CH519787A - Verfahren zum Herstellen einer Halbleitervorrichtung - Google Patents

Verfahren zum Herstellen einer Halbleitervorrichtung

Info

Publication number
CH519787A
CH519787A CH613368A CH613368A CH519787A CH 519787 A CH519787 A CH 519787A CH 613368 A CH613368 A CH 613368A CH 613368 A CH613368 A CH 613368A CH 519787 A CH519787 A CH 519787A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
CH613368A
Other languages
German (de)
English (en)
Inventor
Cornelis Everstejn Franciscus
Leonardus Peek Hermanus
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH519787A publication Critical patent/CH519787A/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258Diffusion into or out of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
CH613368A 1967-04-28 1968-04-25 Verfahren zum Herstellen einer Halbleitervorrichtung CH519787A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6706005A NL6706005A (en:Method) 1967-04-28 1967-04-28

Publications (1)

Publication Number Publication Date
CH519787A true CH519787A (de) 1972-02-29

Family

ID=19799991

Family Applications (1)

Application Number Title Priority Date Filing Date
CH613368A CH519787A (de) 1967-04-28 1968-04-25 Verfahren zum Herstellen einer Halbleitervorrichtung

Country Status (6)

Country Link
BE (1) BE714327A (en:Method)
CH (1) CH519787A (en:Method)
FR (1) FR1561762A (en:Method)
GB (1) GB1231103A (en:Method)
NL (1) NL6706005A (en:Method)
SE (1) SE350148B (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2130793B (en) * 1982-11-22 1986-09-03 Gen Electric Co Plc Forming a doped region in a semiconductor body

Also Published As

Publication number Publication date
BE714327A (en:Method) 1968-10-28
DE1769177A1 (de) 1971-10-21
SE350148B (en:Method) 1972-10-16
GB1231103A (en:Method) 1971-05-12
DE1769177B2 (de) 1977-06-23
NL6706005A (en:Method) 1968-10-29
FR1561762A (en:Method) 1969-03-28

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Legal Events

Date Code Title Description
PL Patent ceased