CA973975A - Mesa semiconductor device formed by etch removal of material between two metal layers - Google Patents
Mesa semiconductor device formed by etch removal of material between two metal layersInfo
- Publication number
- CA973975A CA973975A CA153,085A CA153085A CA973975A CA 973975 A CA973975 A CA 973975A CA 153085 A CA153085 A CA 153085A CA 973975 A CA973975 A CA 973975A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor device
- metal layers
- device formed
- etch removal
- mesa semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Wire Bonding (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7113746A NL7113746A (en) | 1971-10-07 | 1971-10-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA973975A true CA973975A (en) | 1975-09-02 |
Family
ID=19814192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA153,085A Expired CA973975A (en) | 1971-10-07 | 1972-10-03 | Mesa semiconductor device formed by etch removal of material between two metal layers |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5323990B2 (en) |
AU (1) | AU4728572A (en) |
CA (1) | CA973975A (en) |
CH (1) | CH549870A (en) |
DE (1) | DE2248089A1 (en) |
FR (1) | FR2156123B1 (en) |
GB (1) | GB1403239A (en) |
IT (1) | IT975162B (en) |
NL (1) | NL7113746A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5039473A (en) * | 1973-08-10 | 1975-04-11 | ||
FR2420208A1 (en) * | 1978-03-17 | 1979-10-12 | Thomson Csf | PROCESS FOR COLLECTIVE REALIZATION OF A SOURCE OF MILLIMETRIC WAVES OF PRE-ACCORDED TYPE AND SOURCE THUS REALIZED |
DE2824027C2 (en) * | 1978-06-01 | 1985-03-28 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Semiconductor component and method for its manufacture |
DE102022004377A1 (en) | 2022-11-23 | 2024-05-23 | Azur Space Solar Power Gmbh | Diode arrangement |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1333007A (en) * | 1962-02-16 | 1963-07-19 | Intermetall | Method of manufacturing high frequency transistors and transistors conforming to those thus obtained |
US3510734A (en) * | 1967-10-18 | 1970-05-05 | Hughes Aircraft Co | Impatt diode |
-
1971
- 1971-10-07 NL NL7113746A patent/NL7113746A/xx unknown
-
1972
- 1972-09-30 DE DE19722248089 patent/DE2248089A1/en not_active Ceased
- 1972-10-03 AU AU47285/72A patent/AU4728572A/en not_active Expired
- 1972-10-03 CA CA153,085A patent/CA973975A/en not_active Expired
- 1972-10-04 JP JP9914272A patent/JPS5323990B2/ja not_active Expired
- 1972-10-04 IT IT70125/72A patent/IT975162B/en active
- 1972-10-04 CH CH1450672A patent/CH549870A/en not_active IP Right Cessation
- 1972-10-04 GB GB4574772A patent/GB1403239A/en not_active Expired
- 1972-10-06 FR FR7235503A patent/FR2156123B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2248089A1 (en) | 1973-04-12 |
IT975162B (en) | 1974-07-20 |
NL7113746A (en) | 1973-04-10 |
GB1403239A (en) | 1975-08-28 |
JPS4846272A (en) | 1973-07-02 |
JPS5323990B2 (en) | 1978-07-18 |
FR2156123A1 (en) | 1973-05-25 |
CH549870A (en) | 1974-05-31 |
AU4728572A (en) | 1974-04-11 |
FR2156123B1 (en) | 1977-12-23 |
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