CH399744A - Verfahren zur Erzeugung eines Einkristalls - Google Patents
Verfahren zur Erzeugung eines EinkristallsInfo
- Publication number
- CH399744A CH399744A CH499961A CH499961A CH399744A CH 399744 A CH399744 A CH 399744A CH 499961 A CH499961 A CH 499961A CH 499961 A CH499961 A CH 499961A CH 399744 A CH399744 A CH 399744A
- Authority
- CH
- Switzerland
- Prior art keywords
- producing
- single crystal
- crystal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Continuous Casting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2593360A | 1960-05-02 | 1960-05-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH399744A true CH399744A (de) | 1965-09-30 |
Family
ID=21828853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH499961A CH399744A (de) | 1960-05-02 | 1961-04-28 | Verfahren zur Erzeugung eines Einkristalls |
Country Status (6)
Country | Link |
---|---|
US (1) | US3124489A (xx) |
CH (1) | CH399744A (xx) |
DK (1) | DK103801C (xx) |
ES (1) | ES267000A1 (xx) |
GB (1) | GB958897A (xx) |
NL (1) | NL264214A (xx) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2254616B2 (de) * | 1971-11-08 | 1974-11-28 | Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) | Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm |
DE2554354A1 (de) * | 1974-12-04 | 1976-06-10 | Metals Research Ltd | Verfahren und vorrichtung zum wachsen von kristallen in form eines duennen streifens |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3194637A (en) * | 1960-06-22 | 1965-07-13 | Westinghouse Electric Corp | Apparatus for the continuous dendritic growth of crystalline material |
US3249404A (en) * | 1963-02-20 | 1966-05-03 | Merck & Co Inc | Continuous growth of crystalline materials |
US3278342A (en) * | 1963-10-14 | 1966-10-11 | Westinghouse Electric Corp | Method of growing crystalline members completely within the solution melt |
US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
US3265469A (en) * | 1964-09-21 | 1966-08-09 | Gen Electric | Crystal growing apparatus |
US3453352A (en) * | 1964-12-14 | 1969-07-01 | Texas Instruments Inc | Method and apparatus for producing crystalline semiconductor ribbon |
US3353914A (en) * | 1964-12-30 | 1967-11-21 | Martin Marietta Corp | Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof |
US3293002A (en) * | 1965-10-19 | 1966-12-20 | Siemens Ag | Process for producing tape-shaped semiconductor bodies |
US3527574A (en) * | 1966-09-27 | 1970-09-08 | Tyco Laboratories Inc | Growth of sapphire filaments |
US3470039A (en) * | 1966-12-21 | 1969-09-30 | Texas Instruments Inc | Continuous junction growth |
US3650703A (en) * | 1967-09-08 | 1972-03-21 | Tyco Laboratories Inc | Method and apparatus for growing inorganic filaments, ribbon from the melt |
US3795488A (en) * | 1971-02-01 | 1974-03-05 | Gen Electric | Method for producing crystal boules with extensive flat, parallel facets |
US3796548A (en) * | 1971-09-13 | 1974-03-12 | Ibm | Boat structure in an apparatus for making semiconductor compound single crystals |
US4157373A (en) * | 1972-04-26 | 1979-06-05 | Rca Corporation | Apparatus for the production of ribbon shaped crystals |
US3954551A (en) * | 1974-07-17 | 1976-05-04 | Texas Instruments Incorporated | Method of pulling silicon ribbon through shaping guide |
US4264385A (en) * | 1974-10-16 | 1981-04-28 | Colin Fisher | Growing of crystals |
DE2508369A1 (de) * | 1975-02-26 | 1976-09-02 | Siemens Ag | Verfahren zum herstellen von scheibenfoermigen siliciumkoerpern, insbesondere fuer solarzellen |
US4784715A (en) * | 1975-07-09 | 1988-11-15 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
DE2633961C2 (de) * | 1975-07-28 | 1986-01-02 | Mitsubishi Kinzoku K.K. | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
JPS5261180A (en) * | 1975-11-14 | 1977-05-20 | Toyo Shirikon Kk | Horizontal growth of crystal ribbons |
US4116641A (en) * | 1976-04-16 | 1978-09-26 | International Business Machines Corporation | Apparatus for pulling crystal ribbons from a truncated wedge shaped die |
US4118197A (en) * | 1977-01-24 | 1978-10-03 | Mobil Tyco Solar Energy Corp. | Cartridge and furnace for crystal growth |
US4216186A (en) * | 1978-08-31 | 1980-08-05 | Nasa | Means for growing ribbon crystals without subjecting the crystals to thermal shock-induced strains |
US4661200A (en) * | 1980-01-07 | 1987-04-28 | Sachs Emanuel M | String stabilized ribbon growth |
US4443411A (en) * | 1980-12-15 | 1984-04-17 | Mobil Solar Energy Corporation | Apparatus for controlling the atmosphere surrounding a crystal growth zone |
US4517048A (en) * | 1983-10-31 | 1985-05-14 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for minimizing convection during crystal growth from solution |
US5394825A (en) * | 1992-02-28 | 1995-03-07 | Crystal Systems, Inc. | Method and apparatus for growing shaped crystals |
US7780782B2 (en) * | 2007-06-08 | 2010-08-24 | Evergreen Solar, Inc. | Method and apparatus for growing a ribbon crystal with localized cooling |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
US2782473A (en) * | 1953-03-20 | 1957-02-26 | Joseph B Brennan | Continuous casting method and apparatus |
US2809136A (en) * | 1954-03-10 | 1957-10-08 | Sylvania Electric Prod | Apparatus and method of preparing crystals of silicon germanium group |
US2889240A (en) * | 1956-03-01 | 1959-06-02 | Rca Corp | Method and apparatus for growing semi-conductive single crystals from a melt |
US2927008A (en) * | 1956-10-29 | 1960-03-01 | Shockley Transistor Corp | Crystal growing apparatus |
NL104388C (xx) * | 1956-11-28 |
-
0
- NL NL264214D patent/NL264214A/xx unknown
- US US3124489D patent/US3124489A/en not_active Expired - Lifetime
-
1961
- 1961-04-06 GB GB12438/61A patent/GB958897A/en not_active Expired
- 1961-04-28 CH CH499961A patent/CH399744A/de unknown
- 1961-04-29 ES ES0267000A patent/ES267000A1/es not_active Expired
- 1961-05-01 DK DK177761AA patent/DK103801C/da active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2254616B2 (de) * | 1971-11-08 | 1974-11-28 | Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) | Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm |
DE2254616C3 (de) * | 1971-11-08 | 1975-07-10 | Tyco Laboratories Inc., Waltham, Mass. (V.St.A.) | Verfahren zum Ziehen eines kristallinen Körpers vorbestimmten Querschnitts aus einem Schmelzfilm |
DE2554354A1 (de) * | 1974-12-04 | 1976-06-10 | Metals Research Ltd | Verfahren und vorrichtung zum wachsen von kristallen in form eines duennen streifens |
Also Published As
Publication number | Publication date |
---|---|
GB958897A (en) | 1964-05-27 |
DK103801C (da) | 1966-02-21 |
ES267000A1 (es) | 1961-07-16 |
US3124489A (en) | 1964-03-10 |
NL264214A (xx) | 1900-01-01 |
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