CH496323A - Verfahren zur Herstellung einer integrierten Halbleiterschaltung - Google Patents

Verfahren zur Herstellung einer integrierten Halbleiterschaltung

Info

Publication number
CH496323A
CH496323A CH1617269A CH1617269A CH496323A CH 496323 A CH496323 A CH 496323A CH 1617269 A CH1617269 A CH 1617269A CH 1617269 A CH1617269 A CH 1617269A CH 496323 A CH496323 A CH 496323A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor circuit
integrated semiconductor
integrated
circuit
Prior art date
Application number
CH1617269A
Other languages
German (de)
English (en)
Inventor
Kobayashi Isamu
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP43079129A external-priority patent/JPS4914111B1/ja
Priority claimed from JP43079130A external-priority patent/JPS4826180B1/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of CH496323A publication Critical patent/CH496323A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10P14/24—
    • H10P14/271—
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3444—
    • H10P32/15—
    • H10P95/00—
    • H10W10/031—
    • H10W10/30—
    • H10W15/00—
    • H10W15/01—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
CH1617269A 1967-12-05 1969-10-30 Verfahren zur Herstellung einer integrierten Halbleiterschaltung CH496323A (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7803267 1967-12-05
JP43079129A JPS4914111B1 (Direct) 1968-10-30 1968-10-30
JP43079130A JPS4826180B1 (Direct) 1968-10-30 1968-10-30

Publications (1)

Publication Number Publication Date
CH496323A true CH496323A (de) 1970-09-15

Family

ID=27302593

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1617269A CH496323A (de) 1967-12-05 1969-10-30 Verfahren zur Herstellung einer integrierten Halbleiterschaltung

Country Status (4)

Country Link
BE (1) BE740938A (Direct)
CH (1) CH496323A (Direct)
DE (1) DE1954771B2 (Direct)
FR (1) FR2030578A6 (Direct)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7105000A (Direct) * 1971-04-14 1972-10-17

Also Published As

Publication number Publication date
BE740938A (Direct) 1970-04-01
DE1954771A1 (de) 1970-05-06
DE1954771B2 (de) 1979-03-08
FR2030578A6 (fr) 1970-11-13

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Legal Events

Date Code Title Description
PL Patent ceased