CA981793A - Two-terminal nondestructive read jfet-npn transistor semiconductor memory - Google Patents
Two-terminal nondestructive read jfet-npn transistor semiconductor memoryInfo
- Publication number
- CA981793A CA981793A CA159,350A CA159350A CA981793A CA 981793 A CA981793 A CA 981793A CA 159350 A CA159350 A CA 159350A CA 981793 A CA981793 A CA 981793A
- Authority
- CA
- Canada
- Prior art keywords
- jfet
- terminal
- semiconductor memory
- npn transistor
- transistor semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26141772A | 1972-06-09 | 1972-06-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA981793A true CA981793A (en) | 1976-01-13 |
Family
ID=22993213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA159,350A Expired CA981793A (en) | 1972-06-09 | 1972-12-19 | Two-terminal nondestructive read jfet-npn transistor semiconductor memory |
Country Status (12)
Country | Link |
---|---|
US (1) | US3753248A (xx) |
JP (1) | JPS4963350A (xx) |
KR (1) | KR780000459B1 (xx) |
BE (1) | BE800605A (xx) |
CA (1) | CA981793A (xx) |
DE (1) | DE2328471A1 (xx) |
FR (1) | FR2188238B1 (xx) |
GB (1) | GB1429846A (xx) |
HK (1) | HK45877A (xx) |
IT (1) | IT984672B (xx) |
NL (1) | NL7308042A (xx) |
SE (1) | SE382515B (xx) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2348984A1 (de) * | 1973-09-28 | 1975-04-24 | Siemens Ag | Anordnung mit feldeffekttransistoren |
US3916222A (en) * | 1974-05-28 | 1975-10-28 | Nat Semiconductor Corp | Field effect transistor switching circuit |
JPS5185062A (ja) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | Yunibaasarukatsupuringu |
US4030083A (en) * | 1975-04-04 | 1977-06-14 | Bell Telephone Laboratories, Incorporated | Self-refreshed capacitor memory cell |
EP0225366A1 (en) * | 1985-06-07 | 1987-06-16 | Anamartic Limited | Electrical data storage elements |
JP2783579B2 (ja) * | 1989-03-01 | 1998-08-06 | 株式会社東芝 | 半導体装置 |
US5365477A (en) * | 1992-06-16 | 1994-11-15 | The United States Of America As Represented By The Secretary Of The Navy | Dynamic random access memory device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3394356A (en) * | 1965-04-19 | 1968-07-23 | Ibm | Random access memories employing threshold type devices |
US3450967A (en) * | 1966-09-07 | 1969-06-17 | Vitautas Balio Tolutis | Selenium memory cell containing silver up to 2 atomic percent adjacent the rectifying contact |
-
1972
- 1972-06-09 US US00261417A patent/US3753248A/en not_active Expired - Lifetime
- 1972-12-19 CA CA159,350A patent/CA981793A/en not_active Expired
-
1973
- 1973-05-28 SE SE7307541A patent/SE382515B/xx unknown
- 1973-06-02 KR KR7300891A patent/KR780000459B1/ko active
- 1973-06-05 DE DE2328471A patent/DE2328471A1/de active Pending
- 1973-06-07 BE BE132004A patent/BE800605A/xx unknown
- 1973-06-07 GB GB2718173A patent/GB1429846A/en not_active Expired
- 1973-06-08 JP JP48064010A patent/JPS4963350A/ja active Pending
- 1973-06-08 NL NL7308042A patent/NL7308042A/xx not_active Application Discontinuation
- 1973-06-08 FR FR7321033A patent/FR2188238B1/fr not_active Expired
- 1973-06-11 IT IT1014/73A patent/IT984672B/it active
-
1977
- 1977-09-08 HK HK458/77A patent/HK45877A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE2328471A1 (de) | 1973-12-20 |
GB1429846A (en) | 1976-03-31 |
FR2188238B1 (xx) | 1976-09-17 |
JPS4963350A (xx) | 1974-06-19 |
KR780000459B1 (en) | 1978-10-23 |
IT984672B (it) | 1974-11-20 |
HK45877A (en) | 1977-09-16 |
FR2188238A1 (xx) | 1974-01-18 |
SE382515B (sv) | 1976-02-02 |
US3753248A (en) | 1973-08-14 |
BE800605A (fr) | 1973-10-01 |
NL7308042A (xx) | 1973-12-11 |
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