/BR7406470D0/pt unknown
- 1974-08-07 SE SE7410115A patent/SE403537B/xx unknown
-
1981
- 1981-06-30 JP JP1981096228U patent/JPS5735056U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE7410115L (pt) | 1975-02-10 |
| US4092663A (en) | 1978-05-30 |
| DE2340128B2 (de) | 1978-02-23 |
| DE2340128A1 (de) | 1975-02-20 |
| FR2240530A1 (pt) | 1975-03-07 |
| SE403537B (sv) | 1978-08-21 |
| JPS5040280A (pt) | 1975-04-12 |
| IT1017891B (it) | 1977-08-10 |
| DE2340128C3 (de) | 1982-08-12 |
| GB1482585A (en) | 1977-08-10 |
| FR2240530B3 (pt) | 1977-05-20 |
| BR7406470D0 (pt) | 1975-05-20 |
| JPS5735056U (pt) | 1982-02-24 |
| AR199857A1 (es) | 1974-09-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |