CH415886A - Verfahren zur Beeinflussung einer elektromagnetischen Strahlung in einer Festkörpervorrichtung - Google Patents

Verfahren zur Beeinflussung einer elektromagnetischen Strahlung in einer Festkörpervorrichtung

Info

Publication number
CH415886A
CH415886A CH1323463A CH1323463A CH415886A CH 415886 A CH415886 A CH 415886A CH 1323463 A CH1323463 A CH 1323463A CH 1323463 A CH1323463 A CH 1323463A CH 415886 A CH415886 A CH 415886A
Authority
CH
Switzerland
Prior art keywords
solid
electromagnetic radiation
state device
influencing electromagnetic
influencing
Prior art date
Application number
CH1323463A
Other languages
English (en)
Inventor
Carter Marinace John
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH415886A publication Critical patent/CH415886A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/17—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169
    • G02F1/178—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169 based on pressure effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
CH1323463A 1962-10-30 1963-10-29 Verfahren zur Beeinflussung einer elektromagnetischen Strahlung in einer Festkörpervorrichtung CH415886A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US234154A US3387230A (en) 1962-10-30 1962-10-30 Stress modulation of recombination radiation in semiconductor devices

Publications (1)

Publication Number Publication Date
CH415886A true CH415886A (de) 1966-06-30

Family

ID=22880175

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1323463A CH415886A (de) 1962-10-30 1963-10-29 Verfahren zur Beeinflussung einer elektromagnetischen Strahlung in einer Festkörpervorrichtung

Country Status (6)

Country Link
US (1) US3387230A (de)
JP (1) JPS4115459B1 (de)
CH (1) CH415886A (de)
GB (1) GB1008743A (de)
NL (1) NL299169A (de)
SE (1) SE315929B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1291029B (de) * 1963-02-21 1969-03-20 Siemens Ag Nach dem Maser- bzw. Laserprinzip arbeitende Anordnung fuer Mikrowellen- bzw. Lichtstrahlung
US3483397A (en) * 1963-10-16 1969-12-09 Westinghouse Electric Corp Apparatus and method for controlling the output of a light emitting semiconductor device
US3482189A (en) * 1964-03-24 1969-12-02 Gen Electric Frequency control of semiconductive junction lasers by application of force
DE1514315A1 (de) * 1965-08-10 1969-04-24 Philips Patentverwaltung Modulationsverfahren und Modulator fuer elektromagnetische Strahlung mittels Doppelbrechung
US3465176A (en) * 1965-12-10 1969-09-02 Matsushita Electric Ind Co Ltd Pressure sensitive bilateral negative resistance device
US3518508A (en) * 1965-12-10 1970-06-30 Matsushita Electric Ind Co Ltd Transducer
US3530400A (en) * 1966-08-30 1970-09-22 Massachusetts Inst Technology Acoustically modulated laser
US3483487A (en) * 1966-12-29 1969-12-09 Bell Telephone Labor Inc Stress modulation of electromagnetic radiation in semiconductors,with wide range of frequency tuning
US3624465A (en) * 1968-06-26 1971-11-30 Rca Corp Heterojunction semiconductor transducer having a region which is piezoelectric
US3562414A (en) * 1969-09-10 1971-02-09 Zenith Radio Corp Solid-state image display device with acoustic scanning of strain-responsive semiconductor
US3792321A (en) * 1971-08-26 1974-02-12 F Seifert Piezoelectric semiconductor devices in which sound energy increases the breakdown voltage and power of capabilities
US4141025A (en) * 1977-03-24 1979-02-20 Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET" Semiconductor structure sensitive to pressure
SE423752B (sv) * 1980-09-29 1982-05-24 Asea Ab Optiskt sensorelement
DE3210086A1 (de) * 1982-03-19 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode, geeignet als drucksensor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE639066A (de) * 1962-10-24 1900-01-01

Also Published As

Publication number Publication date
SE315929B (de) 1969-10-13
GB1008743A (en) 1965-11-03
JPS4115459B1 (de) 1966-08-31
US3387230A (en) 1968-06-04
NL299169A (de)

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