CA960551A - Method of depositing crystalline semiconductor material - Google Patents

Method of depositing crystalline semiconductor material

Info

Publication number
CA960551A
CA960551A CA123,971A CA123971A CA960551A CA 960551 A CA960551 A CA 960551A CA 123971 A CA123971 A CA 123971A CA 960551 A CA960551 A CA 960551A
Authority
CA
Canada
Prior art keywords
semiconductor material
crystalline semiconductor
depositing crystalline
depositing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA123,971A
Other languages
English (en)
Other versions
CA123971S (fr
Inventor
Konrad Reuschel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA960551A publication Critical patent/CA960551A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
CA123,971A 1970-09-30 1971-09-29 Method of depositing crystalline semiconductor material Expired CA960551A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702048155 DE2048155A1 (de) 1970-09-30 1970-09-30 Anordnung zum Abscheiden von kri stallinem Halbleitermaterial

Publications (1)

Publication Number Publication Date
CA960551A true CA960551A (en) 1975-01-07

Family

ID=5783855

Family Applications (1)

Application Number Title Priority Date Filing Date
CA123,971A Expired CA960551A (en) 1970-09-30 1971-09-29 Method of depositing crystalline semiconductor material

Country Status (12)

Country Link
JP (1) JPS531204B1 (xx)
AT (1) AT321992B (xx)
BE (1) BE764761A (xx)
CA (1) CA960551A (xx)
CH (1) CH561081A5 (xx)
CS (1) CS166293B2 (xx)
DE (1) DE2048155A1 (xx)
FR (1) FR2108381A5 (xx)
GB (1) GB1332583A (xx)
NL (1) NL7108122A (xx)
SE (1) SE363978B (xx)
SU (1) SU493954A3 (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI545298B (zh) * 2010-06-04 2016-08-11 Shinetsu Chemical Co Heat treatment furnace

Also Published As

Publication number Publication date
NL7108122A (xx) 1972-04-05
DE2048155A1 (de) 1972-04-06
CH561081A5 (xx) 1975-04-30
GB1332583A (en) 1973-10-03
SE363978B (xx) 1974-02-11
SU493954A3 (ru) 1975-11-28
CS166293B2 (xx) 1976-02-27
JPS531204B1 (xx) 1978-01-17
FR2108381A5 (xx) 1972-05-19
AT321992B (de) 1975-04-25
BE764761A (fr) 1971-08-16

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