CA976265A - Photoelectric transducer element - Google Patents

Photoelectric transducer element

Info

Publication number
CA976265A
CA976265A CA155,987A CA155987A CA976265A CA 976265 A CA976265 A CA 976265A CA 155987 A CA155987 A CA 155987A CA 976265 A CA976265 A CA 976265A
Authority
CA
Canada
Prior art keywords
transducer element
photoelectric transducer
photoelectric
transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA155,987A
Other languages
English (en)
Other versions
CA155987S (en
Inventor
Masakazu Fukai
Osamaru Eguchi
Yukimasa Kuramoto
Shinji Fujiwara
Hiroyuki Serizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP46089622A external-priority patent/JPS5037513B2/ja
Priority claimed from JP47003265A external-priority patent/JPS5120242B2/ja
Priority claimed from JP47096428A external-priority patent/JPS524404B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of CA976265A publication Critical patent/CA976265A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
CA155,987A 1971-11-09 1972-11-08 Photoelectric transducer element Expired CA976265A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP46089622A JPS5037513B2 (it) 1971-11-09 1971-11-09
JP47003265A JPS5120242B2 (it) 1971-12-29 1971-12-29
JP47096428A JPS524404B2 (it) 1972-09-25 1972-09-25

Publications (1)

Publication Number Publication Date
CA976265A true CA976265A (en) 1975-10-14

Family

ID=27275729

Family Applications (1)

Application Number Title Priority Date Filing Date
CA155,987A Expired CA976265A (en) 1971-11-09 1972-11-08 Photoelectric transducer element

Country Status (9)

Country Link
US (1) US3858074A (it)
AU (1) AU444944B2 (it)
BE (1) BE791077A (it)
CA (1) CA976265A (it)
DE (1) DE2254605C3 (it)
FR (1) FR2159364B1 (it)
GB (1) GB1393914A (it)
IT (1) IT984638B (it)
NL (1) NL159237B (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985918A (en) * 1972-10-12 1976-10-12 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a target for an image pickup tube
GB1449956A (en) * 1973-03-30 1976-09-15 Matsushita Electric Ind Co Ltd Photoconductor element
DE2436990A1 (de) * 1974-08-01 1976-02-12 Bosch Gmbh Robert Fotoleitertarget fuer fernsehaufnahmeroehren mit sperrenden kontakten
US4589192A (en) * 1984-11-02 1986-05-20 The United States Of America As Represented By The Secretary Of The Army Hybrid epitaxial growth process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252729A (it) * 1959-06-18
US3287611A (en) * 1961-08-17 1966-11-22 Gen Motors Corp Controlled conducting region geometry in semiconductor devices
US3268764A (en) * 1963-01-09 1966-08-23 Westinghouse Electric Corp Radiation sensitive device
US3405298A (en) * 1965-03-04 1968-10-08 Rca Corp Photoconductive device having a target including a selenium blocking layer
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials
US3571646A (en) * 1967-07-17 1971-03-23 Tokyo Shibaura Electric Co Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride
JPS5027326B1 (it) * 1970-04-22 1975-09-06

Also Published As

Publication number Publication date
AU444944B2 (en) 1974-02-07
BE791077A (fr) 1973-03-01
IT984638B (it) 1974-11-20
US3858074A (en) 1974-12-31
DE2254605A1 (de) 1973-05-24
GB1393914A (en) 1975-05-14
NL7215094A (it) 1973-05-11
AU4859272A (en) 1974-02-07
NL159237B (nl) 1979-01-15
DE2254605B2 (de) 1981-06-19
FR2159364A1 (it) 1973-06-22
FR2159364B1 (it) 1977-07-29
DE2254605C3 (de) 1982-04-15

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