CA973975A - Mesa semiconductor device formed by etch removal of material between two metal layers - Google Patents

Mesa semiconductor device formed by etch removal of material between two metal layers

Info

Publication number
CA973975A
CA973975A CA153,085A CA153085A CA973975A CA 973975 A CA973975 A CA 973975A CA 153085 A CA153085 A CA 153085A CA 973975 A CA973975 A CA 973975A
Authority
CA
Canada
Prior art keywords
semiconductor device
metal layers
device formed
etch removal
mesa semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA153,085A
Other versions
CA153085S (en
Inventor
Hendrikus G. Kock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA973975A publication Critical patent/CA973975A/en
Expired legal-status Critical Current

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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
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    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Wire Bonding (AREA)
  • Drying Of Semiconductors (AREA)
CA153,085A 1971-10-07 1972-10-03 Mesa semiconductor device formed by etch removal of material between two metal layers Expired CA973975A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7113746A NL7113746A (en) 1971-10-07 1971-10-07

Publications (1)

Publication Number Publication Date
CA973975A true CA973975A (en) 1975-09-02

Family

ID=19814192

Family Applications (1)

Application Number Title Priority Date Filing Date
CA153,085A Expired CA973975A (en) 1971-10-07 1972-10-03 Mesa semiconductor device formed by etch removal of material between two metal layers

Country Status (9)

Country Link
JP (1) JPS5323990B2 (en)
AU (1) AU4728572A (en)
CA (1) CA973975A (en)
CH (1) CH549870A (en)
DE (1) DE2248089A1 (en)
FR (1) FR2156123B1 (en)
GB (1) GB1403239A (en)
IT (1) IT975162B (en)
NL (1) NL7113746A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5039473A (en) * 1973-08-10 1975-04-11
FR2420208A1 (en) * 1978-03-17 1979-10-12 Thomson Csf PROCESS FOR COLLECTIVE REALIZATION OF A SOURCE OF MILLIMETRIC WAVES OF PRE-ACCORDED TYPE AND SOURCE THUS REALIZED
DE2824027C2 (en) * 1978-06-01 1985-03-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Semiconductor component and method for its manufacture
DE102022004377A1 (en) 2022-11-23 2024-05-23 Azur Space Solar Power Gmbh Diode arrangement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1333007A (en) * 1962-02-16 1963-07-19 Intermetall Method of manufacturing high frequency transistors and transistors conforming to those thus obtained
US3510734A (en) * 1967-10-18 1970-05-05 Hughes Aircraft Co Impatt diode

Also Published As

Publication number Publication date
DE2248089A1 (en) 1973-04-12
IT975162B (en) 1974-07-20
NL7113746A (en) 1973-04-10
GB1403239A (en) 1975-08-28
JPS4846272A (en) 1973-07-02
JPS5323990B2 (en) 1978-07-18
FR2156123A1 (en) 1973-05-25
CH549870A (en) 1974-05-31
AU4728572A (en) 1974-04-11
FR2156123B1 (en) 1977-12-23

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