CH580358A5 - - Google Patents

Info

Publication number
CH580358A5
CH580358A5 CH1278974A CH1278974A CH580358A5 CH 580358 A5 CH580358 A5 CH 580358A5 CH 1278974 A CH1278974 A CH 1278974A CH 1278974 A CH1278974 A CH 1278974A CH 580358 A5 CH580358 A5 CH 580358A5
Authority
CH
Switzerland
Application number
CH1278974A
Original Assignee
Centre Electron Horloger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electron Horloger filed Critical Centre Electron Horloger
Priority to CH1278974A priority Critical patent/CH580358A5/xx
Priority to DE2541352A priority patent/DE2541352C2/de
Priority to JP50113548A priority patent/JPS5852364B2/ja
Priority to US05/615,709 priority patent/US4013979A/en
Publication of CH580358A5 publication Critical patent/CH580358A5/xx

Links

Classifications

    • GPHYSICS
    • G04HOROLOGY
    • G04FTIME-INTERVAL MEASURING
    • G04F5/00Apparatus for producing preselected time intervals for use as timing standards
    • G04F5/04Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses
    • G04F5/06Apparatus for producing preselected time intervals for use as timing standards using oscillators with electromechanical resonators producing electric oscillations or timing pulses using piezoelectric resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/364Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354Astable circuits
    • H03K3/3545Stabilisation of output, e.g. using crystal

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CH1278974A 1974-09-20 1974-09-20 CH580358A5 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CH1278974A CH580358A5 (ko) 1974-09-20 1974-09-20
DE2541352A DE2541352C2 (de) 1974-09-20 1975-09-17 Oszillator in C-MOS-Technologie
JP50113548A JPS5852364B2 (ja) 1974-09-20 1975-09-19 コンプリメンタリ mos トランジスタハツシンキ
US05/615,709 US4013979A (en) 1974-09-20 1975-09-22 Cmos oscillator with first and second mos transistors of opposed type integrated on the same substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1278974A CH580358A5 (ko) 1974-09-20 1974-09-20

Publications (1)

Publication Number Publication Date
CH580358A5 true CH580358A5 (ko) 1976-09-30

Family

ID=4386415

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1278974A CH580358A5 (ko) 1974-09-20 1974-09-20

Country Status (4)

Country Link
US (1) US4013979A (ko)
JP (1) JPS5852364B2 (ko)
CH (1) CH580358A5 (ko)
DE (1) DE2541352C2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0061421A1 (fr) * 1981-03-24 1982-09-29 Asulab S.A. Circuit intégré pour oscillateur à fréquence réglable
US7598821B2 (en) 2006-10-27 2009-10-06 Em Microelectronic-Marin S.A. Amplitude controlled quartz oscillator with broad voltage and temperature range

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5190549A (ko) * 1975-02-06 1976-08-09
JPS52143822A (en) * 1976-05-26 1977-11-30 Fuji Photo Optical Co Ltd Exposure control circuit for camera
JPS5310047A (en) * 1976-07-16 1978-01-30 Seiko Instr & Electronics Ltd Electronic circuit
US4048590A (en) * 1976-07-21 1977-09-13 General Electric Company Integrated crystal oscillator circuit with few external components
US4122414A (en) * 1977-10-11 1978-10-24 Harris Corporation CMOS negative resistance oscillator
US4208639A (en) * 1978-06-16 1980-06-17 Solid State Scientific Inc. Constant current source stabilized semiconductor oscillator
JPS5528680A (en) * 1978-08-22 1980-02-29 Nec Corp Oscillation circuit
JPS55109003A (en) * 1979-02-16 1980-08-21 Citizen Watch Co Ltd Oscillation circuit
US4360789A (en) * 1980-07-17 1982-11-23 Hughes Aircraft Company Very low current pierce oscillator
GB2097581A (en) * 1981-04-24 1982-11-03 Hitachi Ltd Shielding semiconductor integrated circuit devices from light
JPS5866709U (ja) * 1981-10-29 1983-05-06 長野日本無線株式会社 安定化発振回路
JPS59205A (ja) * 1982-05-26 1984-01-05 Fujitsu Ltd 利得補正付き発振回路
FR2542526A1 (fr) * 1983-03-09 1984-09-14 American Telephone & Telegraph Oscillateur a quartz
DE68926256T2 (de) * 1988-01-07 1996-09-19 Fujitsu Ltd Komplementäre Halbleiteranordnung
DE3831176A1 (de) * 1988-09-13 1990-03-22 Siemens Ag Oszillatorzelle
US5184094A (en) * 1991-08-16 1993-02-02 Moore Products Co. Low power oscillator circuits
DE69320703T2 (de) * 1992-06-15 1999-03-25 Koninklijke Philips Electronics N.V., Eindhoven Oszillatorschaltung mit einem Tastverhältnis von 50%
FR2716048B1 (fr) * 1994-02-10 1996-04-26 Matra Mhs Oscillateur asservi en courant.
US5568093A (en) * 1995-05-18 1996-10-22 National Semiconductor Corporation Efficient, high frequency, class A-B amplifier for translating low voltage clock signal levels to CMOS logic levels
DE19835198A1 (de) * 1998-08-04 2000-02-24 Zentr Mikroelekt Dresden Gmbh Verfahren zur Erzeugung einer Wechselspannung mit eienr quartzstabilisierten Frequenz und Pierce-Oszillatorverstärker zur Durchführung des Verfahrens
GB2402276B (en) * 2003-03-07 2005-08-03 Motorola Inc Amplitude level control circuit
US7123113B1 (en) 2004-06-11 2006-10-17 Cypress Semiconductor Corp. Regulated, symmetrical crystal oscillator circuit and method
US7859355B2 (en) * 2005-03-24 2010-12-28 Cypress Semiconductor Corporation Regulated capacitive loading and gain control of a crystal oscillator during startup and steady state operation
US8035455B1 (en) 2005-12-21 2011-10-11 Cypress Semiconductor Corporation Oscillator amplitude control network
US7902933B1 (en) 2006-03-29 2011-03-08 Cypress Semiconductor Corporation Oscillator circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH1582668A4 (ko) * 1968-10-23 1970-11-13
JPS4941055A (ko) * 1972-08-28 1974-04-17
US3887881A (en) * 1974-01-24 1975-06-03 American Micro Syst Low voltage CMOS amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0061421A1 (fr) * 1981-03-24 1982-09-29 Asulab S.A. Circuit intégré pour oscillateur à fréquence réglable
FR2502864A1 (fr) * 1981-03-24 1982-10-01 Asulab Sa Circuit integre pour oscillateur a frequence reglable
US7598821B2 (en) 2006-10-27 2009-10-06 Em Microelectronic-Marin S.A. Amplitude controlled quartz oscillator with broad voltage and temperature range

Also Published As

Publication number Publication date
JPS5852364B2 (ja) 1983-11-22
JPS5176951A (en) 1976-07-03
DE2541352A1 (de) 1976-04-08
US4013979A (en) 1977-03-22
DE2541352C2 (de) 1985-10-31

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Legal Events

Date Code Title Description
PL Patent ceased