CA938383A - Semiconductor devices having a low minority carrier lifetime and process for producing same - Google Patents

Semiconductor devices having a low minority carrier lifetime and process for producing same

Info

Publication number
CA938383A
CA938383A CA128221A CA128221A CA938383A CA 938383 A CA938383 A CA 938383A CA 128221 A CA128221 A CA 128221A CA 128221 A CA128221 A CA 128221A CA 938383 A CA938383 A CA 938383A
Authority
CA
Canada
Prior art keywords
semiconductor devices
minority carrier
producing same
carrier lifetime
low minority
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA128221A
Other languages
English (en)
Other versions
CA128221S (en
Inventor
F. Stahr Donald
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FMC Corp
Original Assignee
FMC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FMC Corp filed Critical FMC Corp
Application granted granted Critical
Publication of CA938383A publication Critical patent/CA938383A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
CA128221A 1970-12-10 1971-11-22 Semiconductor devices having a low minority carrier lifetime and process for producing same Expired CA938383A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9680170A 1970-12-10 1970-12-10

Publications (1)

Publication Number Publication Date
CA938383A true CA938383A (en) 1973-12-11

Family

ID=22259128

Family Applications (1)

Application Number Title Priority Date Filing Date
CA128221A Expired CA938383A (en) 1970-12-10 1971-11-22 Semiconductor devices having a low minority carrier lifetime and process for producing same

Country Status (7)

Country Link
US (1) US3662232A (enExample)
JP (1) JPS505023B1 (enExample)
CA (1) CA938383A (enExample)
DE (1) DE2143777C3 (enExample)
FR (1) FR2117861B1 (enExample)
GB (1) GB1368119A (enExample)
SE (1) SE378477B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
US3975756A (en) * 1974-06-28 1976-08-17 The United States Of America As Represented By The Secretary Of The Army Gadolinium doped germanium
US4464648A (en) * 1981-07-20 1984-08-07 Delta Airlines, Inc. Display panel for aircraft parking
US5384477A (en) * 1993-03-09 1995-01-24 National Semiconductor Corporation CMOS latchup suppression by localized minority carrier lifetime reduction
US5418127A (en) * 1993-05-28 1995-05-23 Eastman Kodak Company Water-soluble disulfides in silver halide emulsions

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301451A (enExample) * 1962-12-17
US3340108A (en) * 1963-07-09 1967-09-05 Semi Elements Inc Laser materials
US3311510A (en) * 1964-03-16 1967-03-28 Mandelkorn Joseph Method of making a silicon semiconductor device
DE1439347A1 (de) * 1964-03-18 1968-11-07 Siemens Ag Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ
US3502515A (en) * 1964-09-28 1970-03-24 Philco Ford Corp Method of fabricating semiconductor device which includes region in which minority carriers have short lifetime
US3461356A (en) * 1965-08-19 1969-08-12 Matsushita Electric Industrial Co Ltd Negative resistance semiconductor device having an intrinsic region
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3485684A (en) * 1967-03-30 1969-12-23 Trw Semiconductors Inc Dislocation enhancement control of silicon by introduction of large diameter atomic metals
US3486950A (en) * 1967-04-26 1969-12-30 Motorola Inc Localized control of carrier lifetimes in p-n junction devices and integrated circuits

Also Published As

Publication number Publication date
SE378477B (enExample) 1975-09-01
US3662232A (en) 1972-05-09
JPS505023B1 (enExample) 1975-02-27
DE2143777A1 (de) 1972-07-06
DE2143777B2 (de) 1973-04-05
GB1368119A (en) 1974-09-25
FR2117861A1 (enExample) 1972-07-28
FR2117861B1 (enExample) 1977-04-22
DE2143777C3 (de) 1973-10-25

Similar Documents

Publication Publication Date Title
CA922817A (en) High frequency semiconductor device
GB1345527A (en) Process for producing semiconductor devices
CA933676A (en) Method of manufacturing a semiconductor device
AU455243B1 (en) Method of manufacturing a semiconductor device
AU459215B2 (en) Semiconductor devices having alow minority carrier lifetime and process for producing same
CA932880A (en) Method of producing a plurality of semiconductor components
AU452890B2 (en) Circuit for producing a carrier
AU3609971A (en) Semiconductor devices having alow minority carrier lifetime and process for producing same
CA970073A (en) Semiconductor wafer
CA918304A (en) Method of manufacturing a semiconductor device
CA927525A (en) Machine and process for semiconductor device assembly
AU459262B2 (en) Method of manufacturing a semiconductor device
AU456634B2 (en) A method of manufacturing semiconductor devices
CA933677A (en) Method of manufacturing a semiconductor device
AU452118B2 (en) Method of producing a semiconductor arrangement
AU473802B2 (en) Method of manufacturing a semiconductor device and semiconductor device manufactured according tothe method
AU465089B2 (en) Method for activating a semiconductor electron emitter
CA833197A (en) Method of simultaneously producing a multiplicity of semiconductor devices
CA858502A (en) Method of manufacturing semiconductor devices
CA838347A (en) Method of manufacturing semiconductor devices
CA918302A (en) Method of manufacturing a semiconductor device
CA928870A (en) Method of manufacturing a semiconductor device
CA845884A (en) Semiconductor device and a method of manufacturing the same
AU2842071A (en) A method of manufacturing semiconductor devices
CA922819A (en) Method of producing a semiconductor component