CA974633A - Methods of producing gallium phosphide light emitting diodes - Google Patents

Methods of producing gallium phosphide light emitting diodes

Info

Publication number
CA974633A
CA974633A CA150,761A CA150761A CA974633A CA 974633 A CA974633 A CA 974633A CA 150761 A CA150761 A CA 150761A CA 974633 A CA974633 A CA 974633A
Authority
CA
Canada
Prior art keywords
methods
light emitting
emitting diodes
gallium phosphide
producing gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA150,761A
Other languages
English (en)
Other versions
CA150761S (en
Inventor
Peter B. Hart
Ralph Nicklin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Handel und Investments AG
Original Assignee
Plessey Handel und Investments AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Handel und Investments AG filed Critical Plessey Handel und Investments AG
Application granted granted Critical
Publication of CA974633A publication Critical patent/CA974633A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Device Packages (AREA)
CA150,761A 1971-09-10 1972-09-01 Methods of producing gallium phosphide light emitting diodes Expired CA974633A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4229171 1971-09-10

Publications (1)

Publication Number Publication Date
CA974633A true CA974633A (en) 1975-09-16

Family

ID=10423781

Family Applications (1)

Application Number Title Priority Date Filing Date
CA150,761A Expired CA974633A (en) 1971-09-10 1972-09-01 Methods of producing gallium phosphide light emitting diodes

Country Status (6)

Country Link
JP (1) JPS5745068B2 (de)
CA (1) CA974633A (de)
DE (1) DE2243524A1 (de)
FR (1) FR2152751B1 (de)
GB (1) GB1353954A (de)
IT (1) IT967326B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52147992A (en) * 1976-06-02 1977-12-08 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0666270B2 (ja) * 1985-09-16 1994-08-24 アメリカン テレフオン アンド テレグラフ カムパニ− リンを含む半導体デバイスの製造方法
JPH01245569A (ja) * 1988-03-28 1989-09-29 Toshiba Corp ＧａＰ緑色発光素子とその製造方法
CN116121867B (zh) * 2023-02-01 2023-08-15 有研国晶辉新材料有限公司 一种光学级磷化镓单晶的制备方法

Also Published As

Publication number Publication date
IT967326B (it) 1974-02-28
FR2152751A1 (de) 1973-04-27
JPS4838692A (de) 1973-06-07
GB1353954A (en) 1974-05-22
FR2152751B1 (de) 1978-01-06
JPS5745068B2 (de) 1982-09-25
DE2243524A1 (de) 1973-03-15

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Legal Events

Date Code Title Description
MKEX Expiry

Effective date: 19920916