CH484514A - Semiconductor arrangement provided with an easily solderable contact electrode and method for its production - Google Patents

Semiconductor arrangement provided with an easily solderable contact electrode and method for its production

Info

Publication number
CH484514A
CH484514A CH1757768A CH1757768A CH484514A CH 484514 A CH484514 A CH 484514A CH 1757768 A CH1757768 A CH 1757768A CH 1757768 A CH1757768 A CH 1757768A CH 484514 A CH484514 A CH 484514A
Authority
CH
Switzerland
Prior art keywords
production
contact electrode
arrangement provided
semiconductor arrangement
solderable contact
Prior art date
Application number
CH1757768A
Other languages
German (de)
Inventor
Schaefer Horst
Flohrs Peter
Original Assignee
Semikron Gleichrichterbau
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Gleichrichterbau filed Critical Semikron Gleichrichterbau
Priority to AT1064269A priority Critical patent/AT306637B/en
Publication of CH484514A publication Critical patent/CH484514A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
CH1757768A 1967-12-01 1968-11-26 Semiconductor arrangement provided with an easily solderable contact electrode and method for its production CH484514A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT1064269A AT306637B (en) 1968-11-26 1969-11-13 garage

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0113099 1967-12-01
DE19671614668 DE1614668B2 (en) 1967-12-01 1967-12-01 Semiconductor arrangement with large-area, easily solderable contact electrodes and process for their production

Publications (1)

Publication Number Publication Date
CH484514A true CH484514A (en) 1970-01-15

Family

ID=25753707

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1757768A CH484514A (en) 1967-12-01 1968-11-26 Semiconductor arrangement provided with an easily solderable contact electrode and method for its production

Country Status (4)

Country Link
CH (1) CH484514A (en)
DE (1) DE1614668B2 (en)
FR (1) FR1587273A (en)
GB (1) GB1207010A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065588A (en) * 1975-11-20 1977-12-27 Rca Corporation Method of making gold-cobalt contact for silicon devices
DE2724641C2 (en) * 1977-06-01 1986-04-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Process for applying soldering to gold layers
JPS5678130A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Semiconductor device and its manufacture
NL8004139A (en) * 1980-07-18 1982-02-16 Philips Nv SEMICONDUCTOR DEVICE.
DE3122387A1 (en) * 1981-06-05 1982-12-23 Deutsche Itt Industries Gmbh, 7800 Freiburg Glass-encapsulated semiconductor diode and method of manufacturing it
DE3232837A1 (en) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING A 2-LEVEL METALIZATION FOR SEMICONDUCTOR COMPONENTS, IN PARTICULAR FOR PERFORMANCE SEMICONDUCTOR COMPONENTS LIKE THYRISTORS
JPH0730095A (en) * 1993-06-25 1995-01-31 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
DE102005029246B4 (en) 2005-03-31 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Semiconductor chip with a solder layer sequence and method for soldering a semiconductor chip
DE102006035876A1 (en) * 2006-08-01 2008-02-07 Infineon Technologies Ag Multi chip module e.g. sensor chip module, has chip connected with one of main surfaces with thermal contact surface of heat conductor, and has electrical connections connected with electrical contact surfaces of electrical conductors
EP2089901A4 (en) * 2006-11-09 2011-05-18 Interplex Qlp Inc Microcircuit package having ductile layer
CN108400227B (en) * 2018-05-04 2023-08-15 佛山市国星半导体技术有限公司 Flip LED chip and manufacturing method thereof
NL2021598B1 (en) * 2018-09-10 2020-05-01 Ampleon Netherlands Bv Seed layer for electroplating eutectic AuSn solder

Also Published As

Publication number Publication date
DE1614668A1 (en) 1970-10-29
GB1207010A (en) 1970-09-30
DE1614668B2 (en) 1974-08-29
FR1587273A (en) 1970-03-13

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Legal Events

Date Code Title Description
PL Patent ceased