CH542519A - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the sameInfo
- Publication number
- CH542519A CH542519A CH570072A CH570072A CH542519A CH 542519 A CH542519 A CH 542519A CH 570072 A CH570072 A CH 570072A CH 570072 A CH570072 A CH 570072A CH 542519 A CH542519 A CH 542519A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing
- same
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7107805.A NL160988C (en) | 1971-06-08 | 1971-06-08 | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE. |
Publications (1)
Publication Number | Publication Date |
---|---|
CH542519A true CH542519A (en) | 1973-09-30 |
Family
ID=19813322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH570072A CH542519A (en) | 1971-06-08 | 1972-04-18 | Semiconductor device and method of manufacturing the same |
Country Status (16)
Country | Link |
---|---|
JP (5) | JPS5416194B1 (en) |
AT (1) | AT351597B (en) |
BE (1) | BE782285A (en) |
BR (1) | BR7202321D0 (en) |
CA (1) | CA963172A (en) |
CH (1) | CH542519A (en) |
DE (1) | DE2218680C2 (en) |
DK (1) | DK135819B (en) |
ES (2) | ES401854A1 (en) |
FR (1) | FR2140383B1 (en) |
GB (1) | GB1389311A (en) |
IN (1) | IN139051B (en) |
IT (1) | IT958758B (en) |
NL (1) | NL160988C (en) |
NO (1) | NO134676C (en) |
SE (1) | SE371333B (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7205000A (en) * | 1972-04-14 | 1973-10-16 | ||
US3920481A (en) * | 1974-06-03 | 1975-11-18 | Fairchild Camera Instr Co | Process for fabricating insulated gate field effect transistor structure |
CA1017073A (en) * | 1974-06-03 | 1977-09-06 | Fairchild Camera And Instrument Corporation | Complementary insulated gate field effect transistor structure and process for fabricating the structure |
US3943542A (en) * | 1974-11-06 | 1976-03-09 | International Business Machines, Corporation | High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same |
JPS5286083A (en) | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Production of complimentary isolation gate field effect transistor |
US4277882A (en) * | 1978-12-04 | 1981-07-14 | Fairchild Camera And Instrument Corporation | Method of producing a metal-semiconductor field-effect transistor |
JPS58222558A (en) * | 1982-06-18 | 1983-12-24 | Hitachi Ltd | Semiconductor device |
JPS5955052A (en) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JPS5987923U (en) * | 1982-12-06 | 1984-06-14 | 松下冷機株式会社 | Connection device for synthetic resin products |
US4470191A (en) * | 1982-12-09 | 1984-09-11 | International Business Machines Corporation | Process for making complementary transistors by sequential implantations using oxidation barrier masking layer |
JPS60106890A (en) * | 1983-11-14 | 1985-06-12 | Shin Etsu Chem Co Ltd | Grease composition |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356858A (en) * | 1963-06-18 | 1967-12-05 | Fairchild Camera Instr Co | Low stand-by power complementary field effect circuitry |
GB1086607A (en) * | 1965-06-03 | 1967-10-11 | Ncr Co | Method of electrically isolating components in solid-state electronic circuits |
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
US3534234A (en) * | 1966-12-15 | 1970-10-13 | Texas Instruments Inc | Modified planar process for making semiconductor devices having ultrafine mesa type geometry |
US3470390A (en) * | 1968-02-02 | 1969-09-30 | Westinghouse Electric Corp | Integrated back-to-back diodes to prevent breakdown of mis gate dielectric |
-
1971
- 1971-06-08 NL NL7107805.A patent/NL160988C/en not_active IP Right Cessation
-
1972
- 1972-04-18 JP JP3838872A patent/JPS5416194B1/ja active Pending
- 1972-04-18 FR FR7213556A patent/FR2140383B1/fr not_active Expired
- 1972-04-18 IT IT68209/72A patent/IT958758B/en active
- 1972-04-18 CH CH570072A patent/CH542519A/en not_active IP Right Cessation
- 1972-04-18 BE BE782285A patent/BE782285A/en not_active IP Right Cessation
- 1972-04-18 GB GB1786072A patent/GB1389311A/en not_active Expired
- 1972-04-18 BR BR2321/72A patent/BR7202321D0/en unknown
- 1972-04-18 NO NO1346/72A patent/NO134676C/no unknown
- 1972-04-18 AT AT338972A patent/AT351597B/en not_active IP Right Cessation
- 1972-04-18 DK DK188272AA patent/DK135819B/en not_active IP Right Cessation
- 1972-04-18 ES ES401854A patent/ES401854A1/en not_active Expired
- 1972-04-18 SE SE7205034A patent/SE371333B/xx unknown
- 1972-04-18 CA CA140,068A patent/CA963172A/en not_active Expired
- 1972-04-18 DE DE2218680A patent/DE2218680C2/en not_active Expired
- 1972-11-15 ES ES408617A patent/ES408617A1/en not_active Expired
-
1973
- 1973-03-15 IN IN584/CAL/73A patent/IN139051B/en unknown
-
1976
- 1976-02-04 JP JP1043876A patent/JPS5416397B2/ja not_active Expired
- 1976-02-04 JP JP51010439A patent/JPS51139276A/en active Granted
- 1976-02-04 JP JP51010440A patent/JPS51139277A/en active Granted
-
1980
- 1980-06-19 JP JP8223280A patent/JPS568880A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CA963172A (en) | 1975-02-18 |
NO134676C (en) | 1976-11-24 |
FR2140383B1 (en) | 1977-08-19 |
NL7107805A (en) | 1972-12-12 |
JPS51102481A (en) | 1976-09-09 |
ES401854A1 (en) | 1975-10-16 |
JPS5415667B2 (en) | 1979-06-16 |
NL160988C (en) | 1979-12-17 |
DK135819B (en) | 1977-06-27 |
FR2140383A1 (en) | 1973-01-19 |
IT958758B (en) | 1973-10-30 |
GB1389311A (en) | 1975-04-03 |
DK135819C (en) | 1977-11-28 |
ES408617A1 (en) | 1975-10-01 |
JPS5415668B2 (en) | 1979-06-16 |
BR7202321D0 (en) | 1973-06-07 |
JPS51139277A (en) | 1976-12-01 |
ATA338972A (en) | 1979-01-15 |
NL160988B (en) | 1979-07-16 |
JPS568880A (en) | 1981-01-29 |
JPS5416194B1 (en) | 1979-06-20 |
JPS51139276A (en) | 1976-12-01 |
SE371333B (en) | 1974-11-11 |
AT351597B (en) | 1979-08-10 |
NO134676B (en) | 1976-08-16 |
DE2218680A1 (en) | 1972-12-28 |
JPS5416397B2 (en) | 1979-06-21 |
IN139051B (en) | 1976-05-01 |
BE782285A (en) | 1972-10-18 |
DE2218680C2 (en) | 1982-04-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |