CA997870A - Semiconductor device and method of manufacturing the device - Google Patents

Semiconductor device and method of manufacturing the device

Info

Publication number
CA997870A
CA997870A CA191,410A CA191410A CA997870A CA 997870 A CA997870 A CA 997870A CA 191410 A CA191410 A CA 191410A CA 997870 A CA997870 A CA 997870A
Authority
CA
Canada
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA191,410A
Other languages
English (en)
Inventor
Maurice Bonis
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA997870A publication Critical patent/CA997870A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • H01L21/8228Complementary devices, e.g. complementary transistors
    • H01L21/82285Complementary vertical transistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/05Etch and refill
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CA191,410A 1973-02-02 1974-01-31 Semiconductor device and method of manufacturing the device Expired CA997870A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7303748A FR2216678B1 (pt) 1973-02-02 1973-02-02

Publications (1)

Publication Number Publication Date
CA997870A true CA997870A (en) 1976-09-28

Family

ID=9114241

Family Applications (1)

Application Number Title Priority Date Filing Date
CA191,410A Expired CA997870A (en) 1973-02-02 1974-01-31 Semiconductor device and method of manufacturing the device

Country Status (10)

Country Link
US (1) US3959039A (pt)
JP (1) JPS5433837B2 (pt)
BR (1) BR7400752D0 (pt)
CA (1) CA997870A (pt)
DE (1) DE2403816C3 (pt)
ES (1) ES422816A1 (pt)
FR (1) FR2216678B1 (pt)
GB (1) GB1450626A (pt)
IT (1) IT1009603B (pt)
NL (1) NL162249C (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2297495A1 (fr) * 1975-01-10 1976-08-06 Radiotechnique Compelec Structure de transistors complementaires et son procede de fabrication
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
JPS567473A (en) * 1979-06-29 1981-01-26 Mitsubishi Electric Corp Semiconductor switching device
JPS6081660U (ja) * 1983-11-10 1985-06-06 富士電機株式会社 ダ−リントントランジスタ
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
EP2555235B1 (en) 2011-08-02 2014-06-18 Nxp B.V. Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328652A (en) * 1964-07-20 1967-06-27 Gen Electric Voltage comparator
GB1075387A (en) * 1964-07-27 1967-07-12 Gen Electric Improvements in semicuoductor device making
FR1448776A (fr) * 1964-11-19 1966-03-18 Radiotechnique Perfectionnements aux agencements semi-conducteurs comportant plusieurs éléments à fonction définie solidaires d'un support unique
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US3411052A (en) * 1965-10-28 1968-11-12 Ncr Co Logical circuit arrangement having a constant current gain for controlled operation i saturation
US3404450A (en) * 1966-01-26 1968-10-08 Westinghouse Electric Corp Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation
US3434022A (en) * 1967-01-27 1969-03-18 Motorola Inc Semiconductor controlled rectifier device
US3524113A (en) * 1967-06-15 1970-08-11 Ibm Complementary pnp-npn transistors and fabrication method therefor

Also Published As

Publication number Publication date
FR2216678A1 (pt) 1974-08-30
FR2216678B1 (pt) 1977-08-19
GB1450626A (en) 1976-09-22
NL7401100A (pt) 1974-08-06
NL162249C (nl) 1980-04-15
NL162249B (nl) 1979-11-15
BR7400752D0 (pt) 1974-11-05
JPS49107680A (pt) 1974-10-12
JPS5433837B2 (pt) 1979-10-23
DE2403816A1 (de) 1974-08-15
US3959039A (en) 1976-05-25
DE2403816B2 (de) 1979-02-22
DE2403816C3 (de) 1979-10-25
IT1009603B (it) 1976-12-20
ES422816A1 (es) 1976-05-01

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