CH363095A - Verfahren zum Aufschmelzen von Kontakten auf halbleitende Körper - Google Patents

Verfahren zum Aufschmelzen von Kontakten auf halbleitende Körper

Info

Publication number
CH363095A
CH363095A CH6257858A CH6257858A CH363095A CH 363095 A CH363095 A CH 363095A CH 6257858 A CH6257858 A CH 6257858A CH 6257858 A CH6257858 A CH 6257858A CH 363095 A CH363095 A CH 363095A
Authority
CH
Switzerland
Prior art keywords
semiconducting bodies
melting contacts
semiconducting
melting
bodies
Prior art date
Application number
CH6257858A
Other languages
German (de)
English (en)
Inventor
Pellekaan Leendert
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH363095A publication Critical patent/CH363095A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Contacts (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH6257858A 1957-08-08 1958-08-05 Verfahren zum Aufschmelzen von Kontakten auf halbleitende Körper CH363095A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL219744 1957-08-08

Publications (1)

Publication Number Publication Date
CH363095A true CH363095A (de) 1962-07-15

Family

ID=19750946

Family Applications (1)

Application Number Title Priority Date Filing Date
CH6257858A CH363095A (de) 1957-08-08 1958-08-05 Verfahren zum Aufschmelzen von Kontakten auf halbleitende Körper

Country Status (7)

Country Link
US (1) US2979024A (sv)
BE (1) BE570141A (sv)
CH (1) CH363095A (sv)
DE (1) DE1087705B (sv)
FR (1) FR1201191A (sv)
GB (1) GB884557A (sv)
NL (2) NL219744A (sv)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3105784A (en) * 1960-12-23 1963-10-01 Merck & Co Inc Process of making semiconductors
DE1125084B (de) * 1961-01-31 1962-03-08 Telefunken Patent Verfahren zum Auflegieren von Legierungsmaterial auf einen Halbleiterkoerper
GB1001517A (en) * 1961-09-12 1965-08-18 Mullard Ltd Improvements in and relating to jigs for alloying material to semiconductor bodies
GB1074284A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
US3302612A (en) * 1963-09-12 1967-02-07 Guy R Stutzman Pattern masks and method for making same
US4530861A (en) * 1983-12-19 1985-07-23 General Electric Company Method and apparatus for masking a surface of a blade member
US7946470B2 (en) * 2005-12-30 2011-05-24 Semx Corporation Method for depositing solder material on an electronic component part using separators

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1670700A (en) * 1925-04-28 1928-05-22 Gen Electric Method of electric welding
US2506047A (en) * 1946-12-31 1950-05-02 Sylvania Electric Prod Protective device for use in soldering operations
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
NL88391C (sv) * 1952-08-14
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
DE1153119B (de) * 1955-08-05 1963-08-22 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
US2835615A (en) * 1956-01-23 1958-05-20 Clevite Corp Method of producing a semiconductor alloy junction
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US2858246A (en) * 1957-04-22 1958-10-28 Bell Telephone Labor Inc Silicon single crystal conductor devices

Also Published As

Publication number Publication date
NL108503C (sv)
GB884557A (en) 1961-12-13
US2979024A (en) 1961-04-11
BE570141A (sv)
NL219744A (sv)
FR1201191A (fr) 1959-12-29
DE1087705B (de) 1960-08-25

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