SE378477B - - Google Patents

Info

Publication number
SE378477B
SE378477B SE7109328A SE932871A SE378477B SE 378477 B SE378477 B SE 378477B SE 7109328 A SE7109328 A SE 7109328A SE 932871 A SE932871 A SE 932871A SE 378477 B SE378477 B SE 378477B
Authority
SE
Sweden
Application number
SE7109328A
Inventor
D F Stahr
Original Assignee
Fmc Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fmc Corp filed Critical Fmc Corp
Publication of SE378477B publication Critical patent/SE378477B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/904—Charge carrier lifetime control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
SE7109328A 1970-12-10 1971-07-20 SE378477B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9680170A 1970-12-10 1970-12-10

Publications (1)

Publication Number Publication Date
SE378477B true SE378477B (xx) 1975-09-01

Family

ID=22259128

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7109328A SE378477B (xx) 1970-12-10 1971-07-20

Country Status (7)

Country Link
US (1) US3662232A (xx)
JP (1) JPS505023B1 (xx)
CA (1) CA938383A (xx)
DE (1) DE2143777C3 (xx)
FR (1) FR2117861B1 (xx)
GB (1) GB1368119A (xx)
SE (1) SE378477B (xx)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
US3975756A (en) * 1974-06-28 1976-08-17 The United States Of America As Represented By The Secretary Of The Army Gadolinium doped germanium
US4464648A (en) * 1981-07-20 1984-08-07 Delta Airlines, Inc. Display panel for aircraft parking
US5384477A (en) * 1993-03-09 1995-01-24 National Semiconductor Corporation CMOS latchup suppression by localized minority carrier lifetime reduction
US5418127A (en) * 1993-05-28 1995-05-23 Eastman Kodak Company Water-soluble disulfides in silver halide emulsions

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1252809B (de) * 1962-12-17 1967-10-26 Tektronix, Inc., Beaverton, Oreg. (V. St. A.) Halbleiterdiode mit einem einkristallinen Halbleiterkörper und mit Rekombinationszentren in der n- und in der p-Zone und Verfahren zum Herstellen
US3340108A (en) * 1963-07-09 1967-09-05 Semi Elements Inc Laser materials
US3311510A (en) * 1964-03-16 1967-03-28 Mandelkorn Joseph Method of making a silicon semiconductor device
DE1439347A1 (de) * 1964-03-18 1968-11-07 Siemens Ag Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ
US3502515A (en) * 1964-09-28 1970-03-24 Philco Ford Corp Method of fabricating semiconductor device which includes region in which minority carriers have short lifetime
US3461356A (en) * 1965-08-19 1969-08-12 Matsushita Electric Ind Co Ltd Negative resistance semiconductor device having an intrinsic region
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3485684A (en) * 1967-03-30 1969-12-23 Trw Semiconductors Inc Dislocation enhancement control of silicon by introduction of large diameter atomic metals
US3486950A (en) * 1967-04-26 1969-12-30 Motorola Inc Localized control of carrier lifetimes in p-n junction devices and integrated circuits

Also Published As

Publication number Publication date
FR2117861B1 (xx) 1977-04-22
JPS505023B1 (xx) 1975-02-27
FR2117861A1 (xx) 1972-07-28
DE2143777C3 (de) 1973-10-25
US3662232A (en) 1972-05-09
DE2143777B2 (de) 1973-04-05
GB1368119A (en) 1974-09-25
DE2143777A1 (de) 1972-07-06
CA938383A (en) 1973-12-11

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