CH339989A - Verfahren zur Herstellung von Selengleichrichtern - Google Patents

Verfahren zur Herstellung von Selengleichrichtern

Info

Publication number
CH339989A
CH339989A CH339989DA CH339989A CH 339989 A CH339989 A CH 339989A CH 339989D A CH339989D A CH 339989DA CH 339989 A CH339989 A CH 339989A
Authority
CH
Switzerland
Prior art keywords
manufacture
selenium rectifiers
rectifiers
selenium
Prior art date
Application number
Other languages
German (de)
English (en)
Inventor
Erich Dipl Ing Nitsche
Hoppe Georg
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH339989A publication Critical patent/CH339989A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01Manufacture or treatment
    • H10D48/04Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/044Conversion of the selenium or tellurium to the conductive state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01Manufacture or treatment
    • H10D48/04Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CH339989D 1954-04-30 1955-04-27 Verfahren zur Herstellung von Selengleichrichtern CH339989A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES38951A DE1105996B (de) 1954-04-30 1954-04-30 Verfahren und Anordnung zur Herstellung von Selengleichrichtern

Publications (1)

Publication Number Publication Date
CH339989A true CH339989A (de) 1959-07-31

Family

ID=7483117

Family Applications (1)

Application Number Title Priority Date Filing Date
CH339989D CH339989A (de) 1954-04-30 1955-04-27 Verfahren zur Herstellung von Selengleichrichtern

Country Status (4)

Country Link
CH (1) CH339989A (en, 2012)
DE (1) DE1105996B (en, 2012)
GB (1) GB793857A (en, 2012)
NL (2) NL196784A (en, 2012)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL49864C (en, 2012) * 1935-06-22
US2349622A (en) * 1941-12-18 1944-05-23 Gen Electric Manufacture of rectifiers of the blocking layer type
DE880367C (de) * 1944-06-05 1953-06-22 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern
FR961847A (en, 2012) * 1946-12-26 1950-05-23
DE820318C (de) * 1948-10-02 1951-11-08 Siemens & Halske A G Selenkoerper, insbesondere fuer Trockengleichrichter, Fotoelemente und lichtempfindliche Widerstandszellen

Also Published As

Publication number Publication date
NL107595C (en, 2012) 1900-01-01
NL196784A (en, 2012) 1900-01-01
GB793857A (en) 1958-04-23
DE1105996B (de) 1961-05-04

Similar Documents

Publication Publication Date Title
CH341071A (de) Verfahren zur Herstellung von Diazooxosulfonamiden
CH384082A (de) Verfahren zur Herstellung von Halbleiteranordnungen
CH342218A (de) Verfahren zur Herstellung von Organohalogenmonosilanen
CH367168A (de) Verfahren zur Herstellung von 17a-Alkyl-19-nortestosteronen
CH330824A (de) Verfahren zur Herstellung von Dioxynitroarylaminoanthrachinonen
CH342754A (de) Verfahren zur Herstellung von Epoxyverbindungen
CH357396A (de) Verfahren zur Herstellung von basisch substituierten 1-Benzyl-tetrahydroisochinolinen
CH333732A (de) Verfahren zur Herstellung von S-Acyl-pantetheinen
CH342572A (de) Verfahren zur Herstellung von Acylamino-amino-anthrachinonen
CH341171A (de) Verfahren zur Herstellung von a-Acylamino-B-amino-nitro-propiophenonen
CH334114A (de) Verfahren zur Herstellung von Selen-Trockengleichrichtern
CH339989A (de) Verfahren zur Herstellung von Selengleichrichtern
CH324874A (de) Verfahren zur Herstellung von Selengleichrichtern
CH346294A (de) Verfahren zur Herstellung von Halbleitergleichrichtern
AT199189B (de) Verfahren zur Herstellung von N-Aminoalkylphenothiazinen
AT188326B (de) Verfahren zur Herstellung von Cycloalkylhydroxylaminen
AT192511B (de) Verfahren zur Herstellung von Selengleichrichtern
CH324873A (de) Verfahren zur Herstellung von Selengleichrichtern
CH316269A (de) Verfahren zur Herstellung von Selengleichrichtern
CH317671A (de) Verfahren zur Herstellung von Selengleichrichtern
AT188803B (de) Verfahren zur Herstellung von Selentrockengleichrichtern
AT191899B (de) Verfahren zur Herstellung von N1-heterocyclisch substituierten p-Aminobenzolsulfonamiden
AT198897B (de) Verfahren zur Herstellung von 14-Oxydihydromorphinon
AT196872B (de) Verfahren zur Herstellung von Aminoacylaniliden
AT190055B (de) Verfahren zur Herstellung von 2-Amino-5-imino-pyrroleninen