CH563467A5 - - Google Patents

Info

Publication number
CH563467A5
CH563467A5 CH48972A CH48972A CH563467A5 CH 563467 A5 CH563467 A5 CH 563467A5 CH 48972 A CH48972 A CH 48972A CH 48972 A CH48972 A CH 48972A CH 563467 A5 CH563467 A5 CH 563467A5
Authority
CH
Switzerland
Application number
CH48972A
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Priority to IN16/CAL/1973A priority Critical patent/IN137844B/en
Publication of CH563467A5 publication Critical patent/CH563467A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
    • H05H7/14—Vacuum chambers
    • H05H7/18—Cavities; Resonators
    • H05H7/20—Cavities; Resonators with superconductive walls
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/26—Anodisation of refractory metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Particle Accelerators (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
CH48972A 1971-02-12 1972-01-13 CH563467A5 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
IN16/CAL/1973A IN137844B (de) 1972-01-13 1973-01-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2106628A DE2106628C3 (de) 1971-02-12 1971-02-12 Verfahren zur Oberflächenbehandlung von supraleitenden Niob-Hohlraumresonatoren

Publications (1)

Publication Number Publication Date
CH563467A5 true CH563467A5 (de) 1975-06-30

Family

ID=5798542

Family Applications (1)

Application Number Title Priority Date Filing Date
CH48972A CH563467A5 (de) 1971-02-12 1972-01-13

Country Status (10)

Country Link
US (1) US3784452A (de)
JP (1) JPS5617847B1 (de)
CA (1) CA965187A (de)
CH (1) CH563467A5 (de)
DE (1) DE2106628C3 (de)
FR (1) FR2125323B1 (de)
GB (1) GB1335165A (de)
IT (1) IT947373B (de)
NL (1) NL7200891A (de)
SE (1) SE368232B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2239425C3 (de) * 1972-08-10 1978-04-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur elektrolytischen Behandlung von Nioboberflächen für Wechselstromanwendungen
DE2608089C3 (de) * 1976-02-27 1979-03-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer supraleitfähigen Nb3 Sn-Schicht auf einer Nioboberfläche für Hochfrequenzanwendungen
DE2635741C2 (de) * 1976-08-09 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer supraleitfähigen Nb3 Sn-Schicht auf einer Nioboberfläche für Hochfrequenzanwendungen
DE2965863D1 (en) * 1978-10-16 1983-08-18 Imi Marston Ltd Use of treated niobium or tantalum as a connector, such a connector and a cathodic protection system using such a connector
US4514254A (en) * 1983-09-26 1985-04-30 International Business Machines Corporation Groundplane post-etch anodization
US4713150A (en) * 1985-11-08 1987-12-15 Parker Pen Ltd. Process for preparing a part for color anodization
DE3736301A1 (de) * 1987-10-27 1989-05-11 Basf Ag Verfahren zum einstellen der sprungtemperatur von keramischen supraleitern
US5909012A (en) * 1996-10-21 1999-06-01 Ford Motor Company Method of making a three-dimensional part with buried conductors
US7151347B1 (en) * 2005-06-28 2006-12-19 Jefferson Science Associates Llc Passivated niobium cavities
US8673820B2 (en) * 2007-10-26 2014-03-18 Department Of Atomic Energy Method of qualifying niobium and/or other super conducting materials for reliable fabrication of superconducting radio frequency (SCRF) cavities
CN102808209B (zh) * 2011-06-03 2015-06-10 上海造币有限公司 铌及铌合金表面氧化着色的方法
US11202362B1 (en) 2018-02-15 2021-12-14 Christopher Mark Rey Superconducting resonant frequency cavities, related components, and fabrication methods thereof
US11464102B2 (en) 2018-10-06 2022-10-04 Fermi Research Alliance, Llc Methods and systems for treatment of superconducting materials to improve low field performance
US11266005B2 (en) 2019-02-07 2022-03-01 Fermi Research Alliance, Llc Methods for treating superconducting cavities
US20220364257A1 (en) * 2021-05-12 2022-11-17 Jefferson Science Associates, Llc Chemical soak to remove furnace contamination without disrupting surface oxide or removing bulk materials
US11920253B2 (en) * 2021-05-17 2024-03-05 Jefferson Science Associates, Llc Methods of controllable interstitial oxygen doping in niobium

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3314867A (en) * 1963-11-01 1967-04-18 James K Gore Method of etching tantalum and niobium for electroplating
US3378471A (en) * 1965-06-17 1968-04-16 Gen Electric Anodized tantalum and niobium and method of forming an oxide coating thereon
US3436258A (en) * 1965-12-30 1969-04-01 Gen Electric Method of forming an insulated ground plane for a cryogenic device
DE1927825B2 (de) * 1969-05-31 1971-06-03 Verfahren zur herstellung von supraleitenden hohlraumreso natoren insbesondere fuer teilchenbeschleuniger

Also Published As

Publication number Publication date
FR2125323B1 (de) 1975-10-24
DE2106628B2 (de) 1973-07-12
IT947373B (it) 1973-05-21
NL7200891A (de) 1972-08-15
US3784452A (en) 1974-01-08
GB1335165A (en) 1973-10-24
SE368232B (de) 1974-06-24
CA965187A (en) 1975-03-25
FR2125323A1 (de) 1972-09-29
DE2106628C3 (de) 1974-02-14
JPS5617847B1 (de) 1981-04-24
DE2106628A1 (de) 1972-08-24

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Legal Events

Date Code Title Description
PL Patent ceased