CH381328A - Verfahren zur Herstellung eines Diffusionstransistors und nach diesem Verfahren hergestellter Diffusionstransistor - Google Patents

Verfahren zur Herstellung eines Diffusionstransistors und nach diesem Verfahren hergestellter Diffusionstransistor

Info

Publication number
CH381328A
CH381328A CH392260A CH392260A CH381328A CH 381328 A CH381328 A CH 381328A CH 392260 A CH392260 A CH 392260A CH 392260 A CH392260 A CH 392260A CH 381328 A CH381328 A CH 381328A
Authority
CH
Switzerland
Prior art keywords
diffusion transistor
producing
produced according
diffusion
transistor
Prior art date
Application number
CH392260A
Other languages
German (de)
English (en)
Inventor
Anthony Beale Julian Robert
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH381328A publication Critical patent/CH381328A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
CH392260A 1959-04-10 1960-04-07 Verfahren zur Herstellung eines Diffusionstransistors und nach diesem Verfahren hergestellter Diffusionstransistor CH381328A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB12229/59A GB919211A (en) 1959-04-10 1959-04-10 Improvements in and relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
CH381328A true CH381328A (de) 1964-08-31

Family

ID=10000727

Family Applications (1)

Application Number Title Priority Date Filing Date
CH392260A CH381328A (de) 1959-04-10 1960-04-07 Verfahren zur Herstellung eines Diffusionstransistors und nach diesem Verfahren hergestellter Diffusionstransistor

Country Status (5)

Country Link
CH (1) CH381328A (id)
DE (1) DE1118888B (id)
FR (1) FR1253756A (id)
GB (1) GB919211A (id)
NL (1) NL250075A (id)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3292058A (en) * 1963-06-04 1966-12-13 Sperry Rand Corp Thin film controlled emission amplifier
JPS6047725B2 (ja) * 1977-06-14 1985-10-23 ソニー株式会社 フエライトの加工法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2799637A (en) * 1954-12-22 1957-07-16 Philco Corp Method for electrolytic etching
AT194909B (de) * 1955-03-23 1958-01-25 Western Electric Co Verfahren zur Vorbehandlung eines Halbleiterkörpers für eine Halbleitereinrichtung und danach erhaltene Halbleiterkörper

Also Published As

Publication number Publication date
NL250075A (id) 1900-01-01
FR1253756A (fr) 1961-02-10
DE1118888B (de) 1961-12-07
GB919211A (en) 1963-02-20
DE1118888C2 (id) 1962-06-28

Similar Documents

Publication Publication Date Title
CH457331A (de) Bitterstoffgemisch und Verfahren zu dessen Herstellung
CH444810A (de) Verfahren zur Herstellung eines lederartigen Werkstoffes
CH374798A (de) Verfahren zur Herstellung von Formgebilden und nach diesem Verfahren hergestellte Formgebilde
CH362150A (de) Verfahren zur Herstellung von Halbleiterbauelementen und nach diesem Verfahren hergestelltes Halbleiterbauelement
CH368111A (de) Verfahren zur Herstellung eines Reissverschlusses mit Endglied und nach diesem Verfahren hergestellter Reissverschluss
CH431764A (de) Verfahren zur Herstellung metallhaltiger Reaktivfarbstoffe
CH386149A (de) Verfahren zur Herstellung eines Reissverschlusses
CH473585A (de) Verfahren zur Herstellung eines kariostatisch wirkenden Gemisches
CH388884A (de) Verfahren und Einrichtung zur Herstellung gewellter Rohre
CH399629A (de) Verfahren zur Herstellung metallhaltiger Reaktivfarbstoffe
CH383300A (de) Verfahren zur Herstellung eines Rohres und nach diesem hergestelltes Rohr
CH423019A (de) Verfahren zur Herstellung eines umhüllten Supraleiters
CH361914A (de) Verfahren zur Herstellung eines Kunststoffrohres und nach diesem Verfahren hergestelltes Rohr
CH491886A (de) Verfahren zur Herstellung eines Pregnadiens
CH398149A (de) Verfahren zur Herstellung eines Reissverschlusses
CH381142A (de) Verfahren zur Herstellung von Zigarren und nach dem Verfahren hergestellte Zigarre
CH403727A (de) Verfahren zur Herstellung von Monopersulfaten
CH381328A (de) Verfahren zur Herstellung eines Diffusionstransistors und nach diesem Verfahren hergestellter Diffusionstransistor
CH372628A (de) Verfahren zur Herstellung von Vliesstoffen
CH392500A (de) Verfahren zur Herstellung von Dioxysteroiden
CH483205A (de) Verfahren zur Herstellung eines Bindemittels und gemäss diesem Verfahren hergestelltes Bindemittel
CH396872A (de) Verfahren zur Herstellung neuer Harnstoffe
CH379180A (de) Verfahren zur Herstellung eines Reissverschlusses
CH382162A (de) Verfahren zur Herstellung eines kristallisierbaren organometallischen Komplexes
CH421609A (de) Verfahren zur Herstellung eines Ungeziefervertilgungsmittels