CH546482A - Halbleiterbauelement. - Google Patents

Halbleiterbauelement.

Info

Publication number
CH546482A
CH546482A CH1237072A CH546482DA CH546482A CH 546482 A CH546482 A CH 546482A CH 1237072 A CH1237072 A CH 1237072A CH 546482D A CH546482D A CH 546482DA CH 546482 A CH546482 A CH 546482A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Application number
CH1237072A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712153889 external-priority patent/DE2153889C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH546482A publication Critical patent/CH546482A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822Beam leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12032Schottky diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CH1237072A 1971-10-28 1972-08-21 Halbleiterbauelement. CH546482A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712153889 DE2153889C3 (de) 1971-10-28 Beam-lead-Halbleiterbauelement und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
CH546482A true CH546482A (de) 1974-02-28

Family

ID=5823693

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1237072A CH546482A (de) 1971-10-28 1972-08-21 Halbleiterbauelement.

Country Status (11)

Country Link
US (1) US3808470A (xx)
JP (1) JPS5630701B2 (xx)
BE (1) BE790652A (xx)
CA (1) CA978660A (xx)
CH (1) CH546482A (xx)
FR (1) FR2158019B1 (xx)
GB (1) GB1359780A (xx)
IT (1) IT969931B (xx)
LU (1) LU66376A1 (xx)
NL (1) NL7214432A (xx)
SE (1) SE376115B (xx)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143384A (en) * 1975-12-11 1979-03-06 Raytheon Company Low parasitic capacitance diode
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
US4499656A (en) * 1983-08-15 1985-02-19 Sperry Corporation Deep mesa process for fabricating monolithic integrated Schottky barrier diode for millimeter wave mixers
US4467521A (en) * 1983-08-15 1984-08-28 Sperry Corporation Selective epitaxial growth of gallium arsenide with selective orientation
US4912540A (en) * 1986-12-17 1990-03-27 Advanced Micro Devices, Inc. Reduced area butting contact structure
US5021840A (en) * 1987-08-18 1991-06-04 Texas Instruments Incorporated Schottky or PN diode with composite sidewall
US5280194A (en) * 1988-11-21 1994-01-18 Micro Technology Partners Electrical apparatus with a metallic layer coupled to a lower region of a substrate and metallic layer coupled to a lower region of a semiconductor device
US5403729A (en) * 1992-05-27 1995-04-04 Micro Technology Partners Fabricating a semiconductor with an insulative coating
US5592022A (en) * 1992-05-27 1997-01-07 Chipscale, Inc. Fabricating a semiconductor with an insulative coating
US5656547A (en) * 1994-05-11 1997-08-12 Chipscale, Inc. Method for making a leadless surface mounted device with wrap-around flange interface contacts
GB2302452B (en) * 1994-06-09 1998-11-18 Chipscale Inc Resistor fabrication
US6100194A (en) 1998-06-22 2000-08-08 Stmicroelectronics, Inc. Silver metallization by damascene method
ITTO20011038A1 (it) * 2001-10-30 2003-04-30 St Microelectronics Srl Procedimento per la fabbricazione di una fetta semiconduttrice integrante dispositivi elettronici e una struttura per il disaccoppiamento el
KR20110040884A (ko) * 2008-07-07 2011-04-20 산드빅 인터렉츄얼 프로퍼티 에이비 변색방지 은 합금

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3290565A (en) * 1963-10-24 1966-12-06 Philco Corp Glass enclosed, passivated semiconductor with contact means of alternate layers of chromium, silver and chromium
NL6701136A (xx) * 1967-01-25 1968-07-26

Also Published As

Publication number Publication date
NL7214432A (xx) 1973-05-02
JPS4853674A (xx) 1973-07-27
GB1359780A (en) 1974-07-10
CA978660A (en) 1975-11-25
FR2158019A1 (xx) 1973-06-08
BE790652A (fr) 1973-02-15
LU66376A1 (xx) 1973-01-23
JPS5630701B2 (xx) 1981-07-16
DE2153889B2 (de) 1977-04-28
IT969931B (it) 1974-04-10
FR2158019B1 (xx) 1976-08-20
SE376115B (xx) 1975-05-05
US3808470A (en) 1974-04-30
DE2153889A1 (de) 1973-05-03

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Legal Events

Date Code Title Description
PL Patent ceased