CH256718A - Kristalldetektor. - Google Patents

Kristalldetektor.

Info

Publication number
CH256718A
CH256718A CH256718DA CH256718A CH 256718 A CH256718 A CH 256718A CH 256718D A CH256718D A CH 256718DA CH 256718 A CH256718 A CH 256718A
Authority
CH
Switzerland
Prior art keywords
crystal detector
detector
crystal
Prior art date
Application number
Other languages
English (en)
Inventor
Aktiengesellschaft C Lorenz
Original Assignee
Lorenz C Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lorenz C Ag filed Critical Lorenz C Ag
Publication of CH256718A publication Critical patent/CH256718A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
CH256718D 1943-04-05 1944-02-22 Kristalldetektor. CH256718A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE256718X 1943-04-05

Publications (1)

Publication Number Publication Date
CH256718A true CH256718A (de) 1948-08-31

Family

ID=5966370

Family Applications (1)

Application Number Title Priority Date Filing Date
CH256718D CH256718A (de) 1943-04-05 1944-02-22 Kristalldetektor.

Country Status (3)

Country Link
BE (1) BE454977A (de)
CH (1) CH256718A (de)
FR (1) FR902142A (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE924997C (de) * 1948-10-01 1955-03-10 Siemens Ag Richtleiter
DE1033783B (de) * 1953-12-12 1958-07-10 Philips Nv Elektrodensystem mit mindestens einem halbleitenden Koerper, insbesondere Kristalldiode oder Transistor
DE1043515B (de) * 1953-10-01 1958-11-13 Siemens Ag Verfahren zur Herstellung einer in einem mit Vergussmasse ausgefuellten, vakuumdichtabgeschlossenen Gehaeuse untergebrachten Halbleiteranordnung
DE976378C (de) * 1953-12-24 1963-08-14 Siemens Ag Verfahren zum Verschliessen von Gehaeusen fuer elektrische Halbleiteranordnungen mittels Erwaermung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE924997C (de) * 1948-10-01 1955-03-10 Siemens Ag Richtleiter
DE1043515B (de) * 1953-10-01 1958-11-13 Siemens Ag Verfahren zur Herstellung einer in einem mit Vergussmasse ausgefuellten, vakuumdichtabgeschlossenen Gehaeuse untergebrachten Halbleiteranordnung
DE1033783B (de) * 1953-12-12 1958-07-10 Philips Nv Elektrodensystem mit mindestens einem halbleitenden Koerper, insbesondere Kristalldiode oder Transistor
DE976378C (de) * 1953-12-24 1963-08-14 Siemens Ag Verfahren zum Verschliessen von Gehaeusen fuer elektrische Halbleiteranordnungen mittels Erwaermung

Also Published As

Publication number Publication date
FR902142A (fr) 1945-08-20
BE454977A (de)

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