CA961174A - Gold tantalum-nitrogen high conductivity metallurgy - Google Patents
Gold tantalum-nitrogen high conductivity metallurgyInfo
- Publication number
- CA961174A CA961174A CA141,027A CA141027A CA961174A CA 961174 A CA961174 A CA 961174A CA 141027 A CA141027 A CA 141027A CA 961174 A CA961174 A CA 961174A
- Authority
- CA
- Canada
- Prior art keywords
- metallurgy
- high conductivity
- nitrogen high
- gold tantalum
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
- H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12389—All metal or with adjacent metals having variation in thickness
- Y10T428/12396—Discontinuous surface component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12576—Boride, carbide or nitride component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12611—Oxide-containing component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12889—Au-base component
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14089171A | 1971-05-06 | 1971-05-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA961174A true CA961174A (en) | 1975-01-14 |
Family
ID=22493259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA141,027A Expired CA961174A (en) | 1971-05-06 | 1972-05-02 | Gold tantalum-nitrogen high conductivity metallurgy |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3701931A (env) |
| JP (1) | JPS5622146B1 (env) |
| CA (1) | CA961174A (env) |
| DE (1) | DE2217737B2 (env) |
| FR (1) | FR2135152B1 (env) |
| GB (1) | GB1319558A (env) |
| IT (1) | IT947886B (env) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3877063A (en) * | 1973-06-27 | 1975-04-08 | Hewlett Packard Co | Metallization structure and process for semiconductor devices |
| US3886580A (en) * | 1973-10-09 | 1975-05-27 | Cutler Hammer Inc | Tantalum-gallium arsenide schottky barrier semiconductor device |
| FR2402304A1 (fr) * | 1977-08-31 | 1979-03-30 | Int Computers Ltd | Procede de connexion electrique d'une pastille de circuit integre |
| CH648692A5 (en) * | 1979-09-05 | 1985-03-29 | Bbc Brown Boveri & Cie | Contact arrangement on a semiconductor component |
| EP0035118B1 (en) * | 1980-02-28 | 1985-11-21 | Kabushiki Kaisha Toshiba | Iii - v group compound semiconductor light-emitting element and method of producing the same |
| DE3206421A1 (de) * | 1982-02-23 | 1983-09-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von schichten aus hochschmelzenden metallen bzw. metallverbindungen durch abscheidung aus der dampfphase |
| US4405849A (en) * | 1982-03-08 | 1983-09-20 | W. H. Brady Co. | Switching contact |
| US4459321A (en) * | 1982-12-30 | 1984-07-10 | International Business Machines Corporation | Process for applying closely overlapped mutually protective barrier films |
| GB2164491B (en) * | 1984-09-14 | 1988-04-07 | Stc Plc | Semiconductor devices |
| JPS62259469A (ja) * | 1986-05-06 | 1987-11-11 | Hitachi Ltd | 半導体装置 |
| US4857418A (en) * | 1986-12-08 | 1989-08-15 | Honeywell Inc. | Resistive overlayer for magnetic films |
| US5019461A (en) * | 1986-12-08 | 1991-05-28 | Honeywell Inc. | Resistive overlayer for thin film devices |
| US4754431A (en) * | 1987-01-28 | 1988-06-28 | Honeywell Inc. | Vialess shorting bars for magnetoresistive devices |
| GB2213839B (en) * | 1987-12-23 | 1992-06-17 | Plessey Co Plc | Semiconducting thin films |
| GB2213838A (en) * | 1987-12-23 | 1989-08-23 | Plessey Co Plc | Environmental protection of superconducting thin films |
| US4918655A (en) * | 1988-02-29 | 1990-04-17 | Honeywell Inc. | Magnetic device integrated circuit interconnection system |
| DE69032893T2 (de) * | 1989-11-30 | 1999-07-22 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Werkstoff für elektrische Leiter, Elektronikagerät welches diesen verwendet und Flüssig-Kristall-Anzeige |
| US5136362A (en) * | 1990-11-27 | 1992-08-04 | Grief Malcolm K | Electrical contact with diffusion barrier |
| US5528081A (en) * | 1993-06-25 | 1996-06-18 | Hall; John H. | High temperature refractory metal contact in silicon integrated circuits |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA791343A (en) * | 1968-07-30 | International Business Machines Corporation | Ohmic contact | |
| DE1508345A1 (de) * | 1966-07-19 | 1969-10-30 | Siemens Ag | Lot zum Kontaktieren eines Koerpers aus einer Germanium-Silizium-Legierung und Verfahren zu seiner Herstellung |
-
1971
- 1971-05-06 US US140891A patent/US3701931A/en not_active Expired - Lifetime
-
1972
- 1972-02-25 IT IT21015/72A patent/IT947886B/it active
- 1972-03-24 JP JP2906972A patent/JPS5622146B1/ja active Pending
- 1972-03-27 GB GB1422472A patent/GB1319558A/en not_active Expired
- 1972-03-28 FR FR7211405A patent/FR2135152B1/fr not_active Expired
- 1972-04-13 DE DE2217737A patent/DE2217737B2/de not_active Withdrawn
- 1972-05-02 CA CA141,027A patent/CA961174A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2217737B2 (de) | 1979-10-04 |
| DE2217737A1 (de) | 1972-11-16 |
| GB1319558A (en) | 1973-06-06 |
| US3701931A (en) | 1972-10-31 |
| FR2135152A1 (env) | 1972-12-15 |
| IT947886B (it) | 1973-05-30 |
| FR2135152B1 (env) | 1976-06-11 |
| JPS5622146B1 (env) | 1981-05-23 |
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