CA949856A - Method of manufacturing whisker crystalline inorganic carbides - Google Patents

Method of manufacturing whisker crystalline inorganic carbides

Info

Publication number
CA949856A
CA949856A CA102,019A CA102019A CA949856A CA 949856 A CA949856 A CA 949856A CA 102019 A CA102019 A CA 102019A CA 949856 A CA949856 A CA 949856A
Authority
CA
Canada
Prior art keywords
crystalline inorganic
inorganic carbides
manufacturing
whisker crystalline
manufacturing whisker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA102,019A
Other versions
CA102019S (en
Inventor
Hidetsugu Habata
Isao Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Spinning Co Ltd
Original Assignee
Kanegafuchi Spinning Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Spinning Co Ltd filed Critical Kanegafuchi Spinning Co Ltd
Application granted granted Critical
Publication of CA949856A publication Critical patent/CA949856A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/36Carbides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005Growth of whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/10Solid density
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/32Thermal properties
    • C01P2006/33Phase transition temperatures
    • C01P2006/34Melting temperatures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/90Other properties not specified above

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
CA102,019A 1970-01-23 1971-01-05 Method of manufacturing whisker crystalline inorganic carbides Expired CA949856A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45006139A JPS5033040B1 (en) 1970-01-23 1970-01-23

Publications (1)

Publication Number Publication Date
CA949856A true CA949856A (en) 1974-06-25

Family

ID=11630160

Family Applications (1)

Application Number Title Priority Date Filing Date
CA102,019A Expired CA949856A (en) 1970-01-23 1971-01-05 Method of manufacturing whisker crystalline inorganic carbides

Country Status (8)

Country Link
JP (1) JPS5033040B1 (en)
CA (1) CA949856A (en)
CH (1) CH576284A5 (en)
DE (1) DE2101891B2 (en)
FR (1) FR2075819A5 (en)
GB (1) GB1319330A (en)
NL (1) NL144236B (en)
SE (1) SE374085B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52101039A (en) * 1976-02-20 1977-08-24 West Electric Co Flash camera
CN114032607B (en) * 2021-11-02 2024-01-09 西北工业大学 Method for preparing zirconium carbide whisker by adopting zirconium carbide seed crystal

Also Published As

Publication number Publication date
DE2101891A1 (en) 1971-08-05
SE374085B (en) 1975-02-24
GB1319330A (en) 1973-06-06
NL7100366A (en) 1971-07-27
NL144236B (en) 1974-12-16
DE2101891B2 (en) 1973-11-29
FR2075819A5 (en) 1971-10-08
CH576284A5 (en) 1976-06-15
JPS5033040B1 (en) 1975-10-27

Similar Documents

Publication Publication Date Title
CA955834A (en) Process of manufacturing whisker crystalline silicon carbide
CA952803A (en) Laminar structures of crystalline copolyketones
CA952798A (en) Method of manufacturing semiconductor single crystals
CA949856A (en) Method of manufacturing whisker crystalline inorganic carbides
CA983871A (en) Method for the production of aminopenicillins
CA839148A (en) Method of producing shot-shells
CA960551A (en) Method of depositing crystalline semiconductor material
AU455490B2 (en) A method of manufacturing whisker crystalline inorganic carbides
AU2431871A (en) A method of manufacturing whisker crystalline inorganic carbides
CA953190A (en) Method of manufacturing single crystals of semiconductor compounds
CA966860A (en) Method of manufacturing hydration-resistant refractories
CA925865A (en) Method for the production of triazolobenzodiazepine derivatives
CA849475A (en) Method of producing crystalline silicon
CA962559A (en) Manufacture of semi-conductor monocrystals
CA908017A (en) Method of manufacturing filamentary silicon carbide crystals
CA846800A (en) Method of manufacturing hydrodimer of acrylonitrile
CA900322A (en) Method of manufacturing silicon carbide crystals
AU452118B2 (en) Method of producing a semiconductor arrangement
AU458918B2 (en) Method of producing a semiconductor arrangement
AU453719B2 (en) Method of producing a semiconductor arrangement
CA839625A (en) Method of producing oriented crystalline plastics
CA839314A (en) Method for the production of bicycloheptanedimethylols
CA927251A (en) Method of fabricating semiconductors
AU2470071A (en) Process for the production of 1-nitroanthraquinones
CA895763A (en) Method of producing crystalline silicon carbide