CA985603A - Method of making a single crystal intermetallic compound semiconductor - Google Patents

Method of making a single crystal intermetallic compound semiconductor

Info

Publication number
CA985603A
CA985603A CA170,965A CA170965A CA985603A CA 985603 A CA985603 A CA 985603A CA 170965 A CA170965 A CA 170965A CA 985603 A CA985603 A CA 985603A
Authority
CA
Canada
Prior art keywords
making
single crystal
compound semiconductor
intermetallic compound
crystal intermetallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA170,965A
Other languages
English (en)
Other versions
CA170965S (en
Inventor
Masaaki Ayabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of CA985603A publication Critical patent/CA985603A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA170,965A 1972-05-11 1973-05-10 Method of making a single crystal intermetallic compound semiconductor Expired CA985603A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47046629A JPS5148152B2 (xx) 1972-05-11 1972-05-11

Publications (1)

Publication Number Publication Date
CA985603A true CA985603A (en) 1976-03-16

Family

ID=12752572

Family Applications (1)

Application Number Title Priority Date Filing Date
CA170,965A Expired CA985603A (en) 1972-05-11 1973-05-10 Method of making a single crystal intermetallic compound semiconductor

Country Status (5)

Country Link
US (1) US3966881A (xx)
JP (1) JPS5148152B2 (xx)
CA (1) CA985603A (xx)
DE (1) DE2323211A1 (xx)
GB (1) GB1430480A (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2300616A1 (fr) * 1975-02-12 1976-09-10 Radiotechnique Compelec Procede de synthese de composes semi-conducteurs
DE2538946C3 (de) * 1975-09-02 1979-09-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren und Vorrichtung zum Herstellen eines Einkristalls
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
US4521272A (en) * 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
JP3648703B2 (ja) * 2000-01-07 2005-05-18 株式会社日鉱マテリアルズ 化合物半導体単結晶の製造方法
TW201241249A (en) * 2011-04-12 2012-10-16 Dingten Ind Inc Single crystal growth method for vertical high temperature and high pressure group III-V compound
JP6061276B2 (ja) * 2014-08-29 2017-01-18 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 金属層間のはんだ接合の形成方法
CN107868981B (zh) * 2016-09-28 2020-09-29 清华大学 一种金属铂的半金属化合物及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2985519A (en) * 1958-06-02 1961-05-23 Du Pont Production of silicon
US3694166A (en) * 1967-05-22 1972-09-26 Hughes Aircraft Co Crystal growth tube
US3582287A (en) * 1968-01-09 1971-06-01 Emil R Capita Seed pulling apparatus having diagonal feed and gas doping
JPS4820106B1 (xx) * 1968-03-08 1973-06-19
US3642443A (en) * 1968-08-19 1972-02-15 Ibm Group iii{14 v semiconductor twinned crystals and their preparation by solution growth
US3628998A (en) * 1969-09-23 1971-12-21 Ibm Method for growth of a mixed crystal with controlled composition
US3771970A (en) * 1970-02-02 1973-11-13 Tyco Laboratories Inc Method of producing cadmium telluride crystals

Also Published As

Publication number Publication date
JPS499183A (xx) 1974-01-26
DE2323211A1 (de) 1973-11-22
JPS5148152B2 (xx) 1976-12-18
GB1430480A (en) 1976-03-31
US3966881A (en) 1976-06-29

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