CA973975A - Mesa semiconductor device formed by etch removal of material between two metal layers - Google Patents

Mesa semiconductor device formed by etch removal of material between two metal layers

Info

Publication number
CA973975A
CA973975A CA153,085A CA153085A CA973975A CA 973975 A CA973975 A CA 973975A CA 153085 A CA153085 A CA 153085A CA 973975 A CA973975 A CA 973975A
Authority
CA
Canada
Prior art keywords
semiconductor device
metal layers
device formed
etch removal
mesa semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA153,085A
Other languages
English (en)
Other versions
CA153085S (en
Inventor
Hendrikus G. Kock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA973975A publication Critical patent/CA973975A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
CA153,085A 1971-10-07 1972-10-03 Mesa semiconductor device formed by etch removal of material between two metal layers Expired CA973975A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7113746A NL7113746A (https=) 1971-10-07 1971-10-07

Publications (1)

Publication Number Publication Date
CA973975A true CA973975A (en) 1975-09-02

Family

ID=19814192

Family Applications (1)

Application Number Title Priority Date Filing Date
CA153,085A Expired CA973975A (en) 1971-10-07 1972-10-03 Mesa semiconductor device formed by etch removal of material between two metal layers

Country Status (9)

Country Link
JP (1) JPS5323990B2 (https=)
AU (1) AU4728572A (https=)
CA (1) CA973975A (https=)
CH (1) CH549870A (https=)
DE (1) DE2248089A1 (https=)
FR (1) FR2156123B1 (https=)
GB (1) GB1403239A (https=)
IT (1) IT975162B (https=)
NL (1) NL7113746A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039473A (https=) * 1973-08-10 1975-04-11
FR2420208A1 (fr) * 1978-03-17 1979-10-12 Thomson Csf Procede de realisation collective d'une source d'ondes millimetriques de type preaccorde et source ainsi realisee
DE2824027C2 (de) * 1978-06-01 1985-03-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterbauelement und Verfahren zu seiner Herstellung
DE102022004377A1 (de) * 2022-11-23 2024-05-23 Azur Space Solar Power Gmbh Diodenanordnung
WO2025046878A1 (en) * 2023-08-31 2025-03-06 Nippon Telegraph And Telephone Corporation Reconfigurable intelligent surface module and method of manufacturing thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1333007A (fr) * 1962-02-16 1963-07-19 Intermetall Procédé de fabrication de transistors à haute fréquence et transistors conformesà ceux ainsi obtenus
US3509428A (en) * 1967-10-18 1970-04-28 Hughes Aircraft Co Ion-implanted impatt diode

Also Published As

Publication number Publication date
DE2248089A1 (de) 1973-04-12
FR2156123A1 (https=) 1973-05-25
NL7113746A (https=) 1973-04-10
FR2156123B1 (https=) 1977-12-23
IT975162B (it) 1974-07-20
AU4728572A (en) 1974-04-11
JPS5323990B2 (https=) 1978-07-18
CH549870A (de) 1974-05-31
JPS4846272A (https=) 1973-07-02
GB1403239A (en) 1975-08-28

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