CH203236A - Elektrodensystem mit unsymmetrischer Leitfähigkeit. - Google Patents

Elektrodensystem mit unsymmetrischer Leitfähigkeit.

Info

Publication number
CH203236A
CH203236A CH203236DA CH203236A CH 203236 A CH203236 A CH 203236A CH 203236D A CH203236D A CH 203236DA CH 203236 A CH203236 A CH 203236A
Authority
CH
Switzerland
Prior art keywords
electrode system
asymmetrical conductivity
asymmetrical
conductivity
electrode
Prior art date
Application number
Other languages
German (de)
English (en)
Inventor
Gloeilampenfabrieken N Philips
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH203236A publication Critical patent/CH203236A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/045—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/046—Provision of discrete insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Hybrid Cells (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Photoreceptors In Electrophotography (AREA)
CH203236D 1936-08-13 1937-08-11 Elektrodensystem mit unsymmetrischer Leitfähigkeit. CH203236A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEP2083D DE1079209B (de) 1936-08-13 1936-08-13 Elektrodensystem mit unsymmetrischer Leitfaehigkeit und Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
CH203236A true CH203236A (de) 1939-02-28

Family

ID=25989691

Family Applications (1)

Application Number Title Priority Date Filing Date
CH203236D CH203236A (de) 1936-08-13 1937-08-11 Elektrodensystem mit unsymmetrischer Leitfähigkeit.

Country Status (7)

Country Link
US (1) US2162613A (en:Method)
BE (1) BE423105A (en:Method)
CH (1) CH203236A (en:Method)
DE (1) DE1079209B (en:Method)
FR (1) FR826933A (en:Method)
GB (1) GB486829A (en:Method)
NL (2) NL52391C (en:Method)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE742935C (de) * 1939-07-01 1943-12-15 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
DE841174C (de) * 1948-10-02 1952-06-13 Siemens Ag Halbleiteranordnung
DE946075C (de) * 1945-03-29 1956-07-26 Siemens Ag Sperrschicht-Trockengleichrichter
DE961365C (de) * 1941-12-13 1957-04-04 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
DE975018C (de) * 1952-07-17 1961-07-06 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL57010C (en:Method) * 1941-05-01
US2462157A (en) * 1943-11-10 1949-02-22 Westinghouse Electric Corp Method of eliminating porosity in crystalline selenium films
BE464100A (en:Method) * 1944-04-06 1900-01-01
US2462949A (en) * 1944-05-24 1949-03-01 Hartford Nat Bank & Trust Co Method of treating selenium
GB598589A (en) * 1944-11-02 1948-02-23 Standard Telephones Cables Ltd Improvements in or relating to the manufacture of selenium rectifiers
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
US2872358A (en) * 1952-06-04 1959-02-03 Fansteel Metallurgical Corp Method of forming a blocking layer on a selenium rectifier
US2872357A (en) * 1952-06-04 1959-02-03 Fansteel Metallurgical Corp Method of forming a blocking layer on a selenium rectifier

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE742935C (de) * 1939-07-01 1943-12-15 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
DE961365C (de) * 1941-12-13 1957-04-04 Siemens Ag Elektrischer Halbleiter aus Selen, insbesondere fuer Trockengleichrichter
DE946075C (de) * 1945-03-29 1956-07-26 Siemens Ag Sperrschicht-Trockengleichrichter
DE841174C (de) * 1948-10-02 1952-06-13 Siemens Ag Halbleiteranordnung
DE975018C (de) * 1952-07-17 1961-07-06 Siemens Ag Verfahren zur Herstellung von Selengleichrichtern

Also Published As

Publication number Publication date
FR826933A (fr) 1938-04-13
US2162613A (en) 1939-06-13
NL52391C (en:Method) 1900-01-01
DE1079209B (de) 1960-04-07
BE423105A (en:Method) 1900-01-01
GB486829A (en) 1938-06-10
NL83633B (en:Method) 1900-01-01

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