CH470201A - Verfahren zum Herstellen von Kristallen - Google Patents
Verfahren zum Herstellen von KristallenInfo
- Publication number
- CH470201A CH470201A CH292466A CH292466A CH470201A CH 470201 A CH470201 A CH 470201A CH 292466 A CH292466 A CH 292466A CH 292466 A CH292466 A CH 292466A CH 470201 A CH470201 A CH 470201A
- Authority
- CH
- Switzerland
- Prior art keywords
- making crystals
- crystals
- making
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/44—Gallium phosphide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6502654A NL6502654A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1965-03-03 | 1965-03-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH470201A true CH470201A (de) | 1969-03-31 |
Family
ID=19792545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH292466A CH470201A (de) | 1965-03-03 | 1966-03-01 | Verfahren zum Herstellen von Kristallen |
Country Status (7)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4030964A (en) * | 1976-04-29 | 1977-06-21 | The United States Of America As Represented By The United States Energy Research And Development Administration | Temperature cycling vapor deposition HgI2 crystal growth |
| US4946543A (en) * | 1986-06-02 | 1990-08-07 | Kalisher Murray H | Method and apparatus for growing films on a substrate |
| GB2216639B (en) * | 1988-03-04 | 1991-08-07 | Secretary Trade Ind Brit | Furnace |
| CN114452671A (zh) * | 2022-02-28 | 2022-05-10 | 中国科学院长春应用化学研究所 | 一种温度调整系统及提纯设备 |
-
1965
- 1965-03-03 NL NL6502654A patent/NL6502654A/xx unknown
-
1966
- 1966-02-26 DE DE1519845A patent/DE1519845C3/de not_active Expired
- 1966-02-28 GB GB8673/66A patent/GB1153181A/en not_active Expired
- 1966-02-28 AT AT185066A patent/AT279549B/de not_active IP Right Cessation
- 1966-03-01 CH CH292466A patent/CH470201A/de not_active IP Right Cessation
- 1966-03-02 BE BE677272D patent/BE677272A/xx unknown
-
1968
- 1968-08-06 US US754130A patent/US3591346A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| AT279549B (de) | 1970-03-10 |
| DE1519845C3 (de) | 1975-02-13 |
| BE677272A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-09-02 |
| NL6502654A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-09-05 |
| DE1519845A1 (de) | 1969-03-20 |
| GB1153181A (en) | 1969-05-29 |
| DE1519845B2 (de) | 1974-06-12 |
| US3591346A (en) | 1971-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |