CA954637A - Method for making high-gain transistors - Google Patents

Method for making high-gain transistors

Info

Publication number
CA954637A
CA954637A CA134,055A CA134055A CA954637A CA 954637 A CA954637 A CA 954637A CA 134055 A CA134055 A CA 134055A CA 954637 A CA954637 A CA 954637A
Authority
CA
Canada
Prior art keywords
making high
gain transistors
transistors
gain
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA134,055A
Other languages
English (en)
Other versions
CA134055S (en
Inventor
William E. Beadle
Milton L. Embree
Larry G. Mcafee
Stanley F. Moyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA954637A publication Critical patent/CA954637A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/087—I2L integrated injection logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
CA134,055A 1971-08-02 1972-02-07 Method for making high-gain transistors Expired CA954637A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00168034A US3817794A (en) 1971-08-02 1971-08-02 Method for making high-gain transistors

Publications (1)

Publication Number Publication Date
CA954637A true CA954637A (en) 1974-09-10

Family

ID=22609812

Family Applications (1)

Application Number Title Priority Date Filing Date
CA134,055A Expired CA954637A (en) 1971-08-02 1972-02-07 Method for making high-gain transistors

Country Status (10)

Country Link
US (1) US3817794A (zh)
JP (1) JPS5145944B2 (zh)
BE (1) BE786889A (zh)
CA (1) CA954637A (zh)
DE (1) DE2236897A1 (zh)
FR (1) FR2148175B1 (zh)
GB (1) GB1340306A (zh)
IT (1) IT961727B (zh)
NL (1) NL160433C (zh)
SE (1) SE374457B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147762B1 (zh) * 1974-02-04 1976-12-16
JPS5148978A (ja) * 1974-10-24 1976-04-27 Nippon Electric Co Handotaisochinoseizohoho
JPS5180786A (zh) * 1975-01-10 1976-07-14 Nippon Electric Co
DE2532608C2 (de) * 1975-07-22 1982-09-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Planardiffusionsverfahren zum Herstellen einer monolithisch integrierten Schaltung
US4026740A (en) * 1975-10-29 1977-05-31 Intel Corporation Process for fabricating narrow polycrystalline silicon members
DE3020609C2 (de) * 1979-05-31 1985-11-07 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element
US4298402A (en) * 1980-02-04 1981-11-03 Fairchild Camera & Instrument Corp. Method of fabricating self-aligned lateral bipolar transistor utilizing special masking techniques
DE3317437A1 (de) * 1983-05-13 1984-11-15 Deutsche Itt Industries Gmbh, 7800 Freiburg Planartransistor mit niedrigem rauschfaktor und verfahren zu dessen herstellung
GB2188479B (en) * 1986-03-26 1990-05-23 Stc Plc Semiconductor devices
JPH02230742A (ja) * 1989-03-03 1990-09-13 Matsushita Electron Corp 半導体装置
US5138413A (en) * 1990-10-22 1992-08-11 Harris Corporation Piso electrostatic discharge protection device

Also Published As

Publication number Publication date
FR2148175A1 (zh) 1973-03-11
JPS5145944B2 (zh) 1976-12-06
DE2236897B2 (zh) 1975-09-04
GB1340306A (en) 1973-12-12
NL7210358A (zh) 1973-02-06
US3817794A (en) 1974-06-18
BE786889A (fr) 1972-11-16
IT961727B (it) 1973-12-10
JPS4825483A (zh) 1973-04-03
NL160433C (nl) 1979-10-15
SE374457B (zh) 1975-03-03
NL160433B (nl) 1979-05-15
DE2236897A1 (de) 1973-02-15
FR2148175B1 (zh) 1977-08-26

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