CA956550A - Production method for polycrystalline semiconductor bodies - Google Patents

Production method for polycrystalline semiconductor bodies

Info

Publication number
CA956550A
CA956550A CA123,097A CA123097A CA956550A CA 956550 A CA956550 A CA 956550A CA 123097 A CA123097 A CA 123097A CA 956550 A CA956550 A CA 956550A
Authority
CA
Canada
Prior art keywords
production method
polycrystalline semiconductor
semiconductor bodies
bodies
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA123,097A
Other languages
English (en)
Other versions
CA123097S (en
Inventor
Lloyd M. Woerner
Cedric G. Currin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of CA956550A publication Critical patent/CA956550A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
CA123,097A 1970-12-07 1971-09-17 Production method for polycrystalline semiconductor bodies Expired CA956550A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US095732A US3862020A (en) 1970-12-07 1970-12-07 Production method for polycrystalline semiconductor bodies

Publications (1)

Publication Number Publication Date
CA956550A true CA956550A (en) 1974-10-22

Family

ID=22253343

Family Applications (1)

Application Number Title Priority Date Filing Date
CA123,097A Expired CA956550A (en) 1970-12-07 1971-09-17 Production method for polycrystalline semiconductor bodies

Country Status (8)

Country Link
US (1) US3862020A (OSRAM)
JP (1) JPS5239764B1 (OSRAM)
BE (1) BE776300A (OSRAM)
CA (1) CA956550A (OSRAM)
DE (1) DE2160670C3 (OSRAM)
FR (1) FR2117439A5 (OSRAM)
GB (1) GB1364099A (OSRAM)
NL (1) NL7116706A (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961003A (en) * 1972-05-17 1976-06-01 Dow Corning Corporation Method and apparatus for making elongated Si and SiC structures
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4123989A (en) * 1977-09-12 1978-11-07 Mobil Tyco Solar Energy Corp. Manufacture of silicon on the inside of a tube
JPS57186410A (en) * 1981-12-22 1982-11-16 Yanmar Agricult Equip Riding type self-detaching combine
US4715875A (en) * 1984-11-13 1987-12-29 Ispra Fibroptics Industries Herzlia Ltd. Manufacture of optical fibre preforms
US4996082A (en) * 1985-04-26 1991-02-26 Wisconsin Alumni Research Foundation Sealed cavity semiconductor pressure transducers and method of producing the same
NO995507D0 (no) * 1999-11-11 1999-11-11 Solar Silicon As Fremgangsmåte og anordning for fremstilling av silisium av fotovoltaisk kvalitet
US8961688B2 (en) * 2002-05-24 2015-02-24 Khs Corpoplast Gmbh Method and device for plasma treating workpieces
US7935327B2 (en) * 2006-08-30 2011-05-03 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor integrated into a siemens-type process

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1025845B (de) * 1955-07-29 1958-03-13 Wacker Chemie Gmbh Verfahren zur Herstellung von reinstem Silicium
US3011877A (en) * 1956-06-25 1961-12-05 Siemens Ag Production of high-purity semiconductor materials for electrical purposes
US2989421A (en) * 1957-06-18 1961-06-20 Union Carbide Corp Gas plating of inert compounds on quartz crucibles
NL101577C (OSRAM) * 1957-12-31 1900-01-01
US2967115A (en) * 1958-07-25 1961-01-03 Gen Electric Method of depositing silicon on a silica coated substrate
NL260072A (OSRAM) * 1960-01-15
US3410746A (en) * 1964-03-12 1968-11-12 Space Age Materials Corp Grain-oriented pyrolytic graphite forms and method of making same
BE666629A (OSRAM) * 1964-08-04
US3436255A (en) * 1965-07-06 1969-04-01 Monsanto Co Electric resistance heaters
US3523035A (en) * 1966-12-21 1970-08-04 Texas Instruments Inc Internally coated gun barrels

Also Published As

Publication number Publication date
DE2160670A1 (de) 1972-06-22
DE2160670B2 (de) 1975-04-03
JPS5239764B1 (OSRAM) 1977-10-07
BE776300A (fr) 1972-06-06
DE2160670C3 (de) 1975-11-13
US3862020A (en) 1975-01-21
GB1364099A (en) 1974-08-21
NL7116706A (OSRAM) 1972-06-09
FR2117439A5 (OSRAM) 1972-07-21

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