CA959791A - Method of manufacturing capacitors in an electronic microstructure - Google Patents
Method of manufacturing capacitors in an electronic microstructureInfo
- Publication number
- CA959791A CA959791A CA142,707A CA142707A CA959791A CA 959791 A CA959791 A CA 959791A CA 142707 A CA142707 A CA 142707A CA 959791 A CA959791 A CA 959791A
- Authority
- CA
- Canada
- Prior art keywords
- manufacturing capacitors
- microstructure
- electronic microstructure
- electronic
- capacitors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6544—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S204/00—Chemistry: electrical and wave energy
- Y10S204/03—Auxiliary internally generated electrical energy
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7118642A FR2138339B1 (enExample) | 1971-05-24 | 1971-05-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA959791A true CA959791A (en) | 1974-12-24 |
Family
ID=9077495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA142,707A Expired CA959791A (en) | 1971-05-24 | 1972-05-23 | Method of manufacturing capacitors in an electronic microstructure |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3839164A (enExample) |
| JP (1) | JPS515279B1 (enExample) |
| AU (1) | AU4256772A (enExample) |
| BE (1) | BE783832A (enExample) |
| CA (1) | CA959791A (enExample) |
| CH (1) | CH542501A (enExample) |
| FR (1) | FR2138339B1 (enExample) |
| GB (1) | GB1387018A (enExample) |
| IT (1) | IT958931B (enExample) |
| NL (1) | NL7206878A (enExample) |
| SE (1) | SE369984B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5010168A (enExample) * | 1973-05-24 | 1975-02-01 | ||
| FR2509516A1 (fr) * | 1981-07-08 | 1983-01-14 | Labo Electronique Physique | Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise |
| DE3137708A1 (de) * | 1981-09-22 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Integratorschaltung mit einem differenzverstaerker |
| DE3214991A1 (de) * | 1982-04-22 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbaustein mit diskretem kondensator |
| FR2526225B1 (fr) * | 1982-04-30 | 1985-11-08 | Radiotechnique Compelec | Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu |
| US6271131B1 (en) | 1998-08-26 | 2001-08-07 | Micron Technology, Inc. | Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers |
| US6284655B1 (en) | 1998-09-03 | 2001-09-04 | Micron Technology, Inc. | Method for producing low carbon/oxygen conductive layers |
| US6323081B1 (en) | 1998-09-03 | 2001-11-27 | Micron Technology, Inc. | Diffusion barrier layers and methods of forming same |
| US6239028B1 (en) | 1998-09-03 | 2001-05-29 | Micron Technology, Inc. | Methods for forming iridium-containing films on substrates |
| US6329286B1 (en) | 1999-04-27 | 2001-12-11 | Micron Technology, Inc. | Methods for forming conformal iridium layers on substrates |
| US6660631B1 (en) * | 2000-08-31 | 2003-12-09 | Micron Technology, Inc. | Devices containing platinum-iridium films and methods of preparing such films and devices |
| KR100849854B1 (ko) * | 2007-02-23 | 2008-08-01 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2640806A (en) * | 1949-06-27 | 1953-06-02 | Kaiser Aluminium Chem Corp | Process for polishing aluminum |
| US2853445A (en) * | 1956-04-06 | 1958-09-23 | Aerovox Corp | Process of etching aluminum foil for electrolytic capacitor |
| US3389060A (en) * | 1964-06-15 | 1968-06-18 | Gen Motors Corp | Method of indium coating metallic articles |
| US3423821A (en) * | 1965-03-18 | 1969-01-28 | Hitachi Ltd | Method of producing thin film integrated circuits |
| US3466719A (en) * | 1967-01-11 | 1969-09-16 | Texas Instruments Inc | Method of fabricating thin film capacitors |
-
1971
- 1971-05-24 FR FR7118642A patent/FR2138339B1/fr not_active Expired
-
1972
- 1972-05-20 IT IT68609/72A patent/IT958931B/it active
- 1972-05-20 NL NL7206878A patent/NL7206878A/xx unknown
- 1972-05-22 GB GB2389072A patent/GB1387018A/en not_active Expired
- 1972-05-22 US US00255799A patent/US3839164A/en not_active Expired - Lifetime
- 1972-05-23 SE SE06696/72A patent/SE369984B/xx unknown
- 1972-05-23 BE BE783832A patent/BE783832A/nl unknown
- 1972-05-23 CA CA142,707A patent/CA959791A/en not_active Expired
- 1972-05-23 CH CH755172A patent/CH542501A/de not_active IP Right Cessation
- 1972-05-23 AU AU42567/72A patent/AU4256772A/en not_active Expired
- 1972-05-24 JP JP47051592A patent/JPS515279B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE369984B (enExample) | 1974-09-23 |
| NL7206878A (enExample) | 1972-11-28 |
| GB1387018A (en) | 1975-03-12 |
| DE2225163A1 (de) | 1972-12-07 |
| FR2138339B1 (enExample) | 1974-08-19 |
| JPS515279B1 (enExample) | 1976-02-18 |
| AU4256772A (en) | 1973-11-29 |
| IT958931B (it) | 1973-10-30 |
| DE2225163B2 (de) | 1976-11-25 |
| FR2138339A1 (enExample) | 1973-01-05 |
| CH542501A (de) | 1973-09-30 |
| US3839164A (en) | 1974-10-01 |
| BE783832A (nl) | 1972-11-23 |
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