JPS531204B1 - - Google Patents

Info

Publication number
JPS531204B1
JPS531204B1 JP11885770A JP11885770A JPS531204B1 JP S531204 B1 JPS531204 B1 JP S531204B1 JP 11885770 A JP11885770 A JP 11885770A JP 11885770 A JP11885770 A JP 11885770A JP S531204 B1 JPS531204 B1 JP S531204B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11885770A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS531204B1 publication Critical patent/JPS531204B1/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP11885770A 1970-09-30 1970-12-26 Pending JPS531204B1 (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702048155 DE2048155A1 (de) 1970-09-30 1970-09-30 Anordnung zum Abscheiden von kri stallinem Halbleitermaterial

Publications (1)

Publication Number Publication Date
JPS531204B1 true JPS531204B1 (xx) 1978-01-17

Family

ID=5783855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11885770A Pending JPS531204B1 (xx) 1970-09-30 1970-12-26

Country Status (12)

Country Link
JP (1) JPS531204B1 (xx)
AT (1) AT321992B (xx)
BE (1) BE764761A (xx)
CA (1) CA960551A (xx)
CH (1) CH561081A5 (xx)
CS (1) CS166293B2 (xx)
DE (1) DE2048155A1 (xx)
FR (1) FR2108381A5 (xx)
GB (1) GB1332583A (xx)
NL (1) NL7108122A (xx)
SE (1) SE363978B (xx)
SU (1) SU493954A3 (xx)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5532016B2 (ja) * 2010-06-04 2014-06-25 信越化学工業株式会社 熱処理炉及び熱処理方法

Also Published As

Publication number Publication date
CH561081A5 (xx) 1975-04-30
FR2108381A5 (xx) 1972-05-19
BE764761A (fr) 1971-08-16
SE363978B (xx) 1974-02-11
NL7108122A (xx) 1972-04-05
CS166293B2 (xx) 1976-02-27
CA960551A (en) 1975-01-07
AT321992B (de) 1975-04-25
SU493954A3 (ru) 1975-11-28
DE2048155A1 (de) 1972-04-06
GB1332583A (en) 1973-10-03

Similar Documents

Publication Publication Date Title
AR204384A1 (xx)
ATA96471A (xx)
AU1146470A (xx)
AU1473870A (xx)
AU2044470A (xx)
JPS531204B1 (xx)
AU1326870A (xx)
AU1517670A (xx)
AU1336970A (xx)
AU2017870A (xx)
AU2085370A (xx)
AR195465A1 (xx)
AU1343870A (xx)
AU1328670A (xx)
AU2115870A (xx)
AU2112570A (xx)
AU1581370A (xx)
AU1086670A (xx)
AU1189670A (xx)
AU1974970A (xx)
AU1247570A (xx)
AU1277070A (xx)
AU1235770A (xx)
ATA672271A (xx)
AU1004470A (xx)