CH203236A - Electrode system with asymmetrical conductivity. - Google Patents

Electrode system with asymmetrical conductivity.

Info

Publication number
CH203236A
CH203236A CH203236DA CH203236A CH 203236 A CH203236 A CH 203236A CH 203236D A CH203236D A CH 203236DA CH 203236 A CH203236 A CH 203236A
Authority
CH
Switzerland
Prior art keywords
electrode system
asymmetrical conductivity
asymmetrical
conductivity
electrode
Prior art date
Application number
Other languages
German (de)
Inventor
Gloeilampenfabrieken N Philips
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH203236A publication Critical patent/CH203236A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/105—Treatment of the surface of the selenium or tellurium layer after having been made conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Hybrid Cells (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Battery Electrode And Active Subsutance (AREA)
CH203236D 1936-08-13 1937-08-11 Electrode system with asymmetrical conductivity. CH203236A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEP2083D DE1079209B (en) 1936-08-13 1936-08-13 Electrode system with asymmetrical conductivity and process for its production

Publications (1)

Publication Number Publication Date
CH203236A true CH203236A (en) 1939-02-28

Family

ID=25989691

Family Applications (1)

Application Number Title Priority Date Filing Date
CH203236D CH203236A (en) 1936-08-13 1937-08-11 Electrode system with asymmetrical conductivity.

Country Status (7)

Country Link
US (1) US2162613A (en)
BE (1) BE423105A (en)
CH (1) CH203236A (en)
DE (1) DE1079209B (en)
FR (1) FR826933A (en)
GB (1) GB486829A (en)
NL (2) NL52391C (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE742935C (en) * 1939-07-01 1943-12-15 Siemens Ag Electrical semiconductor made from selenium, especially for dry rectifiers
DE841174C (en) * 1948-10-02 1952-06-13 Siemens Ag Semiconductor device
DE946075C (en) * 1945-03-29 1956-07-26 Siemens Ag Dry barrier rectifier
DE961365C (en) * 1941-12-13 1957-04-04 Siemens Ag Electrical semiconductor made from selenium, especially for dry rectifiers
DE975018C (en) * 1952-07-17 1961-07-06 Siemens Ag Process for the manufacture of selenium rectifiers

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL57010C (en) * 1941-05-01
US2462157A (en) * 1943-11-10 1949-02-22 Westinghouse Electric Corp Method of eliminating porosity in crystalline selenium films
NL116213B (en) * 1944-04-06 1900-01-01
US2462949A (en) * 1944-05-24 1949-03-01 Hartford Nat Bank & Trust Co Method of treating selenium
GB600053A (en) * 1944-11-02 1948-03-30 Standard Telephones Cables Ltd Improvements in or relating to selenium rectifiers
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
US2514879A (en) * 1945-07-13 1950-07-11 Purdue Research Foundation Alloys and rectifiers made thereof
US2872357A (en) * 1952-06-04 1959-02-03 Fansteel Metallurgical Corp Method of forming a blocking layer on a selenium rectifier
US2872358A (en) * 1952-06-04 1959-02-03 Fansteel Metallurgical Corp Method of forming a blocking layer on a selenium rectifier

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE742935C (en) * 1939-07-01 1943-12-15 Siemens Ag Electrical semiconductor made from selenium, especially for dry rectifiers
DE961365C (en) * 1941-12-13 1957-04-04 Siemens Ag Electrical semiconductor made from selenium, especially for dry rectifiers
DE946075C (en) * 1945-03-29 1956-07-26 Siemens Ag Dry barrier rectifier
DE841174C (en) * 1948-10-02 1952-06-13 Siemens Ag Semiconductor device
DE975018C (en) * 1952-07-17 1961-07-06 Siemens Ag Process for the manufacture of selenium rectifiers

Also Published As

Publication number Publication date
GB486829A (en) 1938-06-10
NL83633B (en) 1900-01-01
DE1079209B (en) 1960-04-07
US2162613A (en) 1939-06-13
BE423105A (en) 1900-01-01
NL52391C (en) 1900-01-01
FR826933A (en) 1938-04-13

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