CA923636A - Method of producing thin film transistors - Google Patents

Method of producing thin film transistors

Info

Publication number
CA923636A
CA923636A CA106851A CA106851A CA923636A CA 923636 A CA923636 A CA 923636A CA 106851 A CA106851 A CA 106851A CA 106851 A CA106851 A CA 106851A CA 923636 A CA923636 A CA 923636A
Authority
CA
Canada
Prior art keywords
thin film
film transistors
producing thin
producing
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA106851A
Other languages
English (en)
Other versions
CA106851S (en
Inventor
J. Page Derrick
C. Driver Michael
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA923636A publication Critical patent/CA923636A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
CA106851A 1970-03-06 1971-03-04 Method of producing thin film transistors Expired CA923636A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1719770A 1970-03-06 1970-03-06

Publications (1)

Publication Number Publication Date
CA923636A true CA923636A (en) 1973-03-27

Family

ID=21781266

Family Applications (1)

Application Number Title Priority Date Filing Date
CA106851A Expired CA923636A (en) 1970-03-06 1971-03-04 Method of producing thin film transistors

Country Status (5)

Country Link
US (1) US3669661A (de)
CA (1) CA923636A (de)
DE (1) DE2110543A1 (de)
FR (1) FR2081751B1 (de)
GB (1) GB1350782A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3775120A (en) * 1971-04-02 1973-11-27 Motorola Inc Vertical resistor
US4115120A (en) * 1977-09-29 1978-09-19 International Business Machines Corporation Method of forming thin film patterns by differential pre-baking of resist
US4204009A (en) * 1977-12-30 1980-05-20 International Business Machines Corporation Two layer resist system
US4180604A (en) * 1977-12-30 1979-12-25 International Business Machines Corporation Two layer resist system
US4238559A (en) * 1978-08-24 1980-12-09 International Business Machines Corporation Two layer resist system
US4371423A (en) * 1979-09-04 1983-02-01 Vlsi Technology Research Association Method of manufacturing semiconductor device utilizing a lift-off technique
US4389481A (en) * 1980-06-02 1983-06-21 Xerox Corporation Method of making planar thin film transistors, transistor arrays
US4335161A (en) * 1980-11-03 1982-06-15 Xerox Corporation Thin film transistors, thin film transistor arrays, and a process for preparing the same
US4331758A (en) * 1980-11-03 1982-05-25 Xerox Corporation Process for the preparation of large area TFT arrays
US4387145A (en) * 1981-09-28 1983-06-07 Fairchild Camera & Instrument Corp. Lift-off shadow mask
US4404731A (en) * 1981-10-01 1983-09-20 Xerox Corporation Method of forming a thin film transistor
US4620208A (en) * 1983-11-08 1986-10-28 Energy Conversion Devices, Inc. High performance, small area thin film transistor
US4547789A (en) * 1983-11-08 1985-10-15 Energy Conversion Devices, Inc. High current thin film transistor
US4543320A (en) * 1983-11-08 1985-09-24 Energy Conversion Devices, Inc. Method of making a high performance, small area thin film transistor
US4633284A (en) * 1983-11-08 1986-12-30 Energy Conversion Devices, Inc. Thin film transistor having an annealed gate oxide and method of making same
US4654295A (en) * 1983-12-05 1987-03-31 Energy Conversion Devices, Inc. Method of making short channel thin film field effect transistor
IT1190294B (it) * 1986-02-13 1988-02-16 Selenia Ind Elettroniche Una struttura di fotopolimero a multistrati (mlr) per la fabbricazione di dispositivi mesfet con gate submicrometrico e con canale incassato (recesse) di lunghezza variabile
US7867627B2 (en) * 2004-12-13 2011-01-11 Silcotek Corporation Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures

Also Published As

Publication number Publication date
US3669661A (en) 1972-06-13
DE2110543A1 (de) 1972-11-02
GB1350782A (en) 1974-04-24
FR2081751A1 (de) 1971-12-10
FR2081751B1 (de) 1976-06-11

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