CH363095A - Verfahren zum Aufschmelzen von Kontakten auf halbleitende Körper - Google Patents
Verfahren zum Aufschmelzen von Kontakten auf halbleitende KörperInfo
- Publication number
- CH363095A CH363095A CH6257858A CH6257858A CH363095A CH 363095 A CH363095 A CH 363095A CH 6257858 A CH6257858 A CH 6257858A CH 6257858 A CH6257858 A CH 6257858A CH 363095 A CH363095 A CH 363095A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconducting bodies
- melting contacts
- semiconducting
- melting
- bodies
- Prior art date
Links
- 238000002844 melting Methods 0.000 title 1
- 230000008018 melting Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Contacts (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL219744 | 1957-08-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH363095A true CH363095A (de) | 1962-07-15 |
Family
ID=19750946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH6257858A CH363095A (de) | 1957-08-08 | 1958-08-05 | Verfahren zum Aufschmelzen von Kontakten auf halbleitende Körper |
Country Status (7)
Country | Link |
---|---|
US (1) | US2979024A (sv) |
BE (1) | BE570141A (sv) |
CH (1) | CH363095A (sv) |
DE (1) | DE1087705B (sv) |
FR (1) | FR1201191A (sv) |
GB (1) | GB884557A (sv) |
NL (2) | NL219744A (sv) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3105784A (en) * | 1960-12-23 | 1963-10-01 | Merck & Co Inc | Process of making semiconductors |
DE1125084B (de) * | 1961-01-31 | 1962-03-08 | Telefunken Patent | Verfahren zum Auflegieren von Legierungsmaterial auf einen Halbleiterkoerper |
GB1001517A (en) * | 1961-09-12 | 1965-08-18 | Mullard Ltd | Improvements in and relating to jigs for alloying material to semiconductor bodies |
GB1074284A (en) * | 1963-01-09 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
US3302612A (en) * | 1963-09-12 | 1967-02-07 | Guy R Stutzman | Pattern masks and method for making same |
US4530861A (en) * | 1983-12-19 | 1985-07-23 | General Electric Company | Method and apparatus for masking a surface of a blade member |
US7946470B2 (en) * | 2005-12-30 | 2011-05-24 | Semx Corporation | Method for depositing solder material on an electronic component part using separators |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1670700A (en) * | 1925-04-28 | 1928-05-22 | Gen Electric | Method of electric welding |
US2506047A (en) * | 1946-12-31 | 1950-05-02 | Sylvania Electric Prod | Protective device for use in soldering operations |
US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
NL88391C (sv) * | 1952-08-14 | |||
GB794128A (en) * | 1955-08-04 | 1958-04-30 | Gen Electric Co Ltd | Improvements in or relating to methods of forming a junction in a semiconductor |
DE1153119B (de) * | 1955-08-05 | 1963-08-22 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
US2835615A (en) * | 1956-01-23 | 1958-05-20 | Clevite Corp | Method of producing a semiconductor alloy junction |
US2879188A (en) * | 1956-03-05 | 1959-03-24 | Westinghouse Electric Corp | Processes for making transistors |
US2858246A (en) * | 1957-04-22 | 1958-10-28 | Bell Telephone Labor Inc | Silicon single crystal conductor devices |
-
0
- NL NL108503D patent/NL108503C/xx active
- BE BE570141D patent/BE570141A/xx unknown
- NL NL219744D patent/NL219744A/xx unknown
-
1958
- 1958-08-05 GB GB25039/58A patent/GB884557A/en not_active Expired
- 1958-08-05 CH CH6257858A patent/CH363095A/de unknown
- 1958-08-05 DE DEN15441A patent/DE1087705B/de active Pending
- 1958-08-07 FR FR1201191D patent/FR1201191A/fr not_active Expired
- 1958-08-08 US US754088A patent/US2979024A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
NL108503C (sv) | |
GB884557A (en) | 1961-12-13 |
US2979024A (en) | 1961-04-11 |
BE570141A (sv) | |
NL219744A (sv) | |
FR1201191A (fr) | 1959-12-29 |
DE1087705B (de) | 1960-08-25 |
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