CH427046A - Procédé de fabrication d'un dispositif semi-conducteur à effet de champ - Google Patents

Procédé de fabrication d'un dispositif semi-conducteur à effet de champ

Info

Publication number
CH427046A
CH427046A CH680065A CH680065A CH427046A CH 427046 A CH427046 A CH 427046A CH 680065 A CH680065 A CH 680065A CH 680065 A CH680065 A CH 680065A CH 427046 A CH427046 A CH 427046A
Authority
CH
Switzerland
Prior art keywords
manufacturing
field effect
effect device
semiconductor field
semiconductor
Prior art date
Application number
CH680065A
Other languages
English (en)
French (fr)
Inventor
Arnold Lesk Israel
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of CH427046A publication Critical patent/CH427046A/fr

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/051Manufacture or treatment of FETs having PN junction gates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/162Testing steps
CH680065A 1964-05-18 1965-05-14 Procédé de fabrication d'un dispositif semi-conducteur à effet de champ CH427046A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36821264A 1964-05-18 1964-05-18
US65526567A 1967-07-09 1967-07-09

Publications (1)

Publication Number Publication Date
CH427046A true CH427046A (fr) 1966-12-31

Family

ID=27004089

Family Applications (1)

Application Number Title Priority Date Filing Date
CH680065A CH427046A (fr) 1964-05-18 1965-05-14 Procédé de fabrication d'un dispositif semi-conducteur à effet de champ

Country Status (7)

Country Link
US (1) US3578514A (https=)
JP (1) JPS4838989B1 (https=)
CH (1) CH427046A (https=)
DE (1) DE1297762B (https=)
GB (1) GB1053442A (https=)
NL (1) NL6506256A (https=)
SE (1) SE320129B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3760492A (en) * 1969-05-22 1973-09-25 S Middelhoek Procedure for making semiconductor devices of small dimensions
USRE29971E (en) * 1971-07-31 1979-04-17 Zaidan Hojin Hondotai Kenkyn Shinkokai Field effect semiconductor device having an unsaturated triode vacuum tube characteristic
JPS5217720B1 (https=) * 1971-07-31 1977-05-17
JPS49105490A (https=) * 1973-02-07 1974-10-05
JPS524426B2 (https=) * 1973-04-20 1977-02-03
US3947866A (en) * 1973-06-25 1976-03-30 Signetics Corporation Ion implanted resistor having controlled temperature coefficient and method
US3971055A (en) * 1973-06-26 1976-07-20 Sony Corporation Analog memory circuit utilizing a field effect transistor for signal storage
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.
US8399995B2 (en) * 2009-01-16 2013-03-19 Infineon Technologies Ag Semiconductor device including single circuit element for soldering
CN103280409A (zh) * 2013-05-15 2013-09-04 电子科技大学 一种结型场效应晶体管的制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968911C (de) * 1949-06-14 1958-04-10 Licentia Gmbh Elektrisch steuerbarer Trockengleichrichter und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
GB1053442A (https=)
DE1297762B (de) 1969-06-19
US3578514A (en) 1971-05-11
SE320129B (https=) 1970-02-02
JPS4838989B1 (https=) 1973-11-21
NL6506256A (https=) 1965-11-19

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