CA961174A - Gold tantalum-nitrogen high conductivity metallurgy - Google Patents

Gold tantalum-nitrogen high conductivity metallurgy

Info

Publication number
CA961174A
CA961174A CA141,027A CA141027A CA961174A CA 961174 A CA961174 A CA 961174A CA 141027 A CA141027 A CA 141027A CA 961174 A CA961174 A CA 961174A
Authority
CA
Canada
Prior art keywords
metallurgy
high conductivity
nitrogen high
gold tantalum
tantalum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA141,027A
Other languages
English (en)
Other versions
CA141027S (en
Inventor
Martin Revitz
James M. Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA961174A publication Critical patent/CA961174A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12389—All metal or with adjacent metals having variation in thickness
    • Y10T428/12396—Discontinuous surface component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
CA141,027A 1971-05-06 1972-05-02 Gold tantalum-nitrogen high conductivity metallurgy Expired CA961174A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14089171A 1971-05-06 1971-05-06

Publications (1)

Publication Number Publication Date
CA961174A true CA961174A (en) 1975-01-14

Family

ID=22493259

Family Applications (1)

Application Number Title Priority Date Filing Date
CA141,027A Expired CA961174A (en) 1971-05-06 1972-05-02 Gold tantalum-nitrogen high conductivity metallurgy

Country Status (7)

Country Link
US (1) US3701931A (de)
JP (1) JPS5622146B1 (de)
CA (1) CA961174A (de)
DE (1) DE2217737B2 (de)
FR (1) FR2135152B1 (de)
GB (1) GB1319558A (de)
IT (1) IT947886B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3877063A (en) * 1973-06-27 1975-04-08 Hewlett Packard Co Metallization structure and process for semiconductor devices
US3886580A (en) * 1973-10-09 1975-05-27 Cutler Hammer Inc Tantalum-gallium arsenide schottky barrier semiconductor device
FR2402304A1 (fr) * 1977-08-31 1979-03-30 Int Computers Ltd Procede de connexion electrique d'une pastille de circuit integre
CH648692A5 (en) * 1979-09-05 1985-03-29 Bbc Brown Boveri & Cie Contact arrangement on a semiconductor component
DE3172935D1 (en) * 1980-02-28 1986-01-02 Toshiba Kk Iii - v group compound semiconductor light-emitting element and method of producing the same
DE3206421A1 (de) * 1982-02-23 1983-09-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von schichten aus hochschmelzenden metallen bzw. metallverbindungen durch abscheidung aus der dampfphase
US4405849A (en) * 1982-03-08 1983-09-20 W. H. Brady Co. Switching contact
US4459321A (en) * 1982-12-30 1984-07-10 International Business Machines Corporation Process for applying closely overlapped mutually protective barrier films
GB2164491B (en) * 1984-09-14 1988-04-07 Stc Plc Semiconductor devices
JPS62259469A (ja) * 1986-05-06 1987-11-11 Hitachi Ltd 半導体装置
US4857418A (en) * 1986-12-08 1989-08-15 Honeywell Inc. Resistive overlayer for magnetic films
US5019461A (en) * 1986-12-08 1991-05-28 Honeywell Inc. Resistive overlayer for thin film devices
US4754431A (en) * 1987-01-28 1988-06-28 Honeywell Inc. Vialess shorting bars for magnetoresistive devices
GB2213839B (en) * 1987-12-23 1992-06-17 Plessey Co Plc Semiconducting thin films
GB2213838A (en) * 1987-12-23 1989-08-23 Plessey Co Plc Environmental protection of superconducting thin films
US4918655A (en) * 1988-02-29 1990-04-17 Honeywell Inc. Magnetic device integrated circuit interconnection system
DE69032893T2 (de) * 1989-11-30 1999-07-22 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Werkstoff für elektrische Leiter, Elektronikagerät welches diesen verwendet und Flüssig-Kristall-Anzeige
US5136362A (en) * 1990-11-27 1992-08-04 Grief Malcolm K Electrical contact with diffusion barrier
US5528081A (en) * 1993-06-25 1996-06-18 Hall; John H. High temperature refractory metal contact in silicon integrated circuits

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA791343A (en) * 1968-07-30 International Business Machines Corporation Ohmic contact
DE1508345A1 (de) * 1966-07-19 1969-10-30 Siemens Ag Lot zum Kontaktieren eines Koerpers aus einer Germanium-Silizium-Legierung und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
IT947886B (it) 1973-05-30
GB1319558A (en) 1973-06-06
FR2135152B1 (de) 1976-06-11
DE2217737B2 (de) 1979-10-04
US3701931A (en) 1972-10-31
JPS5622146B1 (de) 1981-05-23
FR2135152A1 (de) 1972-12-15
DE2217737A1 (de) 1972-11-16

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