CH389105A - Procédé de fabrication de corps semi-conducteurs et appareil pour la mise en oeuvre de ce procédé - Google Patents
Procédé de fabrication de corps semi-conducteurs et appareil pour la mise en oeuvre de ce procédéInfo
- Publication number
- CH389105A CH389105A CH1242161A CH1242161A CH389105A CH 389105 A CH389105 A CH 389105A CH 1242161 A CH1242161 A CH 1242161A CH 1242161 A CH1242161 A CH 1242161A CH 389105 A CH389105 A CH 389105A
- Authority
- CH
- Switzerland
- Prior art keywords
- carrying
- manufacturing semiconductor
- semiconductor bodies
- bodies
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US6510060A | 1960-10-26 | 1960-10-26 | |
US86239A US3131098A (en) | 1960-10-26 | 1961-01-31 | Epitaxial deposition on a substrate placed in a socket of the carrier member |
Publications (1)
Publication Number | Publication Date |
---|---|
CH389105A true CH389105A (fr) | 1965-03-15 |
Family
ID=26745202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1242161A CH389105A (fr) | 1960-10-26 | 1961-10-26 | Procédé de fabrication de corps semi-conducteurs et appareil pour la mise en oeuvre de ce procédé |
Country Status (5)
Country | Link |
---|---|
US (1) | US3131098A (fr) |
BE (1) | BE609586A (fr) |
CH (1) | CH389105A (fr) |
GB (1) | GB991370A (fr) |
SE (1) | SE315337B (fr) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE618264A (fr) * | 1959-06-18 | |||
DE1498891A1 (de) * | 1960-12-06 | 1969-02-06 | Siemens Ag | Verfahren zur Bestimmung der Konzentration von aktiven Verunreinigungen in einer zur Darstellung eines halbleitenden Elements geeigneten Verbindung |
NL273009A (fr) * | 1960-12-29 | |||
US3220380A (en) * | 1961-08-21 | 1965-11-30 | Merck & Co Inc | Deposition chamber including heater element enveloped by a quartz workholder |
US3297922A (en) * | 1961-11-02 | 1967-01-10 | Microwave Ass | Semiconductor point contact devices |
DE1464305B2 (de) * | 1962-02-10 | 1970-09-10 | Nippon Electric Co. Ltd., Tokio | Verfahren zum Herstellen von Halbleiterbauelementen sowie nach diesem Verfahren hergestellte Bauelemente |
DE1202616B (de) * | 1962-02-23 | 1965-10-07 | Siemens Ag | Verfahren zum Entfernen der bei der Epitaxie auf dem Heizer abgeschiedenen Halbleiterschicht |
US3319138A (en) * | 1962-11-27 | 1967-05-09 | Texas Instruments Inc | Fast switching high current avalanche transistor |
US3257626A (en) * | 1962-12-31 | 1966-06-21 | Ibm | Semiconductor laser structures |
US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
BE650116A (fr) * | 1963-07-05 | 1900-01-01 | ||
US3304908A (en) * | 1963-08-14 | 1967-02-21 | Merck & Co Inc | Epitaxial reactor including mask-work support |
GB1051562A (fr) * | 1963-11-26 | |||
US3343518A (en) * | 1964-09-30 | 1967-09-26 | Hayes Inc C I | High temperature furnace |
NL6513397A (fr) * | 1964-11-02 | 1966-05-03 | Siemens Ag | |
US3383571A (en) * | 1965-07-19 | 1968-05-14 | Rca Corp | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
US3391270A (en) * | 1965-07-27 | 1968-07-02 | Monsanto Co | Electric resistance heaters |
US3491720A (en) * | 1965-07-29 | 1970-01-27 | Monsanto Co | Epitaxial deposition reactor |
FR1462288A (fr) * | 1965-09-24 | 1966-04-15 | Radiotechnique | Dispositif de détection pour particules |
US3423651A (en) * | 1966-01-13 | 1969-01-21 | Raytheon Co | Microcircuit with complementary dielectrically isolated mesa-type active elements |
US3454434A (en) * | 1966-05-09 | 1969-07-08 | Motorola Inc | Multilayer semiconductor device |
US3460510A (en) * | 1966-05-12 | 1969-08-12 | Dow Corning | Large volume semiconductor coating reactor |
US3462311A (en) * | 1966-05-20 | 1969-08-19 | Globe Union Inc | Semiconductor device having improved resistance to radiation damage |
US3384049A (en) * | 1966-10-27 | 1968-05-21 | Emil R. Capita | Vapor deposition apparatus including centrifugal force substrate-holding means |
US3659552A (en) * | 1966-12-15 | 1972-05-02 | Western Electric Co | Vapor deposition apparatus |
US3399651A (en) * | 1967-05-26 | 1968-09-03 | Philco Ford Corp | Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon |
US3823685A (en) * | 1971-08-05 | 1974-07-16 | Ncr Co | Processing apparatus |
KR101388389B1 (ko) * | 2006-02-10 | 2014-04-22 | 인터몰레큘러 인코퍼레이티드 | 재료, 단위 프로세스 및 프로세스 시퀀스를 조합적으로 변경하는 방법 및 장치 |
US8772772B2 (en) * | 2006-05-18 | 2014-07-08 | Intermolecular, Inc. | System and method for increasing productivity of combinatorial screening |
US8011317B2 (en) * | 2006-12-29 | 2011-09-06 | Intermolecular, Inc. | Advanced mixing system for integrated tool having site-isolated reactors |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2650564A (en) * | 1949-12-02 | 1953-09-01 | Ohio Commw Eng Co | Dynamic pyrolytic plating apparatus |
BE509317A (fr) * | 1951-03-07 | 1900-01-01 | ||
US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
US2785997A (en) * | 1954-03-18 | 1957-03-19 | Ohio Commw Eng Co | Gas plating process |
BE544843A (fr) * | 1955-02-25 | |||
US2895858A (en) * | 1955-06-21 | 1959-07-21 | Hughes Aircraft Co | Method of producing semiconductor crystal bodies |
DE1029941B (de) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung von einkristallinen Halbleiterschichten |
US2989941A (en) * | 1959-02-02 | 1961-06-27 | Hoffman Electronics Corp | Closed diffusion apparatus |
NL259447A (fr) * | 1959-12-31 |
-
1961
- 1961-01-31 US US86239A patent/US3131098A/en not_active Expired - Lifetime
- 1961-10-13 GB GB36860/61A patent/GB991370A/en not_active Expired
- 1961-10-25 BE BE609586A patent/BE609586A/fr unknown
- 1961-10-25 SE SE10613/61A patent/SE315337B/xx unknown
- 1961-10-26 CH CH1242161A patent/CH389105A/fr unknown
Also Published As
Publication number | Publication date |
---|---|
GB991370A (en) | 1965-05-05 |
SE315337B (fr) | 1969-09-29 |
BE609586A (fr) | 1962-04-25 |
US3131098A (en) | 1964-04-28 |
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