CH410863A - Procédé de production de monocristaux de matériaux réfractaires à haut point de fusion et installation pour la mise en oeuvre de ce procédé - Google Patents
Procédé de production de monocristaux de matériaux réfractaires à haut point de fusion et installation pour la mise en oeuvre de ce procédéInfo
- Publication number
- CH410863A CH410863A CH1522662A CH1522662A CH410863A CH 410863 A CH410863 A CH 410863A CH 1522662 A CH1522662 A CH 1522662A CH 1522662 A CH1522662 A CH 1522662A CH 410863 A CH410863 A CH 410863A
- Authority
- CH
- Switzerland
- Prior art keywords
- electrodes
- sub
- channel
- electrode
- installation
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 24
- 238000009434 installation Methods 0.000 title claims description 16
- 239000013078 crystal Substances 0.000 title claims description 13
- 238000002844 melting Methods 0.000 title claims description 7
- 230000008018 melting Effects 0.000 title claims description 7
- 239000011819 refractory material Substances 0.000 title claims description 6
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000463 material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000000859 sublimation Methods 0.000 claims description 2
- 230000008022 sublimation Effects 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 3
- 230000005611 electricity Effects 0.000 claims 1
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- OOAWCECZEHPMBX-UHFFFAOYSA-N oxygen(2-);uranium(4+) Chemical compound [O-2].[O-2].[U+4] OOAWCECZEHPMBX-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- FCTBKIHDJGHPPO-UHFFFAOYSA-N uranium dioxide Inorganic materials O=[U]=O FCTBKIHDJGHPPO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000994 Tombac Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL273065 | 1961-12-29 | ||
| NL287927 | 1963-01-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH410863A true CH410863A (fr) | 1966-04-15 |
Family
ID=30772298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1522662A CH410863A (fr) | 1961-12-29 | 1962-12-27 | Procédé de production de monocristaux de matériaux réfractaires à haut point de fusion et installation pour la mise en oeuvre de ce procédé |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE641229A (is") |
| CH (1) | CH410863A (is") |
| DE (2) | DE1202758B (is") |
| GB (1) | GB968785A (is") |
| IT (1) | IT712544A (is") |
| LU (1) | LU45075A1 (is") |
| NL (2) | NL273065A (is") |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111394781B (zh) * | 2020-04-06 | 2021-04-16 | 上海应用技术大学 | 一种利用硼酸盐助熔剂生长二氧化铀晶体的方法 |
-
0
- NL NL287927D patent/NL287927A/xx unknown
- IT IT712544D patent/IT712544A/it unknown
- NL NL273065D patent/NL273065A/xx unknown
-
1962
- 1962-12-27 CH CH1522662A patent/CH410863A/fr unknown
- 1962-12-27 DE DE1962C0028782 patent/DE1202758B/de active Pending
- 1962-12-28 GB GB4888662A patent/GB968785A/en not_active Expired
-
1963
- 1963-12-13 BE BE641229A patent/BE641229A/xx unknown
- 1963-12-21 LU LU45075A patent/LU45075A1/xx unknown
-
1964
- 1964-01-15 DE DEE26240A patent/DE1193917B/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL287927A (is") | |
| IT712544A (is") | |
| DE1202758B (de) | 1965-10-14 |
| GB968785A (en) | 1964-09-02 |
| NL273065A (is") | |
| BE641229A (is") | 1964-06-15 |
| DE1193917B (de) | 1965-06-03 |
| LU45075A1 (is") | 1964-04-20 |
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