CH454225A - Cellule de mémoire à diode-tunnel - Google Patents

Cellule de mémoire à diode-tunnel

Info

Publication number
CH454225A
CH454225A CH425666A CH425666A CH454225A CH 454225 A CH454225 A CH 454225A CH 425666 A CH425666 A CH 425666A CH 425666 A CH425666 A CH 425666A CH 454225 A CH454225 A CH 454225A
Authority
CH
Switzerland
Prior art keywords
memory cell
tunnel diode
diode memory
tunnel
cell
Prior art date
Application number
CH425666A
Other languages
English (en)
French (fr)
Inventor
Robert Van Zurk
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of CH454225A publication Critical patent/CH454225A/fr

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/33Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
CH425666A 1965-04-02 1966-03-24 Cellule de mémoire à diode-tunnel CH454225A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR11798A FR1441560A (fr) 1965-04-02 1965-04-02 Cellule de mémoire rapide à diode tunnel

Publications (1)

Publication Number Publication Date
CH454225A true CH454225A (fr) 1968-04-15

Family

ID=8575571

Family Applications (1)

Application Number Title Priority Date Filing Date
CH425666A CH454225A (fr) 1965-04-02 1966-03-24 Cellule de mémoire à diode-tunnel

Country Status (8)

Country Link
BE (1) BE678231A (es)
CH (1) CH454225A (es)
DE (1) DE1499611B1 (es)
ES (1) ES324968A1 (es)
FR (1) FR1441560A (es)
GB (1) GB1089805A (es)
LU (1) LU50794A1 (es)
NL (1) NL6604271A (es)

Also Published As

Publication number Publication date
FR1441560A (fr) 1966-06-10
BE678231A (es) 1966-09-01
LU50794A1 (es) 1966-05-31
DE1499611B1 (de) 1970-08-06
NL6604271A (es) 1966-10-03
ES324968A1 (es) 1967-04-01
GB1089805A (en) 1967-11-08

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