CA938736A - Field-effect semiconductor device - Google Patents

Field-effect semiconductor device

Info

Publication number
CA938736A
CA938736A CA128563A CA128563A CA938736A CA 938736 A CA938736 A CA 938736A CA 128563 A CA128563 A CA 128563A CA 128563 A CA128563 A CA 128563A CA 938736 A CA938736 A CA 938736A
Authority
CA
Canada
Prior art keywords
field
semiconductor device
effect semiconductor
effect
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA128563A
Other languages
English (en)
Other versions
CA128563S (en
Inventor
Yamashita Akio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Akio Yamashita
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP10428570A external-priority patent/JPS527716B1/ja
Priority claimed from JP45106523A external-priority patent/JPS527717B1/ja
Application filed by Akio Yamashita, Matsushita Electric Industrial Co Ltd filed Critical Akio Yamashita
Application granted granted Critical
Publication of CA938736A publication Critical patent/CA938736A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Thyristors (AREA)
CA128563A 1970-11-26 1971-11-25 Field-effect semiconductor device Expired CA938736A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10428570A JPS527716B1 (xx) 1970-11-26 1970-11-26
JP45106523A JPS527717B1 (xx) 1970-11-30 1970-11-30

Publications (1)

Publication Number Publication Date
CA938736A true CA938736A (en) 1973-12-18

Family

ID=26444792

Family Applications (1)

Application Number Title Priority Date Filing Date
CA128563A Expired CA938736A (en) 1970-11-26 1971-11-25 Field-effect semiconductor device

Country Status (7)

Country Link
US (1) US3742318A (xx)
AU (1) AU446887B2 (xx)
CA (1) CA938736A (xx)
DE (1) DE2158270C3 (xx)
FR (1) FR2115412B1 (xx)
GB (1) GB1377996A (xx)
NL (1) NL7116235A (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US3916428A (en) * 1973-05-19 1975-10-28 Matsushita Electric Ind Co Ltd Semiconductor magneto-resistance element
JPS6036708B2 (ja) * 1978-02-24 1985-08-22 株式会社日立製作所 電界効果形サイリスタのゲ−ト回路
JPS5936832B2 (ja) * 1978-03-14 1984-09-06 株式会社日立製作所 半導体スイッチング素子
DE2922250A1 (de) * 1979-05-31 1980-12-11 Siemens Ag Lichtsteuerbarer transistor
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
FR2774511B1 (fr) * 1998-01-30 2002-10-11 Commissariat Energie Atomique Substrat compliant en particulier pour un depot par hetero-epitaxie

Also Published As

Publication number Publication date
AU446887B2 (en) 1974-04-04
US3742318A (en) 1973-06-26
DE2158270B2 (de) 1977-12-08
AU3610671A (en) 1973-05-31
GB1377996A (en) 1974-12-18
FR2115412B1 (xx) 1976-09-03
FR2115412A1 (xx) 1972-07-07
DE2158270A1 (de) 1972-06-29
NL7116235A (xx) 1972-05-30
DE2158270C3 (de) 1978-08-03

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