CA970830A - Method and apparatus for measuring the parameters of a transistor or other two-port device at microwave frequencies - Google Patents
Method and apparatus for measuring the parameters of a transistor or other two-port device at microwave frequenciesInfo
- Publication number
- CA970830A CA970830A CA159,877A CA159877A CA970830A CA 970830 A CA970830 A CA 970830A CA 159877 A CA159877 A CA 159877A CA 970830 A CA970830 A CA 970830A
- Authority
- CA
- Canada
- Prior art keywords
- transistor
- parameters
- measuring
- port device
- microwave frequencies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21413271A | 1971-12-30 | 1971-12-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA970830A true CA970830A (en) | 1975-07-08 |
Family
ID=22797908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA159,877A Expired CA970830A (en) | 1971-12-30 | 1972-12-27 | Method and apparatus for measuring the parameters of a transistor or other two-port device at microwave frequencies |
Country Status (6)
Country | Link |
---|---|
US (1) | US3789301A (bg) |
JP (1) | JPS5214147B2 (bg) |
CA (1) | CA970830A (bg) |
DE (1) | DE2262053C3 (bg) |
FR (1) | FR2166227B1 (bg) |
GB (1) | GB1404159A (bg) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4359682A (en) * | 1980-07-14 | 1982-11-16 | Hewlett-Packard Company | Method and apparatus for testing the output reflection coefficient of an automatic level controlled source |
US4621226A (en) * | 1984-05-23 | 1986-11-04 | Weinschel Engineering Co., Inc. | Apparatus and method for determining an input electrical characteristic of a device under test |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5251875A (en) * | 1975-10-23 | 1977-04-26 | Nec Corp | Method and apparatus for measuring characteristics of super high frequ ency transistors |
US4088950A (en) * | 1977-01-31 | 1978-05-09 | Gte Sylvania Incorporated | Immittance monitoring apparatus |
US4069453A (en) * | 1977-02-23 | 1978-01-17 | Tektronix, Inc. | Transistor test fixture |
US4321527A (en) * | 1979-09-17 | 1982-03-23 | Ford Aerospace & Communications Corp. | Apparatus and method for individually testing combined active elements |
JPS5784864U (bg) * | 1980-11-14 | 1982-05-25 | ||
US4808913A (en) * | 1988-03-31 | 1989-02-28 | Wiltron Company | Asymmetrical coupling circuit |
FR2629597B1 (fr) * | 1988-04-01 | 1990-12-07 | Thomson Csf | Dispositif et procede de mesure thermique d'un transistor bipolaire en fonctionnement |
JPH0324843U (bg) * | 1989-07-19 | 1991-03-14 | ||
US5170126A (en) * | 1991-05-14 | 1992-12-08 | Hughes Aircraft Company | Microwave six-port noise parameter analyzer |
US6600307B2 (en) | 2000-03-02 | 2003-07-29 | Sarnoff Corporation | Method and apparatus for measuring true transmitted power using a broadband dual directional coupler |
US6642737B2 (en) * | 2001-10-15 | 2003-11-04 | Texas Instruments Incorporated | Method of generating transistor ac scattering parameters simultaneously with dc characteristics using a single circuit simulation with a self-correction scheme for the artificial dc voltage dropped across the 50-ohm resistor representing transmission line impedance |
DE60207261T2 (de) * | 2002-10-30 | 2006-06-01 | Agilent Technologies, Inc., Palo Alto | Bereitstellung einer kontrollierbaren Impedanz an einer Referenzebene in einer Schaltung |
TW200716999A (en) * | 2005-06-16 | 2007-05-01 | Agilent Technologies Inc | Method for measuring FET characteristics |
US7282926B1 (en) | 2006-06-05 | 2007-10-16 | Jan Verspecht | Method and an apparatus for characterizing a high-frequency device-under-test in a large signal impedance tuning environment |
US11029351B1 (en) * | 2018-08-20 | 2021-06-08 | Christos Tsironis | Transforming load pull test fixture for wave measurements |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3025463A (en) * | 1957-11-22 | 1962-03-13 | Eino J Luoma | Apparatus for measurement of complex reflection coefficient |
US3054948A (en) * | 1959-05-26 | 1962-09-18 | Ibm | High frequency measurements |
US3211999A (en) * | 1960-04-27 | 1965-10-12 | Western Electric Co | Method and apparatus for measuring semiconductor volume resistivity by transmission loss in a resonant cavity |
US3622883A (en) * | 1965-08-18 | 1971-11-23 | Ibm | Pulsed current transistor beta tester having feedback to maintain emitter to collector current constant |
US3500204A (en) * | 1966-10-13 | 1970-03-10 | Scm Corp | Equivalent circuit determination by pulse reflectometry with compensation for particular impedances |
FR1547291A (fr) * | 1967-12-19 | 1968-11-22 | Funwerk Dresden Veb | Procédé et dispositif pour l'indication directe ou le tracé d'une courbe de lieu de l'un quelconque des paramètres y, z, h, a, s, t ou d'autres paramètres de quadripôles, par exemple de transistors, à des fréquences élevées |
US3668522A (en) * | 1968-12-09 | 1972-06-06 | Ibm | Method and apparatus for characterizing test elements on the basis of rise-time degradation |
-
1971
- 1971-12-30 US US00214132A patent/US3789301A/en not_active Expired - Lifetime
-
1972
- 1972-12-12 GB GB5723972A patent/GB1404159A/en not_active Expired
- 1972-12-13 JP JP47124463A patent/JPS5214147B2/ja not_active Expired
- 1972-12-19 DE DE2262053A patent/DE2262053C3/de not_active Expired
- 1972-12-21 FR FR7247119A patent/FR2166227B1/fr not_active Expired
- 1972-12-27 CA CA159,877A patent/CA970830A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4359682A (en) * | 1980-07-14 | 1982-11-16 | Hewlett-Packard Company | Method and apparatus for testing the output reflection coefficient of an automatic level controlled source |
US4621226A (en) * | 1984-05-23 | 1986-11-04 | Weinschel Engineering Co., Inc. | Apparatus and method for determining an input electrical characteristic of a device under test |
Also Published As
Publication number | Publication date |
---|---|
DE2262053A1 (de) | 1973-07-05 |
US3789301A (en) | 1974-01-29 |
GB1404159A (en) | 1975-08-28 |
JPS4881481A (bg) | 1973-10-31 |
FR2166227B1 (bg) | 1974-08-02 |
JPS5214147B2 (bg) | 1977-04-19 |
FR2166227A1 (bg) | 1973-08-10 |
DE2262053C3 (de) | 1982-01-14 |
DE2262053B2 (de) | 1981-04-09 |
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