CA972076A - Bidirectional thyristor having high gate sensitivity - Google Patents

Bidirectional thyristor having high gate sensitivity

Info

Publication number
CA972076A
CA972076A CA150,009A CA150009A CA972076A CA 972076 A CA972076 A CA 972076A CA 150009 A CA150009 A CA 150009A CA 972076 A CA972076 A CA 972076A
Authority
CA
Canada
Prior art keywords
bidirectional thyristor
high gate
gate sensitivity
sensitivity
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA150,009A
Other languages
English (en)
Other versions
CA150009S (en
Inventor
Frederick P. Jones
John M.S. Neilson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA972076A publication Critical patent/CA972076A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747Bidirectional devices, e.g. triacs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Prostheses (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
CA150,009A 1971-10-22 1972-08-22 Bidirectional thyristor having high gate sensitivity Expired CA972076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19164371A 1971-10-22 1971-10-22

Publications (1)

Publication Number Publication Date
CA972076A true CA972076A (en) 1975-07-29

Family

ID=22706315

Family Applications (1)

Application Number Title Priority Date Filing Date
CA150,009A Expired CA972076A (en) 1971-10-22 1972-08-22 Bidirectional thyristor having high gate sensitivity

Country Status (8)

Country Link
JP (1) JPS4851592A (xx)
BE (1) BE790415A (xx)
CA (1) CA972076A (xx)
DE (1) DE2251251A1 (xx)
FR (1) FR2156819B1 (xx)
GB (1) GB1399644A (xx)
IT (1) IT964378B (xx)
NL (1) NL7214234A (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2336802A1 (fr) * 1975-12-24 1977-07-22 Silec Semi Conducteurs Nouvelle structure de triac
FR2359508A1 (fr) * 1976-07-19 1978-02-17 Silec Semi Conducteurs Nouvelle structure de diodes glassivees et son procede de fabrication
US5036377A (en) * 1988-08-03 1991-07-30 Texas Instruments Incorporated Triac array

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3468729A (en) * 1966-03-21 1969-09-23 Westinghouse Electric Corp Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity

Also Published As

Publication number Publication date
NL7214234A (xx) 1973-04-25
DE2251251A1 (de) 1973-04-26
JPS4851592A (xx) 1973-07-19
IT964378B (it) 1974-01-21
FR2156819B1 (xx) 1977-12-30
BE790415A (fr) 1973-02-15
FR2156819A1 (xx) 1973-06-01
GB1399644A (en) 1975-07-02

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