CA966229A - Single-phase charge-coupled semiconductor device - Google Patents

Single-phase charge-coupled semiconductor device

Info

Publication number
CA966229A
CA966229A CA156033356-16*AA CA156033A CA966229A CA 966229 A CA966229 A CA 966229A CA 156033 A CA156033 A CA 156033A CA 966229 A CA966229 A CA 966229A
Authority
CA
Canada
Prior art keywords
semiconductor device
phase charge
coupled semiconductor
coupled
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA156033356-16*AA
Other languages
English (en)
Other versions
CA156033S (en
Inventor
Patrick C. Arnett
Charles H. Stapper (Jr.)
Lawrence G. Heller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA966229A publication Critical patent/CA966229A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
CA156033356-16*AA 1971-11-10 1972-11-08 Single-phase charge-coupled semiconductor device Expired CA966229A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19733971A 1971-11-10 1971-11-10

Publications (1)

Publication Number Publication Date
CA966229A true CA966229A (en) 1975-04-15

Family

ID=22729000

Family Applications (1)

Application Number Title Priority Date Filing Date
CA156033356-16*AA Expired CA966229A (en) 1971-11-10 1972-11-08 Single-phase charge-coupled semiconductor device

Country Status (8)

Country Link
US (1) US3796933A (xx)
JP (1) JPS5146584B2 (xx)
CA (1) CA966229A (xx)
DE (1) DE2250140C2 (xx)
FR (1) FR2159280B1 (xx)
GB (1) GB1383977A (xx)
IT (1) IT967897B (xx)
NL (1) NL7215003A (xx)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7406728A (nl) * 1974-05-20 1975-11-24 Philips Nv Halfgeleiderinrichting voor het digitaliseren van een elektrisch analoog signaal.
US4047215A (en) * 1975-01-31 1977-09-06 Texas Instruments Incorporated Uniphase charge coupled devices
GB1551935A (en) * 1976-08-19 1979-09-05 Philips Nv Imaging devices
GB1559312A (en) * 1976-08-26 1980-01-16 Philips Nv Photosensitive device arrangements and systems and photosensitive elements therefor
JPS53158488U (xx) * 1977-05-14 1978-12-12
US4348690A (en) * 1981-04-30 1982-09-07 Rca Corporation Semiconductor imagers
US4396438A (en) * 1981-08-31 1983-08-02 Rca Corporation Method of making CCD imagers
US4814844A (en) * 1986-12-12 1989-03-21 The United States Of America As Represented By The Secretary Of The Air Force Split two-phase CCD clocking gate apparatus

Also Published As

Publication number Publication date
FR2159280B1 (xx) 1974-08-19
IT967897B (it) 1974-03-11
GB1383977A (en) 1974-02-12
JPS5146584B2 (xx) 1976-12-09
DE2250140A1 (de) 1973-05-17
DE2250140C2 (de) 1983-01-20
FR2159280A1 (xx) 1973-06-22
US3796933A (en) 1974-03-12
JPS4868178A (xx) 1973-09-17
NL7215003A (xx) 1973-05-14

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